MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
FEATURES
• PNP silicon, planar design
• High voltage (max. 300V)
• In compliance with EU RoHS 2002/95/EC directives
300 Volts
POWER
225 mWatts
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking: A92
ABSOLUTE RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
CONDITIONS
open emitter
o p e n b a se
open collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-300
-300
-5
-500
-600
-100
225
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
o
T
AMB
<25
o
C ; note1
P
TOT
T
STG
T
J
T
AMB
C
C
C
o
o
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
PAGE . 1
MMBTA92
T H E R M A L C H A R A C T E R IS T IC S
PA RA ME TE R
C O N D IT IO N S
S YM B O L
R
Θ
JA
VA L UE
500
U N IT
K /W
The r m a l r e s i s ta nc e fr o m junc ti o n to a m b i e nt no te 1
N o t e 1 : Tr a n s i s t o r m o u n t e d o n F R - 4 b o a r d 7 0 x 6 0 x 1 m m .
C H A R A C T E R IS T IC S
T
A MB
= 2 5
o
C unle s s o t he r wi s e s p e c i f i e d
PA RA ME TE R
C o lle c to r c ut- o ff c ur r e nt
E m i tte r c ut- o ff c ur r e nt
I
I
C O N D IT IO N S
E
=0 ;V
CB
=-2 0 0 V
S YM B O L
I
I
CBO
M IN .
-
-
25
40
25
-
-
-
50
MA X .
-250
-100
-
-
-
-500
-900
6
-
U N IT
nA
nA
C
=0 ;V
EB
=-3 V
EBO
D C c ur r e nt g a i n
V
C E
= - 1 0 V ;no te 2
I
C
=-1mA
I
C
=-10mA
I
C
=-30mA
I
I
C
=-2 0 mA ;I
B
=-2 mA
h
FE
-
C o l l e c t o r - e m i t t e r s a t ur a t i o n vo l t a g e
B a s e - e m i t t e r s a t ur a t i o n vo l t a g e
C o lle c to r c a p a c i ta nc e
Tr a n s i t i o n f r e q u e n c y
No te 2 : P uls e te s t : tp < 3 0 0
µ
s ;
δ
< 0 . 0 2
V
C E (S A T)
V
B E (S A T)
C
C
f
T
mV
mV
pF
MHz
C
=-2 0 mA ;I
B
=-2 mA
I
E
= i
e
= 0 ; V
C B
= - 2 0 V ;
f=1 MHz
I
C
=-1 0 mA ;V
CE
=-2 0 V ;
f=1 0 0 MHz
REV.0.2-JUL.10.2009
PAGE . 2
MMBTA92
Total power dissipation
P
tot
=
f
(
T
S
)
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20V,
f
= 100MHz
400
mW
320
280
f
T
10
3
MHz
5
P
tot
240
200
160
10
2
5
120
80
40
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
1
10
0
5
10
1
5
10
2
mA
5
10
3
Ι
C
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
10
3
P
tot max
5
P
tot
DC
t
p
D
=
T
t
p
Operating range
I
C
=
f
(
V
CEO
)
T
A
= 25°C,
D
= 0
10
3
mA
Ι
C
T
10
2
5
10
5
2
10
1
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
µ
s
10
5
1
100
µ
s
1 ms
100 ms
DC
500 ms
5
10
0
5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
-1
10
0
5
10
1
5
10
2
V
5
V
CEO
10
3
REV.0.2-JUL.10.2009
PAGE.3
MMBTA92
Collector cutoff current
I
CBO
=
f
(
T
A
)
V
CB
= 200V
10
4
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 10V
10
3
mA
Ι
CB0
nA
10
3
max
Ι
C
10
2
5
10
2
10
1
10
1
5
typ
10
0
10
0
5
10
-1
0
50
100
C
T
A
150
10
-1
0
0.5
1.0
V
V
BE
1.5
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10V
10
3
5
Gain Bandwidth Product
vs Collector Current
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
h
FE
10
5
2
10
1
5
2
100
V
CE
= 50V
80
60
V
CE
= 15V
40
20
0
1
10
20
50
100
I
C
- COLLECTOR CURRENT (mA)
10
0
-1
10
5
10
0
5
10
1
5
10
2
mA 10
3
Ι
C
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PAGE
.
4
MMBTA92
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.10.2009
PAGE .
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