MCC 72
MCD 72
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2x180 A
I
TAVM
= 2x115 A
V
RRM
= 800-1800 V
TO-240 AA
2
1
3
6
7
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
Version
MCC 72-08
MCC 72-12
MCC 72-14
MCC 72-16
MCC 72-18
1B
8B
Version
MCD 72-08
MCD 72-12
MCD 72-14
MCD 72-16
MCD 72-18
1B
8B
4
5
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
io1 B / io8 B
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 63°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
180
115
85
1700
1800
1540
1640
14 450
13 500
11 850
11 300
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
MCD
Version 8 B
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A/µs
Features
2
3
6 7 1
5 4 2
MCC
Version 1 B
3
1
5 4 2
MCD
Version 1 B
3
6
1
5 2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
MCC
Version 8 B
3
1
5 2
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 250 A
f = 50 Hz; t
P
=200 µs
V
D
= /
3
V
DRM
I
G
= 0.45 A
di
G
/dt = 0.45 A/µs
2
non repetitive, I
T
= I
TAVM
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
;
V
DR
= /
3
V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
;
I
T
= I
TAVM
;
t
P
= 30 µs
t
P
= 300 µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
• International standard package,
JEDEC TO-240 AA
• Direct copper bonded Al
2
O
3
-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Gate-cathode twin pins for version 1B
Applications
• DC motor control
• Softstart AC motor controller
• Light, heat and temperature control
Advantages
• Space and weight savings
• Simple mounting with two screws
• Improved temperature and power cycling
• Reduced protection circuits
419
50/60 Hz, RMS;
I
ISOL
≤
1 mA;
t = 1 min
t=1s
3000
3600
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-4
MCC 72
MCD 72
Symbol
I
RRM
, I
DRM
V
T
/V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
/I
F
= 300 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
T
VJ
T
VJ
T
VJ
= 25°C
= -40°C
= 25°C
= -40°C
Characteristic Values
5
1.74
0.85
3.2
2.5
2.6
150
200
0.2
10
450
200
2
typ. 185
170
45
0.3
0.15
0.5
0.25
12.7
9.6
50
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
µs
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
V
D
=
2
/
3
V
DRM
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 µs; -di/dt = 10 A/µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
=
2
/
3
V
DRM
T
VJ
= T
VJM
; I
T
/I
F
= 50 A, -di/dt = 6 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Optional accessories for module-type MCC 72 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type
ZY 200L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type
ZY 200R
(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
MCC / MCD Version 1 B
MCC Version 8 B
MCD Version 8 B
IXYS reserves the right to change limits, test conditions and dimensions
2-4
© 2004 IXYS All rights reserved
419
MCC 72
MCD 72
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
3-4
419
MCC 72
MCD 72
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.3
0.31
0.33
0.35
0.37
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.008
0.054
0.238
t
i
(s)
0.0019
0.047
0.3
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.5
0.51
0.53
0.55
0.57
Constants for Z
thJK
calculation:
i
1
2
3
4
IXYS reserves the right to change limits, test conditions and dimensions
R
thi
(K/W)
0.008
0.054
0.238
0.2
t
i
(s)
0.0019
0.047
0.3
1.25
419
4-4
© 2004 IXYS All rights reserved
