MCP606/7/8/9
2.5V to 6.0V Micropower CMOS Op Amp
Features
• Low Input Offset Voltage: 250 µV (maximum)
• Rail-to-Rail Output
• Low Input Bias Current: 80 pA (maximum at
+85°C)
• Low Quiescent Current: 25 µA (maximum)
• Power Supply Voltage: 2.5V to 6.0V
• Unity-Gain Stable
• Chip Select (CS) Capability:
MCP608
• Industrial Temperature Range: -40°C to +85°C
• No Phase Reversal
• Available in Single, Dual and Quad Packages
Description
The MCP606/7/8/9 family of operational amplifiers (op
amps) from Microchip Technology Inc. are unity-gain
stable with low offset voltage (250 µV, maximum).
Performance characteristics include rail-to-rail output
swing capability and low input bias current (80 pA at
+85°C, maximum). These features make this family of
op amps well suited for single-supply, precision,
high-impedance, battery-powered applications.
The single is available in standard 8-lead PDIP, SOIC
and TSSOP packages, as well as in a SOT-23-5
package. The single MCP608 with Chip Select (CS) is
offered in the standard 8-lead PDIP, SOIC and TSSOP
packages. The dual MCP607 is offered in the standard
8-lead PDIP, SOIC and TSSOP packages. Finally, the
quad MCP609 is offered in the standard 14-lead PDIP,
SOIC and TSSOP packages. All devices are fully
specified from -40°C to +85°C, with power supplies
from 2.5V to 6.0V.
Typical Applications
•
•
•
•
•
Battery Power Instruments
High-Impedance Applications
Strain Gauges
Medical Instruments
Test Equipment
Package Types
MCP606
PDIP, SOIC,TSSOP
NC
V
IN
–
V
IN
+
V
SS
1
2
3
4
8
7
6
5
NC
V
DD
V
OUT
NC
MCP606
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
4 V
IN
–
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Mindi™ Circuit Designer & Simulator
Analog Demonstration and Evaluation Boards
Application Notes
MCP607
PDIP, SOIC,TSSOP
V
OUTA
V
INA
–
V
INA
+
V
SS
1
2
3
4
8
7
6
5
MCP608
PDIP, SOIC,TSSOP
8
7
6
5
CS
V
DD
V
OUT
NC
Typical Application
V
OUT
= V
LM
+
I
L
R
SEN
(
RF
⁄
R
G
)
I
L
To Load
(V
LP
)
V
OUT
NC 1
V
DD
V
OUTB
V
IN
– 2
V
INB
– V
IN
+ 3
V
INB
+ V
SS
4
R
G
5 kΩ
2.5V
to
6.0V
R
SEN
10Ω
R
F
50 kΩ
MCP609
PDIP, SOIC,TSSOP
V
OUTA
V
INA
–
V
INA
+
V
DD
V
INB
+
V
INB
–
V
OUTB
1
2
3
4
5
6
7
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
MCP606
To Load
(V
LM
)
Low-Side Battery Current Sensor
©
2008 Microchip Technology Inc.
DS11177E-page 1
MCP606/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+, V
IN
–) †† ........ V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current .................................Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature..................................–65° C to +150° C
Maximum Junction Temperature (T
J
) ........................ .+150° C
ESD Protection On All Pins (HBM; MM)
.............. ≥
3 kV; 200V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
, and CS is tied low (refer to
Figure 1-2
and
Figure 1-3).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
At Temperature
Input Offset Bias Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain
(Large-signal)
DC Open-Loop Gain
(Large-signal)
Output
Maximum Output Voltage Swing
V
OL
, V
OH
V
OL
, V
OH
Linear Output Voltage Range
V
OUT
V
OUT
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
V
DD
I
Q
2.5
—
—
18.7
6.0
25
V
µA
I
O
= 0
I
SC
I
SC
V
SS
+ 15
V
SS
+ 45
V
SS
+ 50
V
SS
+ 100
—
—
—
—
—
—
7
17
V
DD
– 20
V
DD
– 60
V
DD
– 50
V
DD
– 100
—
—
mV
mV
mV
mV
mA
mA
R
L
= 25 kΩ to V
L
,
0.5V input overdrive
R
L
= 5 kΩ to V
L
,
0.5V input overdrive
R
L
= 25 kΩ to V
L
,
A
OL
≥
105 dB
R
L
= 5 kΩ to V
L
,
A
OL
≥
100 dB
V
DD
= 2.5V
V
DD
= 5.5V
A
OL
A
OL
105
100
121
118
—
—
dB
dB
R
L
= 25 kΩ to V
L
,
V
OUT
= 50 mV to V
DD
– 50 mV
R
L
= 5 kΩ to V
L
,
V
OUT
= 0.1V to V
DD
– 0.1V
V
CMR
CMRR
V
SS
– 0.3
75
91
V
DD
– 1.1
—
V
dB
CMRR
≥
75 dB
V
DD
= 5V, V
CM
= -0.3V to 3.9V
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
1
—
1
10
13
||6
10
13
||6
—
80
—
—
—
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
V
OS
ΔV
OS
/ΔT
A
PSRR
-250
—
80
—
±1.8
93
+250
—
—
µV
µV/°C T
A
= -40°C to +85°C
dB
Sym
Min
Typ
Max
Units
Conditions
All parts with date codes November 2007 and later have been screened to ensure operation at V
DD
= 6.0V. However,
the other minimum and maximum specifications are measured at 2.5V and 5.5V.
