JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2L Plastic-Encapsulate Transistors
MJD42C
TRANSISTOR (PNP)
TO-251
TO-252-2L
FEATURES
Designed for general purpose amplifier and low speed
switching applications.
Lead Formed for Surface Mount Applications in Plastic
Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Monolithic Construction With Built–in Base–Emitter Resistors
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-6
1.25
150
-65-150
Units
V
V
V
A
W
℃
℃
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
1
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
V
CE
=-4V,I
C
=-3A
I
C
=-6A,I
B
=-0.6A
V
CE
=-4V,I
C
=-6A
V
CE
=-10V,I
C
=-500mA,f=1MHz
3
15
75
-1.5
-2
V
V
MHz
Test
conditions
MIN
-100
-100
-5
-50
-0.5
30
TYP
MAX
UNIT
V
V
V
μA
mA
I
C
=-100μA,I
E
=0
I
C
=-30mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-5V I
C
=0
V
CE
=-4V I
C
=-0.3A
Typical Characteristics
MJD42C
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