LESHAN RADIO COMPANY, LTD.
2–Input NAND Gate with
Open Drain Output
MC74VHC1G03
The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate
CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching
level. This allows the MC74VHC1G03 to be used to interface 5 V circuits to circuits of any voltage between V
CC
and 7 V using an external
resistor and power supply.
The MC74VHC1G03 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
• High Speed: t
PD
= 3.6 ns (Typ) at V
CC
= 5 V
• Low Internal Power Dissipation: I
CC
= 2 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 62; Equivalent Gates = 16
MARKING DIAGRAMS
5
4
1
2
3
VP
d
SC–88A / SOT–353/SC–70
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
4
Figure 1. Pinout
(Top View)
1
2
3
VP
d
Figure 2. Logic Symbol
Pin 1
d = Date Code
TSOP–5/SOT–23/SC–59
DT SUFFIX
CASE 483
FUNCTION TABLE
PIN ASSIGNMENT
1
2
3
4
5
IN B
IN A
GND
OUT Y
V
CC
A
L
L
H
H
Inputs
B
L
H
L
H
Output
Y
Z
L
L
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH3–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G03
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T
stg
V
ESD
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power dissipation in still air
Thermal resistance
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
CC
=0
High or Low State
V
OUT
< GND; V
OUT
> V
CC
Value
– 0.5 to + 7.0
– 0.5 to 7.0
– 0.5 to 7.0
–0.5 to V
cc
+ 0.5
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
>2000
> 200
N/A
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
SC–88A, TSOP–5
SC–88A, TSOP–5
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
,t
f
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
Min
2.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
7.0
+ 125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Temperature °C
80
90
100
110
120
130
140
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
Junction
Time,
Time,
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH3–2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G03
DC ELECTRICAL CHARACTERISTICS
V
Symbol
V
IH
Parameter
Minimum High–Level
Input Voltage
Test Conditions
CC
T
A
= 25°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±
0.1
2.0
0.25
T
A
<
85°C
–55°C<T
A
<125°C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±
1.0
20
2.5
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
Typ
Max
Max
Min
1.5
2.1
3.15
3.85
Max
Unit
V
V
IL
Maximum Low–Level
Input Voltage
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±
1.0
40
5.0
V
V
OH
Minimum High–Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= – 50
µA
V
IN
= V
IH
or V
IL
I
OH
= –4 mA
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to5.5
5.5
0
2.0
3.0
4.0
V
V
OL
Maximum Low–Level
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= –8 mA
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
V
I
IN
I
CC
I
OPD
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
Maximum Off–state
Leakage Current
I
OL
= 8 mA
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
V
OUT
= 5.5 V
µA
µA
µA
AC ELECTRICAL CHARACTERISTICS
C
load
= 50 pF, Input t
r
= t
f
= 3.0 ns
T
A
= 25°C
Symbol
t
PZL
T
A
<
85°C –55°C to 125°C
Max
7.9
11.4
5.5
7.5
11.4
7.5
10
Parameter
Maximum Output
Enable Time,
Input A or B to Y
Test Conditions
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
R
L
= R
I
= 500
Ω
C
L
= 50 pF
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
Min
Typ
5.6
8.1
3.6
5.1
8.1
5.1
4
Min
Max
9.5
13.0
6.5
8.5
13.0
8.5
10
Min
Max Unit
11.0
15.5
8.0
10.0
15.5
10.0
10
pF
ns
ns
t
PLZ
Maximum Output
Disable Time
R
L
= R
I
= 500
Ω
C
L
= 50 pF
V
CC
= 3.3 ± 0.3 V C
L
= 50 pF
R
L
= R
I
= 500
Ω
V
CC
= 5.0 ± 0.5 V C
L
= 50 pF
R
L
= R
I
= 500
Ω
C
IN
Maximum Input
Capacitance
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6)
18
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR)
= C
PD
x
V
CC
x
f
in
+ I
CC
.
C
PD
is used to determine the no–
load dynamic power consumption; P
D
= C
PD
x
V
CC 2
x
f
in
+ I
CC
x
V
CC
.
VH3–3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G03
Figure 4. Output Voltage Mismatch Application
Figure 5. Switching Waveforms
C
L
= 50 pF equivalent (Includes jig and probe capacitance)
R
L
= R
1
= 500
Ω
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
Ω)
Figure 6. Test Circuit
Figure 7. Complex Boolean Functions
3
Figure 8. LED Driver
Figure 9. GTL Driver
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
MC74VHC1G03DFT1
MC74VHC1G03DFT2
MC74VHC1G03DFT4
MC74VHC1G03DTT1
MC74VHC1G03DTT3
Logic
Circuit
Indicator
MC
MC
MC
MC
MC
Temp
Range
Identifier
74
74
74
74
74
Technology
VHC1G
VHC1G
VHC1G
VHC1G
VHC1G
Device
Function
03
03
03
03
03
Package Type
Package Tape and
(Name/SOT#/
Suffix
Reel Suffix
Common Name)
DF
DF
DF
DT
DT
T1
T2
T4
T1
T3
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
SOT–23/TSOPS/
SC–59
Tape and
Reel Size
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
178 mm (7 in)
3000 Unit
330 mm (13 in)
10,000 Unit
VH3–4/4
模拟电子
