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MIC44F18_11

6 A BUF OR INV BASED MOSFET DRIVER, PDSO8
6 A 缓冲或反向 场效应管管驱动器, PDSO8

器件类别:半导体    模拟混合信号IC   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

下载文档
器件参数
参数名称
属性值
功能数量
1
端子数量
8
最大工作温度
125 Cel
最小工作温度
-40 Cel
最大供电电压1
13.2 V
最小供电电压1
4.5 V
额定供电电压1
5 V
导通时间
0.0350 us
关断时间
0.0350 us
加工封装描述
铅 FREE, MSOP-8
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
工艺
BCDMOS
包装形状
SQUARE
包装尺寸
SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH
表面贴装
Yes
端子形式
GULL WING
端子间距
0.6500 mm
端子涂层
MATTE 锡
端子位置
包装材料
塑料/环氧树脂
温度等级
AUTOMOTIVE
接口类型
缓冲或反向 场效应管管驱动器
额定输出峰值电流限制
6 A
文档预览
MIC44F18/19/20
6A, 12.6V High Speed MOSFET Drivers with Enable Input
Features
4.5V to 12.6V Input Operating Range
6A Peak Output Current
High Accuracy ±5% Enable Input Threshold
High Speed Switching Capability
- 10 ns Rise Time in 1000 pF Load
- <15 ns Propagation Delay Time
Flexible UVLO Function
- 4.2V Internally Set UVLO
- Programmable with External Resistors
Latch-Up Protection to >500 mA Reverse Current
on the Output Pin
Enable Function
Thermally Enhanced ePAD MSOP-8 Package
Option
Miniature 2 mm x 2 mm DFN-8 Package Option
Pb-Free Packaging
General Description
The MIC44F18, MIC44F19, and MIC44F20 are
high-speed single MOSFET drivers capable of sinking
and sourcing 6A for driving capacitive loads. With delay
times of less than 15 ns and rise times into a 1000 pF
load of 10 ns, these MOSFET drivers are ideal for
driving large gate charge MOSFETs in power supply
applications. The MIC44F18 is a non-inverting driver,
the MIC44F19 is an inverting driver suited for driving
P-Channel MOSFETs, and the MIC44F20 is an
inverting driver for N-Channel MOSFETs.
Fabricated using proprietary BiCMOS/DMOS process
for low power consumption and high efficiency, the
MIC44F18/19/20 translates TTL or CMOS input logic
levels to output voltage levels that swing within 25 mV
of the positive supply or ground. Comparable bipolar
devices are capable of swinging only to within 1V of the
supply.
The input supply voltage range of the MIC44F18/19/20
is 4.5V to 12.6V, making the devices suitable for driving
MOSFETs in a wide range of power applications. Other
features include an enable function, latch-up
protection, and a programmable UVLO function.
The MIC44F18/19/20 has a junction temperature range
of –40°C to +125°C with exposed pad ePAD MSOP-8
and 2 mm x 2 mm DFN-8 package options.
Applications
• Synchronous Switch-Mode Power Supplies
• Secondary Side Synchronous Rectification
Package Types
8-Pin ePAD MSOP
(MME)
8-Pin 2 mm x 2 mm DFN
(ML)
OUT 1
VDD 2
NC 3
IN 4
EP
8 OUT
7 GND
6 GND
5 EN/UVLO
OUT 1
VDD 2
NC 3
IN 4
EP
8
7
6
5
OUT
GND
GND
EN/UVLO
Please see pin descriptions in
Table 3-1.
2017 Microchip Technology Inc.
DS20005900A-page 1
MIC44F18/19/20
Typical Application Circuits
MOSFET Driver with 6.2V UVLO Externally Set
4.5V to
12.6V
MOSFET Driver with 4.2V UVLO Internally Set
4.5V to
12.6V
VDD
40
600
EN/
UVLO
10
Input
IN
240
EN/UVLO
DRIVER
DRIV ER
600
EN/
UVLO
OUT
Input
IN
240
EN/UVLO
VDD
DRIVER
DRIV ER
OUT
GND
MIC44F18
GND
MIC44F18
Functional Block Diagram
VDD
MIC4419/20:
Inverting
EN/UVLO
EN/UVLO
and
Control
Input
VIN
(Control Input)
GND
MIC4418:
Non-Inverting
OUT
OUT
GND
DS20005900A-page 2
2017 Microchip Technology Inc.
MIC44F18/19/20
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (V
DD
) ................................................................................................................................................+13V
UVLO/Enable Voltage (V
UVLO/EN
).............................................................................................................................+13V
Input Voltage (V
IN
) .................................................................................................................. (V
S
+ 0.1V) to (GND – 5V)
Output Voltage (V
OUT
) ..............................................................................................................................................+13V
ESD Rating (Note
1)
Pins 1, 2, 3, 5, 6, 7, 8 ................................................................................................................................................. 2 kV
Pin 4 ..........................................................................................................................................................................500V
Operating Ratings ‡
Supply Voltage (V
DD
