9.1 GHz - 9.6 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE
厂商名称:Microsemi
厂商官网:https://www.microsemi.com
器件标准:
下载文档型号 | MI5003-18 | MI5001 | MI5022-18 | MI5004-18 | MI5001-18 |
---|---|---|---|---|---|
描述 | 9.1 GHz - 9.6 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE | 9.1 GHz - 9.6 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE | 9.5 GHz - 10.2 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE IMPATT DIODE | 9.1 GHz - 9.5 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE | 5.1 GHz - 5.4 GHz, GALLIUM ARSENIDE, PULSED IMPATT DIODE |
是否Rohs认证 | 符合 | - | 符合 | - | 符合 |
厂商名称 | Microsemi | - | Microsemi | - | Microsemi |
包装说明 | O-CUPM-N1 | - | O-CUPM-N1 | - | CERAMIC, ROHS COMPLIANT, M18 |
Reach Compliance Code | compli | - | compli | - | compli |
ECCN代码 | EAR99 | - | EAR99 | - | EAR99 |
应用 | PULSED | - | CONTINUOUS WAVE | - | PULSED |
外壳连接 | CATHODE | - | CATHODE | - | CATHODE |
配置 | SINGLE | - | SINGLE | - | SINGLE |
二极管元件材料 | GALLIUM ARSENIDE | - | GALLIUM ARSENIDE | - | GALLIUM ARSENIDE |
二极管类型 | IMPATT DIODE | - | IMPATT DIODE | - | IMPATT DIODE |
JESD-30 代码 | O-CUPM-N1 | - | O-CUPM-N1 | - | O-CUPM-N1 |
元件数量 | 1 | - | 1 | - | 1 |
端子数量 | 1 | - | 1 | - | 1 |
典型工作电流 | 1700 mA | - | 400 mA | - | 1000 mA |
最大工作频率 | 9.6 GHz | - | 10.2 GHz | - | 5.4 GHz |
最小工作频率 | 9.1 GHz | - | 9.5 GHz | - | 5.1 GHz |
标称工作电压 | 60 V | - | 45 V | - | 85 V |
最小输出功率 | 15 W | - | 3.5 W | - | 10 W |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND | - | ROUND | - | ROUND |
封装形式 | POST/STUD MOUNT | - | POST/STUD MOUNT | - | POST/STUD MOUNT |
认证状态 | Not Qualified | - | Not Qualified | - | Not Qualified |
表面贴装 | NO | - | NO | - | NO |
技术 | IMPATT | - | IMPATT | - | IMPATT |
端子形式 | NO LEAD | - | NO LEAD | - | NO LEAD |
端子位置 | UPPER | - | UPPER | - | UPPER |