JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
MMBR901LT1，T3
FEATURES
TRANSISTOR（ NPN
）
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM
:
0.3
W（Tamb=25℃）
Collector current
I
CM
:
0.03
A
Collector-base voltage
V
(BR)CBO
: 25
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Common-emitter amplifier gain
Minimum noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
G
p
F
unless
Test
otherwise
specified）
MIN
25
15
2
0.05
50
10
3
200
dB
dB
TYP
MAX
UNIT
V
V
V
conditions
Ic= 10
μ
A， I
E
=0
Ic= 1mA， I
B
=0
I
E
=10
μ
A， I
C
=0
V
CB
=15 V , I
E
=0
V
CE
=5V, I
C
= 5mA
V
CE
=6V,I
C
= 5mA,f=1GHz
V
CE
=6V,I
C
= 5mA,f=1GHz
０．４
μ
A
DEVICE MARKING:
MMBR901LT1,T3= 7A
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
θ
0.2
E1
E
L1
e
e1
C
A1
A2
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
0.300
0°
1.800
0.550REF
0.500
8°
0.012
0°
Dimensions In Millimeters
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950TPY
2.000
0.071
0.022REF
0.020
8°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.037TPY
0.079
A
L
Dimensions In Inches
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
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