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MBS8

Bridge Rectifiers 0.8A 800V

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
R-PDSO-G4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
800 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1 V
JESD-30 代码
R-PDSO-G4
湿度敏感等级
1
最大非重复峰值正向电流
35 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
800 V
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
文档预览
MBS2 - MBS10
Taiwan Semiconductor
CREAT BY ART
0.8A, 200V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MBS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
On glass-epoxy P.C.B.
On aluminum substrate
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 0.4 A
Maximum DC reverse current
at rated DC blocking voltage
Rating for fusing (t<8.3ms)
Typical junction capacitance per leg (Note 2)
(Note 3)
Typical thermal resistance (Note 4)
(Note 3)
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Note 3: On glass epoxy P.C.B. mounted on 0.05" x 0.05" (1.3mm x 1.3mm) pads
Note 4: On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20mm x 20mm) mounted on 0.05" x 0.05" (1.3mm x 1.3mm) solder pads
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
MBS2
200
140
200
MBS4
400
280
400
MBS6
600
420
600
0.5
0.8
35
1.0
5
100
5.08
13
20
70
85
- 55 to +150
- 55 to +150
MBS8
800
560
800
MBS10
1000
700
1000
Unit
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJL
R
θJA
R
θJA
T
J
T
STG
A
V
μA
A
2
s
pF
°C/W
°C
°C
Document Number: DS_D1410054
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBSx
(Note 1, 2)
PART NO.
SUFFIX
H
PACKING
CODE
RC
PACKING CODE
SUFFIX
G
MBS
3,000 / 13" Paper reel
PACKAGE
PACKING
Note 1: "x" defines voltage from 200V (MBS2) to 1000V (MBS10)
Note 2: Whole series with green compound
EXAMPLE
PREFERRED
PART NO.
MBS10HRCG
PART NO.
MBS10
PART NO.
SUFFIX
H
PACKING CODE
RC
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
1
INSTANTANEOUS REVERSE CURRENT (μA)
RESISTIVE OR INDUCTIVE LOAD
WITH HEATSINK
100
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
PER LEG
AVERAGE FORWARD CURRENT (A)
0.8
Aluminum Substrate
10
T
J
=125°C
0.6
1
0.4
0.2
Glass Epoxy P.C.B.
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE (
o
C)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
35
10
INSTANTANEOUS FORWARD
A
CURRENT (A)
Single Half Sine-Wave
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
PER LEG
PEAK FORWARD SURGE CURRENT (A)
30
25
20
15
10
5
0
1
10
F=50Hz
F=60Hz
1
100
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1410054
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
30
25
CAPACITANCE (pF)
a
20
15
10
5
0
0.1
1
10
100
REVERSE VOLTAGE (V)
f=1.0MHz
Vslg=50mVp-p
PACKAGE OUTLINE DIMENSIONS
MBS
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
4.50
0.56
3.60
-
2.20
2.30
-
-
0.95
0.70
0.15
1.10
Max
4.90
0.84
5.00
6.90
2.60
2.70
0.20
2.90
1.53
1.10
0.35
2.12
Unit (inch)
Min
0.177
0.022
0.142
-
0.087
0.091
-
-
0.037
0.028
0.006
0.043
Max
0.193
0.033
0.197
0.272
0.102
0.106
0.008
0.114
0.060
0.043
0.014
0.083
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
F
Unit (mm)
1.7
0.9
4.4
8.1
1.3
6.3
Unit (inch)
0.067
0.035
0.173
0.319
0.051
0.248
MARKING DIAGRAM
P/N
YW
F
= Specific Device Code
= Date Code
= Factory Code
Document Number: DS_D1410054
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410054
Version: O15
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参数对比
与MBS8相近的元器件有:MBS4、MBS6、MBS2HRCG、MBS8HRCG、MBS6HRCG、MBS10HRCG。描述及对比如下:
型号 MBS8 MBS4 MBS6 MBS2HRCG MBS8HRCG MBS6HRCG MBS10HRCG
描述 Bridge Rectifiers 0.8A 800V Bridge Rectifiers 0.8A 400V Bridge Rectifiers 0.8A 600V Bridge Rectifiers 0.5A,200V,MINI SMD GP BRIDGE RECTIFIER Bridge Rectifiers 0.5A,800V,MINI SMD GP BRIDGE RECTIFIER Bridge Rectifiers 0.5A,600V,MINI SMD GP BRIDGE RECTIFIER Bridge Rectifiers 0.5A,1000V,MINI SMD GP BRIDGE RECTIFIER
是否Rohs认证 符合 符合 符合 - - 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor - - Taiwan Semiconductor Taiwan Semiconductor
包装说明 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - - - R-PDSO-G4
Reach Compliance Code compliant compliant compliant - - compliant compliant
ECCN代码 EAR99 EAR99 EAR99 - - EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED - - UL RECOGNIZED UL RECOGNIZED
最小击穿电压 800 V 400 V 600 V - - 600 V 1000 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON - - SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - - R-PDSO-G4 R-PDSO-G4
湿度敏感等级 1 1 1 - - 1 1
最大非重复峰值正向电流 35 A 35 A 35 A - - 35 A 35 A
元件数量 4 4 4 - - 4 4
相数 1 1 1 - - 1 1
端子数量 4 4 4 - - 4 4
最高工作温度 150 °C 150 °C 150 °C - - 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C - - -55 °C -55 °C
最大输出电流 0.5 A 0.5 A 0.5 A - - 0.5 A 0.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 800 V 400 V 600 V - - 600 V 1000 V
表面贴装 YES YES YES - - YES YES
端子形式 GULL WING GULL WING GULL WING - - GULL WING GULL WING
端子位置 DUAL DUAL DUAL - - DUAL DUAL
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