MF34
MF34
Fast Recovery Diode
Replaces March 1998 version, DS4624-2.1
DS4624-3.0 January 2000
APPLICATIONS
s
Inverse, Parallel Or Series Connected Diode
s
Power Supplies
s
High Frequency Applications
KEY PARAMETERS
V
RRM
1600V
I
F(AV)
40A
I
FSM
400A
Q
r
25
µ
C
t
rr
0.25ns
FEATURES
s
Glass Passivation
s
High Voltage Capability
s
Fast Recovery Characteristics
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
1600
1400
1200
1000
800
Conditions
MF34 - 1600
MF34 -1400
MF34 - 1200
MF34 -1000
MF34 - 800
V
RSM
= V
RRM
+100V
Lower voltage grades available.
For stud anode add suffix 'R' to type number. e.g. MF34-1600R.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
F(AV)
I
F(RMS)
I
F
Parameter
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half sine wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
Max.
40
63
50
Units
A
A
A
1/7
MF34
SURGE RATINGS
Symbol
I
FSM
I
2
t
Parameter
Surge (non-repetitive) forward current
I
2
t for fusing
Conditions
10ms half sine; with V
RRM
≤
10V, T
j
= 125
o
C
10ms half sine; T
j
= 125
o
C
Max.
400
800
Units
A
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Mounting torque
-
-55
3.5
125
125
4.0
o
Conditions
Min.
-
-
-
Max.
0.8
0.2
125
Units
o
C/W
o
C/W
o
C
C
˚C
Nm
CHARACTERISTICS
Symbol
V
FM
I
RM
t
rr
Q
R
V
TO
r
T
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge
Threshold voltage
Slope resistance
Parameter
Conditions
At 120A peak, T
case
= 25 C
At V
RRM
, T
case
= 100
o
C
I
F
= 1A, di
RR/
dt = 25A/µs, T
case
= 25˚C,
V
R
= 100V
I
F
= 50A, di
RR/
dt = 50A/µs, T
case
= 25˚C,
V
R
= 100V
At T
vj
= 125 C
At T
vj
= 125 C
o
o
o
Typ.
-
-
-
-
-
-
Max.
2.0
5
250
25
1.2
7.0
Units
V
mA
ns
µC
V
mΩ
2/7
MF34
CURVES
200
Measured under pulse
conditions
T
j
= 25˚C
Instantaneous forward current - (A)
150
T
j
= 125˚C
100
50
0
0
1.0
2.0
3.0
Instantaneous forward voltage - (V)
Fig.1 Maximum (limit) forward characteristics
Peak half sinewave forward current - (A)
400
Thermal impedance - ˚C/W
T
case
= 125˚C
V
R
= V
RRM
1.00
d.c.
0.75
350
300
0.50
250
0.25
200
1
2
3 45
10
50
0
0.001
0.01
Cycles at 50Hz
Duration
Fig.2 Surge (non-repetitive) forward current vs time
0.1
Time - (s)
1.0
10
Fig.3 Maximum transient thermal impedance
3/7
MF34
500
T
case
= 65˚
Peak current - (A)
100
50
10
00
0
50
00
25
00
10
00
50
0
30
0
H
10 z
0
10
10
100
1000
Pulse width - (µs)
Fig.4 Frequency curves - square waveform
10000
500
T
case
= 85˚
Peak current - (A)
100
50
10
00 500 250
0
0
0
10
00
50
0
30
0
H
10 z
0
10
10
100
1000
Pulse width - (µs)
Fig.5 Frequency curves - square waveform
10000
500
0.05
Peak current - (A)
0.1
0.2
0.5
1.0
2.0J
100
10
10
100
1000
Pulse width - (µs)
Fig.6 Energy per pulse - square waveform
10000
4/7
MF34
500
T
case
= 65˚
Peak current - (A)
100
10
00
0
50
00
25
00
10
00
50
0
30
0
50
H
10 z
0
10
10
100
1000
Pulse width - (µs)
Fig.7 Frequency curves - sine waveform
10000
500
T
case
= 85˚
Peak current - (A)
100
10
00
50
25
00
10
00
50
30
50
H
10 z
0
0
00
0
0
10
10
100
1000
Pulse width - (µs)
Fig.8 Frequency curves - sine waveform
10000
500
0.05 0.1
0.2
0.5
1.0
2.0J
Peak current - (A)
100
10
10
100
1000
Pulse width - (µs)
Fig.9 Energy per pulse - sine waveform
10000
5/7
NXP MCU