©
2008 Microchip Technology Inc.
DS11177E-page 2
MCP606/7/8/9
AC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF, and CS is tied low (refer to
Figure 1-2
and
Figure 1-3).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
2.8
38
3
—
—
—
µV
P-P
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
155
62
0.08
—
—
—
kHz
°
V/µs
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
MCP608 CHIP SELECT CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF, and CS is tied low (refer to
Figure 1-2
and
Figure 1-3).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage, CS High
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output Hi-Z
CS Hysteresis
t
ON
t
OFF
V
HYST
—
—
—
9
0.1
0.6
100
—
—
µs
µs
V
CS = 0.2V
DD
to V
OUT
= 0.9 V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS = 0.8V
DD
to V
OUT
= 0.1 V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
V
DD
= 5.0V
V
IH
I
CSH
I
SS
I
O(LEAK)
0.8 V
DD
—
-2
—
—
0.01
-0.05
10
V
DD
0.1
—
—
V
µA
µA
nA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
-0.1
—
0.01
0.2 V
DD
—
V
µA
CS = 0.2V
DD
Sym
Min
Typ
Max
Units
Conditions
CS
t
ON
V
OUT
I
SS
I
CS
Hi-Z
-50 nA
(typical)
-50 nA
(typical)
V
IL
V
IH
t
OFF
Hi-Z
-18.7 µA
(typical)
-50 nA
(typical)
-50 nA
(typical)
FIGURE 1-1:
Timing Diagram for the CS
Pin on the MCP608.
©
2008 Microchip Technology Inc.
DS11177E-page 3
MCP606/7/8/9
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-TSSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
256
85
163
124
70
120
100
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+85
+125
+150
°C
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
The MCP606/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the
Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in
Figure 1-2
and
Figure 1-3.
The bypass
capacitors are laid out according to the rules discussed
in
Section 4.5 “Supply Bypass”.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
DD
/2 R
G
R
F
V
L
R
L
V
IN
MCP60X
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
V
DD
R
N
0.1 µF 1 µF
V
OUT
C
L
V
IN
R
G
R
F
V
L
R
L
V
DD
/2
MCP60X
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
DS11177E-page 4
©
2008 Microchip Technology Inc.
MCP606/7/8/9
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
, C
L
= 60 pF, and CS is tied low.
Percentage of Occurances ( )
16%
14%
12%
10%
8%
6%
4%
2%
0%
0
-250
-200
-150
-100
-50
50
100
150
200
250
1200 Samples
V
DD
= 5.5V
16%
Percentage of Occurances
14%
12%
10%
8%
6%
4%
2%
0%
-8
-6
-4
-2
0
2
4
6
Input Offset Voltage Drift (µV/°C)
8
206 Samples
V
DD
= 5.5V
Input Offset Voltage (µV)
FIGURE 2-1:
V
DD
= 5.5V.
Percentage of Occurances ( )
16%
14%
12%
10%
8%
6%
4%
2%
0%
Input Offset Voltage at
FIGURE 2-4:
Input Offset Voltage Drift
Magnitude at V
DD
= 5.5V.
18%
Percentage of Occurances
206 Samples
V
DD
= 2.5V
1200 Samples
V
DD
= 2.5V
16%
14%
12%
10%
8%
6%
4%
2%
0%
-50
0
-250
-200
-150
-100
50
100
150
200
250
Input Offset Voltage (µV)
-8
-6
-4
-2
0
2
4
6
Input Offset Voltage Drift (µV/°C)
8
FIGURE 2-2:
V
DD
= 2.5V.
22
20
18
16
14
12
10
8
6
4
2
0
Input Offset Voltage at
FIGURE 2-5:
Input Offset Voltage Drift
Magnitude at V
DD
= 2.5V.
24
Quiescent Current
per Amplifier (µA)
22
20
18
16
14
12
V
DD
= 2.5V
V
DD
= 5.5V
Quiescent Current
per Amplifier (µA)
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Power Supply Voltage.
FIGURE 2-6:
Quiescent Current vs.
Ambient Temperature.
©
2008 Microchip Technology Inc.
DS11177E-page 5
