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MCP16312-E-MS

Switching Controllers

器件类别:半导体    电源管理   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Microchip(微芯科技)
产品种类
Product Category
Switching Controllers
RoHS
Details
Topology
Buck
Number of Outputs
1 Output
Switching Frequency
425 kHz to 575 kHz
Input Voltage
4.4 V to 30 V
Output Voltage
2 V to 24 V
Output Current
1 A
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 125 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
MSOP-8
系列
Packaging
Tube
工作温度范围
Operating Temperature Range
- 40 C to + 125 C
产品
Product
Voltage Regulators
类型
Type
Synchronous Step-Down Regulator
Shutdown
Shutdown
工厂包装数量
Factory Pack Quantity
100
单位重量
Unit Weight
0.004938 oz
文档预览
MCP16311/2
30V Input, 1A Output, High-Efficiency,
Integrated Synchronous Switch Step-Down Regulator
Features
Up to 95% Efficiency
Input Voltage Range: 4.4V to 30V
1A Output Current Capability
Output Voltage Range: 2.0V to 24V
Qualification: AEC-Q100 Rev. G, Grade 1 (-40°C
to 125°C)
Integrated N-Channel High-Side and Low-Side
Switches:
- 170 m, Low Side
- 300 m, High Side
Stable Reference Voltage: 0.8V
Automatic Pulse Frequency Modulation/Pulse-
Width Modulation (PFM/PWM) Operation
(MCP16311):
- PFM Operation Disabled (MCP16312)
- PWM Operation: 500 kHz
Low Device Shutdown Current: 3 µA typical
Low Device Quiescent Current:
- 44 µA (non-switching, PFM Mode)
Internal Compensation
Internal Soft-Start: 300 µs (EN low-to-high)
Peak Current Mode Control
Cycle-by-Cycle Peak Current Limit
Undervoltage Lockout (UVLO):
- 4.1V typical to start
- 3.6V typical to stop
Overtemperature Protection
Thermal Shutdown:
- +150°C
- +25°C Hysteresis
PIC
®
/dsPIC
®
Microcontroller Bias Supply
24V Industrial Input DC-DC Conversion
General Purpose DC-DC Conversion
Local Point of Load Regulation
Automotive Battery Regulation
Set-Top Boxes
Cable Modems
Wall Transformer Regulation
Laptop Computers
Networking Systems
AC-DC Digital Control Bias
Distributed Power Supplies
General Description
The MCP16311/2 is a compact, high-efficiency, fixed
frequency, synchronous step-down DC-DC converter in
an 8-pin MSOP, or 2 x 3 TDFN package that operates
from input voltage sources up to 30V. Integrated
features include a high-side and a low-side switch, fixed
frequency peak current mode control, internal
compensation, peak current limit and overtemperature
protection. The MCP16311/2 provides all the active
functions for local DC-DC conversion, with fast transient
response and accurate regulation.
High converter efficiency is achieved by integrating the
current-limited, low-resistance, high-speed high-side
and low-side switches and associated drive circuitry.
The MCP16311 is capable of running in PWM/PFM
mode. It switches in PFM mode for light load
conditions and for large buck conversion ratios. This
results in a higher efficiency over all load ranges. The
MCP16312 runs in PWM-only mode, and is
recommended for noise-sensitive applications.
The MCP16311/2 can supply up to 1A of continuous
current while regulating the output voltage from 2V to
12V. An integrated, high-performance peak current
mode architecture keeps the output voltage tightly
regulated, even during input voltage steps and output
current transient conditions common in power systems.
The EN input is used to turn the device on and off.
While off, only a few micro amps of current are
consumed from the input.
Output voltage is set with an external resistor divider.
The MCP16311/2 is offered in small MSOP-8 and 2 x 3
TDFN surface mount packages.
Applications
Package Type
MCP16311/2
MSOP
V
FB
1
V
CC
2
EN 3
V
IN
4
8
7
6
5
V
FB
A
GND
BOOST V
CC
SW
EN
P
GND
V
IN
MCP16311/2
2x3 TDFN*
1
2
3
4
EP
9
8 A
GND
7 BOOST
6 SW
5 P
GND
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2013-2014 Microchip Technology Inc.
