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MMBD4448W

0.15 A, 100 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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MMBD4448W
SURFACE MOUNT FAST SWITCHING DIODE
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3, 4 and 5)
Mechanical Data
SOT-323
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 5. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
Value
100
75
53
500
250
4.0
2.0
Unit
V
V
V
mA
mA
A
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J,
T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
0.62
Max
0.72
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 10μA
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
J
= 150°C
V
R
= 25V, T
J
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
5.
I
R
C
T
t
rr
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Green Molding Compound and does not contain Halogens or Sb
2
O
3
Fire Retardants.
MMBD4448W
Document number: DS30095 Rev. 11 - 2
1 of 3
www.diodes.com
June 2008
© Diodes Incorporated
MMBD4448W
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
0
40
80
160
120
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Derating Curve
200
250
1,000
P
D
, POWER DISSIPATION (mW)
200
100
150
10
100
50
1
0
0.1
0
0.4
0.8
1.2
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
10,000
3
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
0
20
40
60
80
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
1,000
2.5
2
100
1.5
10
1
1
0.5
0.1
0
0
30
10
20
40
50
V
R
, DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
Ordering Information
Part Number
MMBD4448W-7-F
Notes:
(Notes 5 & 6)
Case
SOT-323
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
KA3
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
2005
S
Apr
4
YM
2006
T
May
5
2007
U
Jun
6
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
MMBD4448W
Document number: DS30095 Rev. 11 - 2
2 of 3
www.diodes.com
June 2008
© Diodes Incorporated
MMBD4448W
Package Outline Dimensions
A
TOP VIEW
B C
G
H
K
M
J
D
F
L
SOT-323
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
MMBD4448W
Document number: DS30095 Rev. 11 - 2
3 of 3
www.diodes.com
June 2008
© Diodes Incorporated
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参数对比
与MMBD4448W相近的元器件有:MMBD4448W_08。描述及对比如下:
型号 MMBD4448W MMBD4448W_08
描述 0.15 A, 100 V, SILICON, SIGNAL DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE
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