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MMBTA05_R1_00001

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
60 V
配置
SINGLE
最小直流电流增益 (hFE)
100
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
文档预览
MMBTA05,MMBTA06,MMBTA55,MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
60~80 Volts
FEATURES
• NPN and PNP silicon, planar design
• Collector current I
C
= 500mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
POWER
225 mWatts
SOT-23
Unit
inch(mm)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking :
M M B TA 0 5 = B 0 5
M M B TA 0 6 = B 0 6
M M B TA 5 5 = B 5 5
M M B TA 5 6 = B 5 6
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r-E mi tte r Vo lta g e
C o lle c to r-B a s e Vo lta g e
E mi tte r-B a s e Vo lta g e
C o l l e c t o r C ur r e nt - C o nt i nuo us
C i r c ui t F i g ur e
S YM B O L
V
CEO
V
CBO
V
EBO
I
C
NP N
P NP
M M B TA 0 5 M M B TA 5 5 M M B TA 0 6 M M B TA 5 6 U N I T S
60
60
4 .0
500
NP N
P NP
80
80
V
V
V
mA
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
SYMBOL
P
D
JA
P
D
JA
T
J
,T
STG
MAX
225
1.8
556
300
2.4
417
-55 to 150
PNP
UNIT
mW
mW/
O
C
O
C/W
mW
mW/
O
C
O
C
C
NPN
O
1.FR-4=70 x
60
x
1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
STAD-NOV.30.2005
PAGE . 1
MMBTA05,MMBTA06,MMBTA55,MMBTA56
ELECTRICAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted)
CHARACTERISTIC
OFF CHATACTERISTICS
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
=1.0 mA , I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100
µ
A , I
C
=0)
Collector Cutoff Current
(V
CE
=60V , I
B
=0)
Collector Cutoff Current
(V
CB
=60V , I
E
=0)
(V
CB
=80V , I
E
=0)
ON CHATACTERISTICS
DC Current Gain
(I
C
=10mA , V
CE
=1.0V)
(I
C
=100mA , V
CE
=1.0V)
Collector-Emitter Saturation Voltage
(I
C
=100mA , I
B
=10mA)
Base-Emitter On Voltage
(I
C
=100mA , V
CE
=1.0V)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 4)
(I
C
=10mA , V
CE
=2.0V , f=100MHz)
f
T
100
-
MHz
h
FE
100
100
-
-
-
-
0.25
1.2
-
MMBTA05,MMBTA55
MMBTA06,MMBTA56
MMBTA05,MMBTA55
MMBTA06,MMBTA56
V(
BR
)
CEO
V(
BR
)
EBO
I
CES
I
CBO
60
80
4.0
-
-
-
-
-
-
0.1
0.1
0.1
V
V
µA
µA
SYMBOL
MIN
MAX
UNIT
V
CE(
sat
)
V
BE
(on)
V
V
STAD-NOV.30.2005
PAGE . 2
MMBTA05,MMBTA06,MMBTA55,MMBTA56
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
300
200
V
CE
= 2.0 V
T
J
= 25°C
C, CAPACITANCE (pF)
80
60
40
C
ibo
20
T
J
= 25°C
100
70
50
30
2.0
10
8.0
6.0
C
obo
0.2
0.5
1.0
2.0
5.0
10
20
50
100
3.0
5.0 7.0 10
20
30
50
70 100
200
4.0
0.1
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
300
t, TIME (ns)
200
100
70
50
30
20
10
400
T
J
= 125°C
t
s
h FE , DC CURRENT GAIN
200
25°C
-55°C
100
80
60
40
0.5
V
CE
= 1.0 V
t
f
V
CC
= 40 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
5.0 7.0 10
t
r
t
d
@ V
BE(off)
= 0.5 V
20
30
50
70 100
200 300
500
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
Figure 5. DC Current Gain
1.0
0.8
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.5
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
V
CE(sat)
@ I
C
/I
B
= 10
1.0
2.0
5.0
10
20
50
100
200
500
I
C
, COLLECTOR CURRENT (mA)
Figure 6. “ON” Voltages
STAD-NOV.30.2005
PAGE . 3
MMBTA05,MMBTA06,MMBTA55,MMBTA56
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
0.8
0.6
0.4
0.2
0
I
C
=
10 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
250 mA
I
C
=
500 mA
R
q
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
0.5
R
qVB
for V
BE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0
2.0
5.0
10
20
50
100
200
500
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Collector Saturation Region
Figure 8. Base–Emitter Temperature
Coefficient
STAD-NOV.30.2005
PAGE .
4
MMBTA05,MMBTA06,MMBTA55,MMBTA56
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
STAD-NOV.30.2005
0.078
(2.00)
PAGE . 5
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