DS20005255B-page 1
MCP16311/2
Typical Applications
V
IN
4.5V to 30V
C
IN
2 x 10 µF
BOOST
V
IN
EN
V
FB
V
CC
GND
SW
C
BOOST
L
1
100 nF 15 µH
V
OUT
3.3V @ 1A
C
OUT
2 x 10 µF
31.6 k
C
VCC
1 µF
10 k
V
in
6V to 30V
C
IN
2 x 10 µF
BOOST
V
IN
EN
V
FB
V
CC
GND
SW
C
BOOST
L
1
100 nF 22 µH
V
OUT
5V, @ 1A
C
OUT
2 x 10 µF
52.3 k
C
VCC
1 µF
10 k
100
90
V
OUT
= 5V
V
OUT
= 3.3V
80
Efficiency (%)
70
60
50
40
30
20
10
V
IN
= 12V
PWM ONLY
PWM/PFM
0
1
10
I
OUT
(mA)
100
1000
DS20005255B-page 2
2013-2014 Microchip Technology Inc.
MCP16311/2
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
IN,
SW ............................................................... -0.5V to 32V
BOOST – GND ................................................... -0.5V to 38V
BOOST – SW Voltage........................................ -0.5V to 6.0V
V
FB
Voltage ........................................................ -0.5V to 6.0V
EN Voltage ............................................. -0.5V to (V
IN
+ 0.3V)
Output Short-Circuit Current ................................. Continuous
Power Dissipation ....................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ....-40°C to +125°C
Operating Junction Temperature...................-40°C to +150°C
ESD Protection on All Pins:
HBM ..................................................................... 1 kV
MM ......................................................................200V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 7V, V
BOOST
- V
SW
= 5.0V,
V
OUT
= 5.0V, I
OUT
= 100 mA, L = 22 µH, C
OUT
= C
IN
= 2 x 10 µF X7R Ceramic Capacitors.
Boldface
specifications apply over the T
A
range of -40°C to +125°C.
Parameters
V
IN
Supply Voltage
Input Voltage
Quiescent Current
Quiescent Current -
PFM Mode
Quiescent Current -
PWM Mode
Quiescent Current -
Shutdown
V
IN
Undervoltage Lockout
Undervoltage Lockout Start
Undervoltage Lockout Stop
Undervoltage Lockout
Hysteresis
Output Characteristics
Feedback Voltage
Output Voltage
Adjust Range
Feedback Voltage
Line Regulation
Feedback Voltage
Load Regulation
Note 1:
V
FB
V
OUT
V
FB
/V
FB
)/V
IN
V
FB
/ V
FB
0.784
2.0
-0.15
0.800
0.01
0.25
0.816
24
0.15
V
V
%/V
%
I
OUT
= 5 mA
Note 2, Note 3
V
IN
= 7V to 30V,
I
OUT
= 50 mA
I
OUT
= 5 mA to 1A,
MCP16312
UVLO
STRT
UVLO
STOP
UVLO
HYS
3.18
0.2
4.1
3.6
0.5
4.4
1
V
V
V
V
IN
Rising
V
IN
Falling
V
IN
I
Q
I
Q_PFM
I
Q_PWM
I
Q_SHDN
4.4
44
85
3.8
3
30
60
8
9
V
µA
µA
mA
µA
Note 1
Nonswitching,
V
FB
= 0.9V
Switching,
I
OUT
= 0 (MCP16311)
Switching,
I
OUT
= 0 (MCP16312)
V
OUT
= EN = 0V
Sym.
Min.
Typ.
Max.
Units
Conditions
2:
3:
4:
The input voltage should be greater than the output voltage plus headroom voltage; higher load currents
increase the input voltage necessary for regulation. See characterization graphs for typical input-to-output
operating voltage range.
For V
IN
< V
OUT
, V
OUT
will not remain in regulation; for output voltages above 12V, the maximum current
will be limited to under 1A.
Determined by characterization, not production tested.
This is ensured by design.
2013-2014 Microchip Technology Inc.
DS20005255B-page 3
MCP16311/2
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 7V, V
BOOST
- V
SW
= 5.0V,
V
OUT
= 5.0V, I
OUT
= 100 mA, L = 22 µH, C
OUT
= C
IN
= 2 x 10 µF X7R Ceramic Capacitors.
Boldface
specifications apply over the T
A
range of -40°C to +125°C.
Parameters
Feedback Input
Bias Current
Output Current
Switching Characteristics
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
High-Side NMOS Switch-On
Resistance
Buck NMOS Switch
Current Limit
Synchronous NMOS Switch-
On Resistance
EN Input Characteristics
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-Start Time
Thermal Characteristics
Thermal Shutdown
Die Temperature
Die Temperature Hysteresis
Note 1:
T
SD
T
SDHYS
150
25
°C
°C
Note 3
Note 3
V
IH
V
IL
I
ENLK
t
SS
1.85
0.1
300
0.4
1
V
V
µA
µs
V
EN
= 5V
EN Low-to-High,
90% of V
OUT
f
SW
DC
MAX
DC
MIN
R
DS(ON)
I
(MAX)
R
DS(ON)
425
85
500
94
2
0.3
1.8
0.17
575
kHz
%
%
A
Note 3
Note 4
V
BOOST
– V
SW
= 5V,
Note 3
V
BOOST
– V
SW
= 5V,
Note 3
Note 3
Sym.
