JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT2222
TRANSISTOR (NPN)
SOT–23
FEATURES
Genernal Purpose Amplifier
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
75
30
6
600
250
500
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)
*
f
T
t
d
t
r
t
s
t
f
Test
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=30V, V
BE(off)
=3V
V
EB
=3V, I
C
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=0.1mA
V
CE
=10V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=20V,I
C
=20mA, f=100MHz
V
CC
=30V, V
BE(off)
=-0.5V I
C
=150mA,
I
B1
=15mA
V
CC
=30V, I
C
=150mA, I
B1
= I
B2
=15mA
300
10
25
225
60
100
40
42
1
0.3
1.2
V
V
V
MHz
ns
ns
ns
ns
conditions
Min
75
30
6
10
10
0.1
300
Typ
Max
Unit
V
V
V
nA
nA
µA
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
MARKING
L
100–200
M1B
H
200–300
A,Oct,2010
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