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MBRF5200D0G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

器件类别：分立半导体    二极管   

厂商名称：Taiwan Semiconductor

厂商官网：http://www.taiwansemi.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
包装说明
R-PSFM-T2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW POWER LOSS
应用
EFFICIENCY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.02 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
120 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
200 V
最大反向电流
100 µA
表面贴装
NO
技术
SCHOTTKY
端子形式
THROUGH-HOLE
端子位置
SINGLE
Base Number Matches
1
文档预览
CREAT BY ART
MBRF5100 - MBRF5200
5.0AMPS Isolated Schottky Barrier Rectifiers
ITO-220AC
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.61 grams
Ordering Information(example)
Part No.
Package
Packing
Packing
code
D0
Green Compound
Packing code
D0G
MBRF5100 ITO-220AC 50 / TUBE
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Surge Current
(Rated V
R
, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, T
A
=25℃
IF=5A, T
A
=125℃
Maximum Reverse Current @ Rated V
R
Voltage Rate of Change,(Rated V
R
)
Typical Junction capacitance
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
T
A
=25
℃
T
A
=125
℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
V
F
MBRF
5100
100
70
100
MBRF
5150
150
105
150
5
10
120
0.5
MBRF
5200
200
140
200
Unit
V
V
V
A
A
A
A
0.90
0.80
0.1
5
10000
310
3
1.02
0.92
V
I
R
dV/dt
Cj
R
θjC
T
J
T
STG
mA
V/us
pF
O
C/W
O
O
- 65 to + 150
- 65 to + 175
C
C
Version:D12
RATINGS AND CHARACTERISTIC CURVES (MBRF5100 THRU MBRF5200)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
6
180
150
120
90
60
30
0
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT
(A)
5
4
3
2
1
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
10
NUMBER OF CYCLES AT 60 Hz
100
CASE TEMPERATURE
(
o
C)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TA=25℃
INSTANTANEOUS FORWARD CURRENT
(A)
INSTANTANEOUS REVERSE CURRENT
(mA)
1
10
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TA=125℃
0.1
TA=75℃
0.01
1
MBRF5100
MBRF5150 - 5200
0.1
PULSE WIDTH=300uS
1% DUTY CYCLE
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
1.1 1.2
0.001
TA=25℃
0.01
0.0001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
(%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
TRANSIENT THERMAL IMPEDANCE
(℃/W)
JUNCTION CAPACITANCE (pF)
A
TA=25℃
f=1.0MHz
Vsig=50mVp-p
1000
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
10
100
1
10
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Version:D12
Ordering information
Part No.
MBRF5xxx
Package
ITO-220AC
ITO-220AC
BULK Packing
50 / TUBE
50 / TUBE
Packing
code
C0
D0
Green Compound
Packing code
C0G
D0G
Note: "xxx" is Device Code from "100" thru "200".
Dimensions
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Unit(mm)
Min
4.30
2.50
2.30
0.46
6.30
9.60
3.00
-
0.95
0.50
2.40
14.80
-
-
12.60
4.95
Max
4.70
3.10
2.90
0.76
6.90
10.30
3.40
1.60
1.45
0.90
3.20
15.50
4.10
1.80
13.80
5.20
Unit(inch)
Min
0.169
0.098
0.091
0.018
0.248
0.378
0.118
-
0.037
0.020
0.094
0.583
-
-
0.496
0.195
Max
0.185
0.122
0.114
0.030
0.272
0.406
0.134
0.063
0.057
0.035
0.126
0.610
0.161
0.071
0.543
0.205
Marking Diagram
P/N
G
YWW
= Specific Device Code
= Green Compound
= Date Code
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参数对比
与MBRF5200D0G相近的元器件有：MBRF5200D0、MBRF5100D0G、MBRF5100D0、MBRF5150D0G。描述及对比如下：
型号 MBRF5200D0G MBRF5200D0 MBRF5100D0G MBRF5100D0 MBRF5150D0G
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 150V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
包装说明 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
应用 EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.02 V 1.02 V 0.9 V 0.9 V 1.02 V
JEDEC-95代码 TO-220AC TO-220AC TO-220AC TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 120 A 120 A 120 A 120 A 120 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 5 A 5 A 5 A 5 A 5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 200 V 200 V 100 V 100 V 150 V
最大反向电流 100 µA 100 µA 100 µA 100 µA 100 µA
表面贴装 NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
厂商名称 - - Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
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