首页 > 器件类别 > 模拟混合信号IC > 放大器电路

MC33178DG

DUAL OP-AMP, 4000uV OFFSET-MAX, 5MHz BAND WIDTH, PDSO8, LEAD FREE, SOIC-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:

下载文档
MC33178DG 在线购买

供应商:

器件:MC33178DG

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
符合
厂商名称
Rochester Electronics
零件包装代码
SOIC
包装说明
LEAD FREE, SOIC-8
针数
8
Reach Compliance Code
unknown
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.6 µA
标称共模抑制比
110 dB
最大输入失调电压
4000 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
湿度敏感等级
NOT SPECIFIED
负供电电压上限
-18 V
标称负供电电压 (Vsup)
-15 V
功能数量
2
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
座面最大高度
1.75 mm
标称压摆率
2 V/us
供电电压上限
18 V
标称供电电压 (Vsup)
15 V
表面贴装
YES
技术
BIPOLAR
温度等级
INDUSTRIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称均一增益带宽
5000 kHz
宽度
3.9 mm
文档预览
D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
MC33178, MC33179
Low Power, Low Noise
Operational Amplifiers
The MC33178/9 series is a family of high quality monolithic
amplifiers employing Bipolar technology with innovative high
performance concepts for quality audio and data signal processing
applications. This device family incorporates the use of high
frequency PNP input transistors to produce amplifiers exhibiting low
input offset voltage, noise and distortion. In addition, the amplifier
provides high output current drive capability while consuming only
420
mA
of drain current per amplifier. The NPN output stage used,
exhibits no deadband crossover distortion, large output voltage swing,
excellent phase and gain margins, low open−loop high frequency
output impedance, symmetrical source and sink AC frequency
performance.
The MC33178/9 family offers both dual and quad amplifier
versions in several package options.
Features
http://onsemi.com
DUAL
PDIP−8
P SUFFIX
CASE 626
1
SOIC−8
D SUFFIX
CASE 751
8
8
1
600
W
Output Drive Capability
Large Output Voltage Swing
Low Offset Voltage: 0.15 mV (Mean)
Low T.C. of Input Offset Voltage: 2.0
mV/°C
Low Total Harmonic Distortion: 0.0024%
(@ 1.0 kHz w/600
W
Load)
High Gain Bandwidth: 5.0 MHz
High Slew Rate: 2.0 V/ms
Dual Supply Operation:
±2.0
V to
±18
V
ESD Clamps on the Inputs Increase Ruggedness without Affecting
Device Performance
Pb−Free Packages are Available
8
1
Micro8
DM SUFFIX
CASE 846A
QUAD
PDIP−14
P SUFFIX
CASE 646
1
SOIC−14
D SUFFIX
CASE 751A
14
14
V
CC
1
I
ref
I
ref
V
in
V
in
+
C
C
14
1
TSSOP−14
DTB SUFFIX
CASE 948G
ORDERING INFORMATION
V
O
C
M
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
V
EE
See general marking information in the device marking
section on page 4 of this data sheet.
Figure 1. Representative Schematic Diagram
(Each Amplifier)
©
Semiconductor Components Industries, LLC, 2006
October, 2006
Rev. 7
1
Publication Order Number:
MC33178/D
MC33178, MC33179
MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to V
EE)
Input Differential Voltage Range
Input Voltage Range
Output Short Circuit Duration (Note 2)
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Operating Temperature Range
Symbol
V
S
V
IDR
V
IR
t
SC
T
J
T
stg
P
D
T
A
Value
+36
