MMBFJ270
P-CHANNEL SWITCH
FEATURES
• This device is designed for low level analog switching sample and
hold circuits and chopper stabilized amplifiers
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008gram
•
Marking : 270
3
G
D
1
S
2
ABSOLUTE MAXIMUM RATINGS T
J
=25
o
C
PARAMETER
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
SYMBOL
V
DG
V
GS
I
GF
T
J,
T
STG
VALUE
-30
30
50
-55 to +150
UNITS
V
V
mA
o
C
THERMAL CHARACTERISTICS
PARAMETER
Total Device Dissipaton Derate above 25
o
C
Thermal Resistance, Junciton to Ambient (Note 1)
Note 1 : Device mounted on FR-4 PCB, 70 x 60 x 1mm.
SYMBOL
P
D
R
JA
VALUE
225
1.8
556
UNITS
mW
mW/
o
C
o
C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.3-SEP.18.2009
PAGE . 1
MMBFJ270
ELECTRICAL CHARACTERISTICS T
J
=25
o
C
PARAMETER
Off Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
On Characteristics
Zero-Gate Voltage Drain Current
Forward Transferconductance
I
DSS
gfs
V
DS
= -15V,V
GS
=0
V
GS
=0V,V
DS
=15V,f=1.0kHz
-2.0
6000
-15
15000
mA
mhos
V
(BR)GSS
I
GSS
V
GS(OFF)
I
G
=1.0A,V
DS
=0
V
GS
=20V,V
DS
=0
V
DS
= -15V,I
D
= -1.0nA
30
-
0.5
-
200
2.0
V
pA
V
SYMBOL
TEST CONDITION
MIN.
MAX.
UNITS
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PAGE . 2
MMBFJ270
Common Drain-Source
-10
I
D
-DRA IN CUR REN T (mA)
Transfer Characteristics
-32
Id- DRAIN CURREN T (mA)
-8
-6
-4
-2
0
T
A
=25 C
TYP V
GS
(off)=3V
0.25V
V
GS
=0V
0.50V
0.75V
1V
1.25V
2V
3V
o
-24
V
GS
(
OFF
)=-4.5V
-55
o
C
o
25 C
o
125 C
V
DS
=-15V
-16
V
GS
(
OFF
)=-2.5V
o
-55 C
o
25 C
125
o
C
-8
0
0
-1
-2
-3
-4
0
1
2
3
4
V
DS
-DRAIN-SOURCE VOLTAGE(V)
V
GS
-GATE-SOURCE VOLTAGE (V)
Power Derating
- TRANSCONDUCTANCE (mmhos)
300
Parameter Interactions
100
50
r
DS
I
DSS
g
fs
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
1,000
500
250
P
C
[W], POWER DISSIPATION
200
150
10
5
I
DSS
, g
fs
@ V
DS
= 15V,
V
GS
= 0 PULSED
r
DS
@ -100 mV, V
GS
= 0
V
GS(off)
@ V
DS
= - 15V,
I D = - 1.0 A
100
50
100
50
fs
0
0
25
50
o
g
75
100
125
150
175
1
Tc[ C], CASE TEMPERATURE
1
V
GS (OFF)
10
2
5
10
- GATE CUTOFF VOLTAGE (V)
- NORMALIZED RESISTANCE
(
Ω )
100
50
20
10
5
2
0
0.2
0.4
0.6
0.8
1
V
GS
/V
GS(off)
- NORMALIZED GATE-SOURCE VOLTAGE (V)
1
V
GS(off)
@ 5.0V, 10 A
g
os
- OUTPUT CONDUCTANCE ( mhos)
Normalized Drain Resistance
vs Bias Voltage
Output Conductance
vs Drain Current
f = 1.0 kHz
-5.0V
-5.0V
1000
r
DS
r
DS
=
V
GS
1 -________
V
GS(off)
100
V
GS(off)
= - 4.5V
-10V
-20V
-20V
-10V
10
V
GS(off)
= - 2.5V
DS
_
1
0.01
I
D
r
_
0.1
1
- DRAIN CURRENT (mA)
_
_
10
REV.0.3-SEP.18.2009
PAGE . 3
MMBFJ270
g
fs
- TRANSCONDUCTANCE (mmhos)
Transconductance
vs Drain Current
C
is
(C
rs
) - CAPACITANCE (pF)
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
10
5
V
GS(off)
= 2.5V
25°C
V
GS(off)
= 6.0V
1
0.5
V
DG
= -15V
f = 1.0 kHz
- 55°C
25°C
125°C
10
5
C is (V
DS
= -15V)
C rs (V
DS
= -15V)
0.1
_
0.1
I
D
_
1
10
- DRAIN CURRENT (mA)
_
_
100
1
0
4
8
12
16
V
GS
- GATE-SOURCE VOLTAGE (V)
20
Noise Voltage vs Frequency
r
DS
- DRAIN "ON" RESISTANCE
(Ω)
e
n
- NOISE VOLTAGE (nV /
√
Hz)
100
50
I
D
= - 0.2 mA
Channel Resistance
vs Temperature
1000
500
V
GS(off)
= 2.5V
V
GS(off)
= 4.5V
V
GS(off)
= 8.0V
V
DS
= -100 mV
V
GS
= 0
10
5
I
D
= 5.0 mA
100
50
V
DG
= - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f
≥
1.0 kHz
1
0.01
0.1
1
10
f - FREQUENCY (kHz)
100
10
-50
0
50
100
150
o
T
A
- AMBIENT TEMPERATURE ( C)
REV.0.3-SEP.18.2009
PAGE . 4
MMBFJ270
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.3-SEP.18.2009
PAGE .
5
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