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MMBTA05

500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 60 V, NPN, 硅, 小信号晶体管

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
60 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
Base Number Matches
1
文档预览
MMBTA05,MMBTA06,MMBTA55,MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
60~80 Volts
FEATURES
• NPN and PNP silicon, planar design
• Collector current I
C
= 100mA
In compliance with EU RoHS 2002/95/EC directives
POWER
225 mWatts
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.008 gram
• Marking :
M M B TA 0 5 = B 0 5
M M B TA 0 6 = B 0 6
M M B TA 5 5 = B 5 5
M M B TA 5 6 = B 5 6
MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r-E mi tte r Vo lta g e
C o lle c to r-B a s e Vo lta g e
E mi tte r-B a s e Vo lta g e
C o l l e c t o r C ur r e nt - C o nt i nuo us
C i r c ui t F i g ur e
S YM B O L
V
CEO
V
CBO
V
EBO
I
C
NP N
P NP
M M B TA 0 5 M M B TA 5 5 M M B TA 0 6 M M B TA 5 6 U N I T S
60
60
4 .0
500
NP N
P NP
80
80
V
V
V
mA
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
SYMBOL
P
D
JA
P
D
JA
T
J
,T
STG
MAX
225
1.8
556
300
2.4
417
-55 to 150
PNP
UNIT
mW
mW/
O
C
O
C/W
mW
mW/
O
C
O
C
C
NPN
O
1.FR-4=70 x
60
x
1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
STAD-NOV.30.2005
PAGE . 1
MMBTA05,MMBTA06,MMBTA55,MMBTA56
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted)
CHARACTERISTIC
OFF CHATACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
=1.0 mA , I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100
µ
A , I
C
=0)
Collector Cutoff Current
(V
CE
=60V , I
B
=0)
Collector Cutoff Current
(V
CB
=60V , I
E
=0)
(V
CB
=80V , I
E
=0)
ON CHATACTERISTICS
DC Current Gain
(I
C
=10mA , V
CE
=1.0V)
(I
C
=100mA , V
CE
=1.0V)
Collector-Emitter Saturation Voltage
(I
C
=100mA , I
B
=10mA)
Base-Emitter On Voltage
(I
C
=100mA , V
CE
=1.0V)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 4)
(I
C
=10mA , V
CE
=2.0V , f=100MHz)
f
T
100
-
MHz
h
FE
100
100
V
CE(
sat
)
V
BE
(on)
-
-
-
-
0.25
1.2
V
V
-
MMBTA05,MMBTA55
MMBTA06,MMBTA56
SYMBOL
MIN
MAX
UNIT
MMBTA05,MMBTA55
MMBTA06,MMBTA56
V(
BR
)
CEO
60
80
4.0
-
-
-
-
0.1
V
V(
BR
)
EBO
I
CES
V
µA
µA
I
CBO
-
-
0.1
0.1
STAD-NOV.30.2005
PAGE . 2
MMBTA05,MMBTA06,MMBTA55,MMBTA56
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300
200
V
CE
= 2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
80
60
40
C
ibo
20
T
J
= 25°C
100
70
50
30
2.0
10
8.0
6.0
C
obo
0.2
0.5
1.0
2.0
5.0
10
20
50
100
3.0
5.0 7.0 10
20
30
50
70 100
200
4.0
0.1
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
10
400
T
J
= 125°C
t
s
h FE , DC CURRENT GAIN
200
25°C
-55°C
100
80
60
40
0.5
V
CE
= 1.0 V
t
f
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
5.0 7.0 10
t
r
t
d
@ V
BE(off)
= 0.5 V
20
30
50
70 100
200 300
500
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
1.0
0.8
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.5
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
1.0
2.0
5.0
10
20
50
100
200
500
I
C
, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
STAD-NOV.30.2005
PAGE . 3
MMBTA05,MMBTA06,MMBTA55,MMBTA56
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
0.8
0.6
0.4
0.2
0
I
C
=
10 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
250 mA
I
C
=
500 mA
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0.5
R
qVB
for V
BE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0
2.0
5.0
10
20
50
100
200
500
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
STAD-NOV.30.2005
PAGE .
4
MMBTA05,MMBTA06,MMBTA55,MMBTA56
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
STAD-OCT.14.2005
PAGE . 5
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