Note 1
Note 1
Indefinite
+150
−60
to +150
Note 2
−40
to +85
Unit
V
V
V
sec
°C
°C
mW
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Either or both input voltages should not exceed V
CC
or V
EE
.
2. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded. (See power dissipation performance
characteristic, Figure 2.)
ORDERING INFORMATION
Device
MC33178D
MC33178DG
MC33178DR2
MC33178DR2G
MC33178P
MC33178PG
MC33178DMR2
MC33178DMR2G
MC33179D
MC33179DG
MC33179DR2
MC33179DR2G
MC33179P
MC33179PG
MC33179DTBR2G
Package
SOIC−8
SOIC−8
(Pb−Free)
SOIC−8
SOIC−8
(Pb−Free)
PDIP−8
PDIP−8
(Pb−Free)
Micro8
Micro8
(Pb−Free)
SOIC−14
SOIC−14
(Pb−Free)
SOIC−14
SOIC−14
(Pb−Free)
PDIP−14
PDIP−14
(Pb−Free)
TSSOP−14
(Pb−Free)
25 Units / Rail
2500 / Tape & Reel
55 Units / Rail
4000 / Tape & Reel
50 Units / Rail
2500 / Tape & Reel
98 Units / Rail
Shipping
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MC33178, MC33179
MARKING DIAGRAMS
DUAL
PDIP−8
CASE 626
8
MC33178P
AWL
YYWWG
1
1
8
33178
ALYW
G
1
SOIC−8
CASE 751
14
MC33179P
AWLYYWWG
PDIP−14
CASE 646
QUAD
SOIC−14
CASE 751A
14
MC33179DG
AWLYWW
1
Micro8
CASE 846A
8
3178
AYWG
G
1
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G or
G
= Pb−Free Package
(Note: Microdot may be in either location)
TSSOP−14
CASE 948G
14
MC33
179
ALYWG
G
1
PIN CONNECTIONS
DUAL
CASE 626/751/846A
Output 1
Inputs 1
V
EE
1
2
3
4
8
QUAD
CASE 646/751A/948G
Output 1
Inputs 1
V
CC
Inputs 2
Output 2
1
2
3
4
5
6
7
+
2
3
+
+
+
14
13
12
11
10
9
8
+
7
V
CC
Output 2
Inputs 2
Output 4
Inputs 4
V
EE
Inputs 3
Output 3
+
5
6
1
4
(Top View)
(Top View)
http://onsemi.com
3
MC33178, MC33179
DC ELECTRICAL CHARACTERISTICS
(V
CC
= +15 V, V
EE
=
−15
V, T
A
= 25°C, unless otherwise noted.)
Characteristics
Input Offset Voltage (R
S
= 50
W,
V
CM
= 0 V, V
O
= 0 V)
(V
CC
= +2.5 V, V
EE
=
−2.5
V to V
CC
= +15 V, V
EE
=
−15
V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Average Temperature Coefficient of Input Offset Voltage
(R
S
= 50
W,
V
CM
= 0 V, V
O
= 0 V)
T
A
=
−40°
to +85°C
Input Bias Current (V
CM
= 0 V, V
O
= 0 V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Input Offset Current (V
CM
= 0 V, V
O
= 0 V)
T
A
= +25°C
T
A
=
−40°
to +85°C
Common Mode Input Voltage Range
(DV
IO
= 5.0 mV, V
O
= 0 V)
Large Signal Voltage Gain (V
O
=
−10
V to +10 V, R
L
= 600
W)
T
A
= +25°C
T
A
=
−40°
to +85°C
Output Voltage Swing (V
ID
=
±1.0
V)
(V
CC
= +15 V, V
EE
=
−15
V)
R
L
= 300
W
R
L
= 300
W
R
L
= 600
W
R
L
= 600
W
R
L
= 2.0 kW
R
L
= 2.0 kW
(V
CC
= +2.5 V, V
EE
=
−2.5
V)
R
L
= 600
W
R
L
= 600
W
Common Mode Rejection (V
in
=
±13
V)
Power Supply Rejection
V
CC
/V
EE
= +15 V/
−15
V, +5.0 V/
−15
V, +15 V/
−5.0
V
Output Short Circuit Current (V
ID
=
±1.0
V, Output to Ground)
Source (V
CC
= 2.5 V to 15 V)
Sink (V
EE
=
−2.5
V to
−15
V)
Power Supply Current (V
O
= 0 V)
(V
CC
= 2.5 V, V
EE
=
−2.5
V to V
CC
= +15 V, V
EE
=
−15
V)
MC33178 (Dual)
T
A
= +25°C
T
A
=
−40°
to +85°C
MC33179 (Quad)
T
A
= +25°C
T
A
=
−40°
to +85°C
6
7, 8
Figure
3
Symbol
|V
IO
|
3
DV
IO
/DT
4, 5
I
IB
−13
50
25
2.0
100
5.0
−14
+14
200
nA
500
600
nA
50
60
+13
V
V