) .............................................................................................................................. +4.5V to +12.6V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
2017 Microchip Technology Inc.
DS20005900A-page 3
MIC44F18/19/20
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
4.5V
V
DD
12.6V, C
L
= 1000 pF; T
A
= +25°C.
Bold
values indicate –40°C
T
J
+125°C.
Note 1
Parameter
Power Supply
Supply Voltage Range
High Output Quiescent
Current
Low Output Quiescent
Current
Shutdown Current
EN/UVLO
Enable Threshold
Enable Hysteresis
Undervoltage Lockout
Threshold (Internally Set)
UVLO Hysteresis
Undervoltage Lockout
Threshold (Externally Set)
Input
Input Voltage Range
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
Output
Output High Voltage
Output Low Voltage
Output Resistance, Output
High
Output Resistance, Output
Low
Peak Output Sink Current
Peak Output Source Current
Latch-Up Protection
Withstand Reverse Current
V
OH
V
OL
V
S
0.025
R
O
I
PEAK
I
R
6
6
>500
0.025
2
3
2
3
V
V
A
A
mA
See
Functional Block Diagram
See
Functional Block Diagram
I
OUT
= 100 mA, V
DD
= 12V
I
OUT
= 100 mA, V
DD
= 5V
I
OUT
= 100 mA, V
DD
= 12V
I
OUT
= 100 mA, V
DD
= 5V
V
DD
= 12V
V
S
= 12V
V
IN
V
IH
V
IL
I
IN
0
1.615
1.53
1.45
1.377
1.7
1.7
1.53
1.53
V
DD
1.785
1.87
1.607
1.683
5
V
V
V
µA
Steady State Voltage,
Note 2
T
A
= +25°C (±5%)
Over temperature range (±10%)
T
A
= +25°C (±5%)
Over temperature range (±10%)
4.5V
V
IN
10V
V
EN
V
EN_HYS
V
UVLO
V
UVLO
1.3
3.6
V
EN(MAX)
Symbol
V
DD
I
S
Min.
4.5
Typ.
1.4
120
4.2
370
Max.
12.6
2.5
Units
V
mA
Conditions
V
IN
= 5V (MIC44F18),
V
IN
= 0V (MIC44F19/20)
V
IN
= 0V (MIC44F18),
V
IN
= 5V (MIC44F19/20)
V
EN
= 0V
V
EN
= open, V
DD
rising.
V
DD
rising
2.5
200
1.5
4.4
V
DD
µA
V
mV
V
mV
V
I
SD
DS20005900A-page 4
2017 Microchip Technology Inc.
MIC44F18/19/20
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
4.5V
V
DD
12.6V, C
L
= 1000 pF; T
A
= +25°C.
Bold
values indicate –40°C
T
J
+125°C.
Note 1
Parameter
Switching Time
Rise Time
Fall Time
Delay Time
Delay Time
Pulse Width
Maximum Input Frequency
Note 1:
2:
3:
t
R
t
F
t
D1
t
D2
t
PW
f
MAX
50
10
10
15
13
Note 3
20
20
35
35
ns
ns
ns
ns
ns
MHz
V
S
= 12V, C
L
= 1000 pF
See Timing Diagram
V
S
= 12V, C
L
= 1000 pF
See Timing Diagram
V
S
= 12V, C
L
= 1000 pF
See Timing Diagram
V
S
= 12V, C
L
= 1000 pF
See Timing Diagram
V
S
= 12V, See Timing Diagram
V
S
= 12V, See Timing Diagram 2
Symbol
Min.
Typ.
Max.
Units
Conditions
Specification for packaged product only
The device is protected from damage when –5V< V
IN
< 0V. However, 0V is the recommended minimum
continuous V
IL
voltage. See the Application Information section for additional information.
See Application Information section for information on the maximum operating frequency.
2017 Microchip Technology Inc.
DS20005900A-page 5
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参数对比
与MIC44F18_11相近的元器件有:MIC44F18、MIC44F18YML、MIC44F19、MIC44F19YML、MIC44F20、MIC44F20YML。描述及对比如下:
型号 MIC44F18_11 MIC44F18 MIC44F18YML MIC44F19 MIC44F19YML MIC44F20 MIC44F20YML
描述 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8 6 A BUF OR INV BASED MOSFET DRIVER, PDSO8
功能数量 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8
表面贴装 Yes Yes Yes Yes Yes Yes YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING NO LEAD
端子位置 DUAL
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
最大工作温度 125 Cel 125 Cel 125 Cel 125 Cel 125 Cel 125 Cel -
最小工作温度 -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -40 Cel -
最大供电电压1 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V -
最小供电电压1 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V -
额定供电电压1 5 V 5 V 5 V 5 V 5 V 5 V -
导通时间 0.0350 us 0.0350 us 0.0350 us 0.0350 us 0.0350 us 0.0350 us -
关断时间 0.0350 us 0.0350 us 0.0350 us 0.0350 us 0.0350 us 0.0350 us -
加工封装描述 铅 FREE, MSOP-8 铅 FREE, MSOP-8 铅 FREE, MSOP-8 铅 FREE, MSOP-8 铅 FREE, MSOP-8 铅 FREE, MSOP-8 -
无铅 Yes Yes Yes Yes Yes Yes -
欧盟RoHS规范 Yes Yes Yes Yes Yes Yes -
状态 ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE -
工艺 BCDMOS BCDMOS BCDMOS BCDMOS BCDMOS BCDMOS -
包装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE -
包装尺寸 SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH -
端子间距 0.6500 mm 0.6500 mm 0.6500 mm 0.6500 mm 0.6500 mm 0.6500 mm -
端子涂层 MATTE 锡 MATTE 锡 MATTE 锡 MATTE 锡 MATTE 锡 MATTE 锡 -
包装材料 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 -
接口类型 缓冲或反向 场效应管管驱动器 缓冲或反向 场效应管管驱动器 缓冲或反向 场效应管管驱动器 缓冲或反向 场效应管管驱动器 缓冲或反向 场效应管管驱动器 缓冲或反向 场效应管管驱动器 -
额定输出峰值电流限制 6 A 6 A 6 A 6 A 6 A 6 A -
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