DRAM Card, 1MX32, 70ns, MOS
厂商名称:Mitsubishi(日本三菱)
厂商官网:http://www.mitsubishielectric.com/semiconductors/
下载文档型号 | MF14M1-L57ATXX | MF14M1-L57AT01 | MF14M1-L57AT00 |
---|---|---|---|
描述 | DRAM Card, 1MX32, 70ns, MOS | DRAM Card, 1MX32, 70ns, MOS | DRAM Card, 1MX32, 70ns, MOS |
厂商名称 | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
访问模式 | PAGE | PAGE | PAGE |
最长访问时间 | 70 ns | 70 ns | 70 ns |
其他特性 | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH |
备用内存宽度 | 16 | 16 | 16 |
JESD-30 代码 | X-XXMA-X88 | X-XXMA-X88 | X-XXMA-X88 |
内存密度 | 33554432 bit | 33554432 bit | 33554432 bit |
内存集成电路类型 | DRAM CARD | DRAM CARD | DRAM CARD |
内存宽度 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 |
端子数量 | 88 | 88 | 88 |
字数 | 1048576 words | 1048576 words | 1048576 words |
字数代码 | 1000000 | 1000000 | 1000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 55 °C | 55 °C | 55 °C |
组织 | 1MX32 | 1MX32 | 1MX32 |
输出特性 | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装形状 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 1024 | 1024 | 1024 |
最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V |
最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO |
技术 | MOS | MOS | MOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
端子位置 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |