MMBT2907A-AU
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
Acquire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. . (Halogen Free)
0.079(2.00)
0.008(0.20)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
60 Volt
POWER
225 mWatt
0.006(0.15)MIN.
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.0003 ounces, 0.0084 grams
Device Marking: M7A
0.070(1.80)
0.004(0.10)
0.000(0.00)
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
Value
-60
-60
-5.0
-600
Units
V
V
V
mA
V
CEO
V
CBO
V
EBO
I
C
THERMAL CHATACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Storage Temperature
Junction Temperaure
Thermal Resistance, Junction to Ambient
Symbol
Value
225
-55 to 150
-55 to 150
556
Units
mW
O
P
TOT
T
STG
T
J
R
ΘJA
C
C
O
O
C/W
Note 1 : Transistor mouted on FR-4 board 70 x 60 x 1 mm.
STAD-JUN.29.2005
PAGE . 1
MMBT2907A-AU
ELECTRICAL CHARACTERISTICS
Parameter
(T
J
=25
O
C, unless otherwise noted)
Symbol
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
BL
I
CEX
I
C
=-10mA,I
B
=0
I
C
=-10μA,I
E
=0
I
E
=-10μA,I
C
=0
V
CE
=-30V,V
EB
=-0.5V
V
CE
=-30V,V
EB
=-0.5V
V
CE
=-50V,I
E
=0
-60
-
-
V
Collector-Base Breakdown Voltage
-60
-
-
V
Emitter-Base Breakdown Voltage
-5.0
-
-
V
Base Cutoff Current
-
-
-50
nA
-
-
-50
nA
Collector Cutoff Current
-
-
-10
nA
μA
I
CBO
V
CE
=-50V,I
E
=0
T
J
=125
O
C
-
75
100
100
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-10
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
8.0
DC Current Gain
h
FE
I
C
=-0.1mA,V
CE
=-10V
I
C
=-1.0mA,V
CE
=-10V
I
C
=-10mA,V
CE
=-10V
I
C
=-150mA,V
CE
=-10V
I
C
=-500mA,V
CE
=-10V
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
V
CB
=-2V,I
C
=0,f=1MHz
I
C
=-50mA,V
CE
=-20V,
f=100MHz
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B
=-15mA
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B
=-15mA
V
CC
=-30V,V
BE
=-0.5V,
I
C
=-150mA,I
B1
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
V
CC
=-6V,I
C
=-150mA,
I
B1
=I
B2
=-15mA
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
C
CBO
C
EBO
F
T
t
on
t
d
t
r
t
off
t
s
t
f
V
Base-Emitter Saturation Voltage
V
Collector-Base Capacitance
pF
Emitter-Base Capacitance
-
-
30
pF
Current Gain-Bandwidth Product
200
-
-
MHz
Turn-On Time
-
-
45
ns
Delay Time
-
-
10
ns
Rise Time
-
-
40
ns
Turn-Off Time
-
-
100
ns
Storage Time
-
-
80
ns
Fall Time
-
-
30
ns
STAD-JUN.29.2005
PAGE . 2
MMBT2907A-AU
h
FE
, NORMALIZED CUTTENT GAIN
3.0
2.0
VCE=-1.0V
VCE=-10V
T
J
=125 C
25 C
1.0
0.7
0.5
0.3
0.2
-0.1
-55 C
O
O
O
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
-200 -300
-500
I
C
, COLLECTOR CURRENT (mA)
Fig.1-DC Cuttent Gain
-1.0
V
CE
, COLLECTOR-EMITTER
VOLTAGE (VOLTS)
-0.8
I
C
=-1.0mA
-10mA
-100mA
-500mA
-0.6
-0.4
-0.2
0
-0.005 -0.01
-0.02 -0.03
-0.05
-0.07 -0.1
-0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50
I
B
, BASE CUTTENT (mA)
Fig.2-Collector Saturation Region
300
200
100
70
50
30
20
10
7.0
5.0
500
t
r
V
CC
=-30V
I
C
/I
B
=10
O
T
J
=25 C
t, TIME (ns)
300
200
100
70
50
30
20
t
f
t, TIME (ns)
V
CC
=-30V
I
C
/I
B
=10
I
B1=
I
B2
T
J
=25
O
C
t
s
=t
s
-1/8t
f
,
td@V
BE(OFF)
=0V
2.0V
3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
-200 -300 -500
I
C
, COLLECTOR CURRENT
Fig.3-Turn-On Time
10
7.0
5.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
-200-300 -500
I
C
,COLLECTOR CURRENT (mA)
Fig.4-Turn-Off Time
STAD-JUN.29.2005
PAGE . 3
MMBT2907A-AU
10
10
f=1.0kHz
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8.0
6.0
I
C
=-1.0mA,R
S
=430
W
-500
m
A,R
S
=560
W
-50
m
A,R =2.7k
W
-100
m
A,R =1.6
W
8.0
I
C
=-50
m
A
-100
m
A
-500
m
A
-1.0mA
6.0
4.0
R
S
=OPTIMUM SOURCE RESISANCE
2.0
4.0
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
50 100
200
500 1.0k 2.0k 5.0k 10k 20k
R
S
, SOURGE RESISTANCE (OHMS)
Fig.6-Source Resistance Effects
f,FREQUENCY (kHz)
Fig.5-Frequency Effects
50k
30
f
T
, CURR ENT-G AIN-B ANDW IDTH
PROD UCT (MHz)
400
C
eb
300
200
C,CAPA CITANC E (pF)
20
10
7.0
5.0
C
cb
100
80
60
40
30
20
-1.0 -2.0
V
CE
=-20V
O
T
J
=25 C
3.0
2.0
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0-3.0 -5.0
-10
-20 -30
REVERSE VOLTAGE (VOLTS)
-5.0
-10 -20
-50 -100 -200
-500-1000
I
C
, COLLECTOR CUTTENT (mA)
Fig.8-Current-Gain-Bandwidth Product
Fig.7-Capacitances
-1.0
T
J
=25 C
O
+0.5
V
BE(sat)
@I
C
/I
B
=10
O
COEFFIC IENT (mV/ C)
-0.8
V,VOLTAGE (VOLTS)
0
R
QVC
for V
CE(sat)
-0.5
-1.0
-1.5
-2.0
-0.6
V
BE(on)
@V
CE
=-10V
-0.4
-0.2
V
CE(sat)
@ I
C
/I
B
=10
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
R
QVB
for V
BE
-50 -100-200 -500
I
C
,COLLECTOR CURRENT (mA)
Fig.9-On Voltage
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
I
C
,COLLECTOR CUTTENT (mA)
Fig.10-Temperature Coefficients
STAD-JUN.29.2005
PAGE . 4
MMBT2907A-AU
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
STAD-JUN.29.2005
PAGE . 5
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