JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/252-2L Plastic-Encapsulate Transistors
MJD32C
FEATURES
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
2.COLLECTOR
3.EMITTER
1.BASE
TRANSISTOR (PNP)
TO-251
TO-252-2L
123
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
MAX
-100
-100
-5
-3
1.25
150
-65-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE(on)
f
T
V
CE
=-4 V, I
C
=-3A
I
C
=-3A, I
B
=-0.375A
V
CE
= -4V, I
C
=-3A
V
CE
=-10V , I
C
=-0.5A,f
T
=1KHz
3
10
50
-1.2
-1.8
V
V
MH
Z
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
I
CEO
I
EBO
h
FE(1)
Test
conditions
MIN
-100
-100
-5
-20
-50
-1
25
MAX
UNIT
V
V
V
μA
μA
mA
I
C
= -1mA, I
E
=0
I
C
= -30mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CE
=-100V, V
EB
=0
V
CE
= -60V, I
B
= 0
V
EB
=-5V, I
C
=0
V
CE
= -4V, I
C
=-1A
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Typical Characteristics
MJD32C
电子工程世界
嵌入式系统