I
FB
I
OUT
Min.
1
Typ.
10
Max.
250
Units
nA
A
Notes 1
to
3, Figure 2-7
Conditions
2:
3:
4:
The input voltage should be greater than the output voltage plus headroom voltage; higher load currents
increase the input voltage necessary for regulation. See characterization graphs for typical input-to-output
operating voltage range.
For V
IN
< V
OUT
, V
OUT
will not remain in regulation; for output voltages above 12V, the maximum current
will be limited to under 1A.
Determined by characterization, not production tested.
This is ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 7V, V
BOOST
- V
SW
= 5.0V,
V
OUT
= 5.0V.
Parameters
Temperature Ranges
Operating Junction Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-2x3 TDFN
JA
JA
211
52.5
°C/W
°C/W
EIA/JESD51-3 Standard
EIA/JESD51-3 Standard
T
J
T
A
T
J
-40
-65
+125
+150
+150
°C
°C
°C
Transient
Steady State
Sym.
Min.
Typ.
Max.
Units
Conditions
DS20005255B-page 4
2013-2014 Microchip Technology Inc.
MCP16311/2
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
IN
= EN = 7V, C
OUT
= C
IN
= 2 x 10 µF, L = 22 µH, V
OUT
= 5.0V, I
LOAD
= 100 mA,
T
A
= +25°C
,
8L-MSOP package.
100
90
80
Efficiency (%)
70
60
50
40
30
20
10
0
1
10
I
OUT
(mA)
100
1000
PWM/PFM
PWM ONLY
V
IN
= 24V
V
IN
= 30V
V
IN
= 12V
V
IN
= 6V
100
I
OUT
= 800 mA
80
Efficiency (%)
I
OUT
= 200 mA
I
OUT
= 10 mA
60
40
20
PWM/PFM option
0
5
10
15
V
IN
(V)
20
25
30
FIGURE 2-1:
I
OUT
.
100
90
80
Efficiency (%)
70
60
50
40
30
20
10
0
1
V
IN
= 12V
3.3V V
OUT
Efficiency vs.
FIGURE 2-4:
3.3V V
OUT
Efficiency vs.V
IN
.
100
I
OUT
= 800 mA
80
V
IN
= 24V
V
IN
= 30V
Efficiency (%)
I
OUT
= 200 mA
60
40
20
I
OUT
= 10 mA
PWM/PFM
PWM ONLY
PWM/PFM option
0
10
I
OUT
(mA)
100
1000
6
10
14
18
V
IN
(V)
22
26
30
FIGURE 2-2:
I
OUT
.
100
90
80
Efficiency (%)
70
60
50
40
30
20
10
0
1
V
IN
= 24V
5.0V V
OUT
Efficiency vs.
FIGURE 2-5:
5.0V V
OUT
Efficiency vs.V
IN
.
100
V
IN
= 15V
V
IN
= 30V
80
Efficiency (%)
60
I
OUT
= 800 mA
I
OUT
= 200 mA
I
OUT
= 10 mA
40
20
PWM/PFM
PWM ONLY
PWM/PFM option
0
12
14
16
18
20 22
V
IN
(V)
24
26
28
30
10
I
OUT
(mA)
100
1000
FIGURE 2-3:
I
OUT
.
12.0V V
OUT
Efficiency vs.
FIGURE 2-6:
V
IN
.
12.0V V
OUT
Efficiency vs.
2013-2014 Microchip Technology Inc.
DS20005255B-page 5
查看更多>
参数对比
与MCP16312-E-MS相近的元器件有:MCP16312T-E-MNY、MCP16312T-E-MS。描述及对比如下:
型号 MCP16312-E-MS MCP16312T-E-MNY MCP16312T-E-MS
描述 Switching Controllers Switching Controllers Switching Controllers
Product Attribute Attribute Value Attribute Value Attribute Value
制造商
Manufacturer
Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
产品种类
Product Category
Switching Controllers Switching Controllers Switching Controllers
RoHS Details Details Details
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
MSOP-8 TDFN-8 MSOP-8
工厂包装数量
Factory Pack Quantity
100 3300 2500
单位重量
Unit Weight
0.004938 oz 0.001764 oz 0.004938 oz
系列
Packaging
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