MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
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•
•
•
•
•
•
Pb−Free Package is Available
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
A
K
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage
(Note 1) (T
J
= −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12DSM
MCR12DSN
On−State RMS Current
(180° Conduction Angles; T
C
= 75°C)
Average On−State Current
(180° Conduction Angles; T
C
= 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
T
J
= 110°C)
Circuit Fusing Consideration
(t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width
≤
1.0
msec,
T
C
= 75°C)
Forward Average Gate Power
(t = 8.3 msec, T
C
= 75°C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
msec,
T
C
= 75°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
T(AV)
I
TSM
12
7.6
100
A
A
A
1
2
3
Y
WW
x
Value
Unit
4
V
1 2
3
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
YWW
R1
2DSx
4
DPAK−3
CASE 369D
STYLE 4
YWW
R1
2DSx
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
41
5.0
0.5
2.0
−40 to 110
−40 to 150
A
2
sec
W
W
1
A
°C
°C
2
3
4
= Year
= Work Week
= M or N
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
MCR12DSM, MCR12DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance
− Junction−to−Ambient
Thermal Resistance
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
2.2
88
80
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1.0 KW)
T
J
= 25°C
T
J
= 110°C
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (I
GR
= 10
mA)
Peak Reverse Gate Blocking Current, (V
GR
= 10 V)
Peak Forward On−State Voltage (Note 5), (I
TM
= 20 A)
Gate Trigger Current (Continuous dc) (Note 6)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc) (Note 6)
(V
D
= 12 V, R
L
= 100
W)
T
J
= 25°C
T
J
= −40°C
V
GT
T
J
= 25°C
T
J
= −40°C
T
J
= 110°C
I
H
T
J
= 25°C
T
J
= −40°C
I
L
T
J
= 25°C
T
J
= −40°C
tgt
−
2.0
5.0
0.5
−
1.0
−
6.0
10
ms
0.5
−
1.0
−
6.0
10
mA
0.45
−
0.2
0.65
−
−
1.0
1.5
−
mA
V
GRM
I
GRM
V
TM
I
GT
5.0
−
12
−
200
300
V
10
−
−
12.5
−
1.3
18
1.2
1.9
V
mA
V
mA
I
DRM
,
I
RRM
mA
—
—
—
—
10
500
Symbol
Min
Typ
Max
Unit
Holding Current
(V
D
= 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current
(V
D
= 12 V, I
G
= 2.0 mA)
Turn−On Time
(Source Voltage = 12 V, R
S
= 6.0 KW, I
T
= 16 A(pk), R
GK
= 1.0 KW)
(V
D
= Rated V
DRM
, Rise Time = 20 ns, Pulse Width = 10
ms)
DYNAMIC CHARACTERISTICS
Characteristics
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
R
GK
= 1.0 KW, T
J
= 110°C)
Symbol
dv/dt
Min
2.0
Typ
10
Max
−
Unit
V/ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or R
GK
= 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
6. R
GK
current not included in measurement.
ORDERING INFORMATION
Device
MCR12DSMT4
MCR12DSMT4G
MCR12DSN−001
MCR12DSNT4
Package Type
DPAK
DPAK
(Pb−Free)
DPAK−3
DPAK
Package
369C
369C
369D
369C
Shipping
†
16 mm Tape & Reel (2.5 k / Reel)
16 mm Tape & Reel (2.5 k / Reel)
75 Units / Rail
16 mm Tape & Reel (2.5 k / Reel)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR12DSM, MCR12DSN
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
105
100
95
90
85
80
75
70
0
a
dc
180°
a
= 30°
3.0
4.0
60°
5.0
90°
6.0
120°
7.0
8.0
16
14
12
10
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
a
90°
60°
dc
120°
180°
a
= Conduction
Angle
a
= 30°
a
= Conduction
Angle
1.0
2.0
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
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3
MCR12DSM, MCR12DSN
I T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
100
r(t) , TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL @ T
J
= 25°C
MAXIMUM @ T
J
= 110°C
10
1.0
0.1
Z
qJC(t)
= R
qJC(t)
Sr(t)
MAXIMUM @ T
J
= 25°C
1.0
0.1
0
1.0
2.0
3.0
4.0
5.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
1000
I GT, GATE TRIGGER CURRENT (
m
A)
1.0
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.1
−10
5.0
20
35
50
65
80
95
110
−40 −25
−10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
R
GK
= 1.0 KW
100
10
GATE OPEN
1.0
−40 −25
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
10
R
GK
= 1.0 KW
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
10
R
GK
= 1.0 KW
1.0
1.0
0.1
−40 −25
−10
5.0
20
35
50
65
80
95
110
0.1
−40 −25
−10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
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4
Figure 8. Typical Latching Current versus
Junction Temperature
MCR12DSM, MCR12DSN
10
T
J
= 25°C
IH, HOLDING CURRENT (mA)
8.0
STATIC dv/dt (V/
m
s)
100
70°C
90°C
T
J
= 110°C
10
1000
6.0
I
GT
= 25
mA
4.0
I
GT
= 10
mA
2.0
0
100
1.0
1000
R
GK
, GATE−CATHODE RESISTANCE (OHMS)
10 K
100
R
GK
, GATE−CATHODE RESISTANCE (OHMS)
1000
Figure 9. Holding Current versus
Gate−Cathode Resistance
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
1000
T
J
= 110°C
400 V
STATIC dv/dt (V/
m
s)
100
STATIC dv/dt (V/
m
s)
600 V
V
PK
= 800 V
10
V
D
= 800 V
T
J
= 110°C
100
I
GT
= 25
mA
I
GT
= 10
mA
10
1.0
100
R
GK
, GATE−CATHODE RESISTANCE (OHMS)
1000
1.0
100
R
GK
, GATE−CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
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