O
+
V
O
V
O
+
V
O
V
O
+
V
O
V
O
+
V
O
12
13
14, 15
CMR
PSR
80
I
SC
+50
−50
110
+80
−100
mA
mA
1.7
1.4
1.6
2.4
2.6
+12
+13
1.1
80
+12
−12
+13.6
−13
+14
−13.8
1.6
−1.6
110
−12
−13
−1.1
dB
dB
V
kV/V
0.15
3.0
4.0
mV/°C
Min
Typ
Max
Unit
mV
|I
IO
|
V
ICR
A
VOL
9, 10, 11
16
I
D
http://onsemi.com
4
查看更多>
参数对比
与MC33178DG相近的元器件有:MC33179DR2G、MC33179PG、MC33179DG、MC33179D、MC33178P、MC33178PG、MC33178D、MC33178DR2G。描述及对比如下:
型号 MC33178DG MC33179DR2G MC33179PG MC33179DG MC33179D MC33178P MC33178PG MC33178D MC33178DR2G
描述 DUAL OP-AMP, 4000uV OFFSET-MAX, 5MHz BAND WIDTH, PDSO8, LEAD FREE, SOIC-8 QUAD OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO14, LEAD FREE, SOIC-14 QUAD OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDIP14, LEAD FREE, PLASTIC, DIP-14 QUAD OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO14, LEAD FREE, SOIC-14 QUAD OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO14, SOIC-14 DUAL OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8 DUAL OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDIP8, LEAD FREE, PLASTIC DIP-8 DUAL OP-AMP, 4000uV OFFSET-MAX, 5MHz BAND WIDTH, PDSO8, SOIC-8 DUAL OP-AMP, 4000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO8, LEAD FREE, SOIC-8
是否无铅 含铅 不含铅 不含铅 含铅 不含铅 不含铅 含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 不符合 不符合 符合 不符合 符合
厂商名称 Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
零件包装代码 SOIC SOIC DIP SOIC SOIC DIP DIP SOIC SOIC
包装说明 LEAD FREE, SOIC-8 LEAD FREE, SOIC-14 DIP, LEAD FREE, SOIC-14 SOIC-14 PLASTIC, DIP-8 DIP, SOIC-8 LEAD FREE, SOIC-8
针数 8 14 14 14 14 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.6 µA 0.6 µA 0.6 µA 0.6 µA 0.6 µA 0.6 µA 0.6 µA 0.6 µA 0.6 µA
标称共模抑制比 110 dB 110 dB 110 dB 110 dB 110 dB 110 dB 110 dB 110 dB 110 dB
最大输入失调电压 4000 µV 4000 µV 4000 µV 4000 µV 4000 µV 4000 µV 4000 µV 4000 µV 4000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G14 R-PDIP-T14 R-PDSO-G14 R-PDSO-G14 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3 e3 e3 e0 e0 e3 e0 e3
长度 4.9 mm 8.65 mm 18.86 mm 8.65 mm 8.65 mm 9.78 mm 9.78 mm 4.9 mm 4.9 mm
负供电电压上限 -18 V -18 V -18 V -18 V -18 V -18 V -18 V -18 V -18 V
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V -15 V -15 V -15 V -15 V -15 V
功能数量 2 4 4 4 4 2 2 2 2
端子数量 8 14 14 14 14 8 8 8 8
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP DIP SOP SOP DIP DIP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260 240 240 260 240 260
座面最大高度 1.75 mm 1.75 mm 4.69 mm 1.75 mm 1.75 mm 4.45 mm 4.45 mm 1.75 mm 1.75 mm
标称压摆率 2 V/us 2 V/us 2 V/us 2 V/us 2 V/us 2 V/us 2 V/us 2 V/us 2 V/us
供电电压上限 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V 15 V
表面贴装 YES YES NO YES YES NO NO YES YES
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN TIN LEAD TIN LEAD MATTE TIN TIN LEAD MATTE TIN
端子形式 GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40 30 30 40 30 40
标称均一增益带宽 5000 kHz 3000 kHz 3000 kHz 3000 kHz 3000 kHz 3000 kHz 3000 kHz 5000 kHz 3000 kHz
宽度 3.9 mm 3.9 mm 7.62 mm 3.9 mm 3.9 mm 7.62 mm 7.62 mm 3.9 mm 3.9 mm
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消