MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage V
CE
= -40V
Collector current I
C
=-600mA
Complimentary (NPN) device: MMBT4401
40V
POWER
225mW
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight: 0.02 grams
Marking: M3A
Top View
3
Collector
1
BASE
3
COLLECTOR
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector - Emitter Voltage
Collector - Base Voltage
Emitter – Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature Range
V
CE0
V
CB0
V
EB0
I
C
P
TOT
T
J
, T
STG
-40
-40
-5.0
-600
225
-55 to 150
V
V
V
mA
mW
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Thermal Resistance , Junction to Ambient (Note 1)
R
θJ A
556
℃/W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.
MMBT4403
ELECTRICAL CHARACTERISTICS (T
J
= 25˚C, unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
MIN.
TYP.
MAX.
UNIT
Collector - Emitter Breakdown Voltage
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
V
(BR)
CE0 I
C
=-1.0mA, I
B
=0
V
(BR)
CB0 I
C
=-100uA, I
E
=0
V
(BR)
EB0 I
E
=-100uA, I
C
=0
I
BEV
I
CEX
V
CE
=-35V, V
EB
=-0.4V
V
CE
=-35V, V
EB
=-0.4V
I
C
=-0.1mA, V
CE
=-1.0V
I
C
=-1.0mA, V
CE
=-1.0V
-40
-40
-5.0
-
-
30
60
100
100
20
-
-
-0.75
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-100
-100
-
-
-
300
-
-0.4
-0.75
-0.95
-1.3
-
8.5
30
15
20
225
30
V
V
V
nA
nA
DC Current Gain
h
FE
I
C
=-10mA, V
CE
=-1.0V
I
C
=-150mA, V
CE
=-2.0V
I
C
=-500mA, V
CE
=-2.0V
I
C
=-150mA, I
B
=-15 mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-20mA, V
CE
=-10V,
f=100MHz
V
CB
=-5.0V, I
E
=0, f=1MHz
V
CB
=-0.5V, I
C
=0, f=1MHz
V
CC
=-30V, V
BE
=-2.0V,
I
C
=-150mA, I
B1
=-15mA
V
CC
=-30V, I
C
=-150mA,
I
B1
=I
B2
=15mA
-
Collector - Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
f
T
C
CBO
C
EBO
t
d
t
r
t
s
t
f
V
Base - Emitter Saturation Voltage
V
Current-Gain – Bandwidth Product
Collector - Base Capacitance
Emitter - Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
MHz
pF
pF
ns
ns
ns
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
200Ω
< 2ns
0
+2V
1.0KΩ
C
S
< 10pF
1N916
1 to 100us
Duty Cycle = 2.0%
0
1N916
+4V
<20ns
+14V
200Ω
1.0KΩ
C
S
< 10pF
-16V
10 to 100ns
Duty Cycle ~ 2.0%
-16V
Fig. 1.
Turn-On Time
Fig. 2. Turn-Off Time
MMBT4403
ELECTRICAL CHARACTERISTICS CURVES
400
350
300
hFE
250
200
150
100
0.1
1
10
100
1000
Collector Current, I
C
(mA)
T
J
= 25
˚C
T
J
= 150
˚C
V
CE
= 10V
0.900
0.800
0.700
T
J
= 25˚C
T
J
= 100
˚C
V
BE
(on)
0.600
0.500
0.400
0.300
0.200
0.1
1
10
100
1000
Collector Current, I
C
(mA)
T
J
= 100˚C
T
J
=150˚C
Fig. 3. Typical h
FE
vs Collector Current
0.500
0.450
0.400
I
C
/I
B
= 10
Fig. 4. Typical V
BE
vs Collector Current
100
C
IB
(EB)
Capacitance (pF)
0.350
V
CE
(sat)
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
T
J
= 25˚C
T
J
= 150˚C
10
C
OB
(CB)
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5. Typical V
CE
(sat) vs Collector Current
Fig. 6. Typical Capacitances vs Reverse Voltage
MMBT4403
RECOMMENTED PAD LAYOUT
ORDER INFORMATION
MMBT4403 T/R7 – 7” Reel, 3,000 Units/Reel
MMBT4403 T/R13 – 13” Reel, 10,000 Units/Reel
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and
information herein are subject to change without notice. PanJit makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose. PanJit products are not authorized
for use in life support devices or systems. PanJit does not convey any license under its patent rights or rights of
others.
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