首页 > 器件类别 > 分立半导体 > 晶体管

MMBTA92T/R13

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
25
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
50 MHz
文档预览
MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
FEATURES
• PNP silicon, planar design
• High voltage (max. 300V)
Lead free in comply with EU RoHS 2002/95/EC directives.
Green molding compound as per IEC61249 Std. . (Halogen Free)
0.120(3.04)
0.110(2.80)
300 Volts
POWER
225 mWatts
SOT-23
Unit
inch(mm)
0.006(0.15)MIN.
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 grams
Marking: A92
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)MAX.
ABSOLUTE RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Peak base current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
CONDITIONS
open emitter
o p e n b a se
open collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
MIN.
-
-
-
-
-
-
-
-65
-
-65
MAX.
-300
-300
-5
-500
-600
-100
225
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
o
T
AMB
<25
o
C ; note1
P
TOT
T
STG
T
J
T
AMB
C
C
C
o
o
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
0.086(2.20)
PAGE . 1
MMBTA92
T H E R M A L C H A R A C T E R IS T IC S
PA RA ME TE R
C O N D IT IO N S
S YM B O L
R
Θ
JA
VA L UE
500
U N IT
K /W
The r m a l r e s i s ta nc e fr o m junc ti o n to a m b i e nt no te 1
N o t e 1 : Tr a n s i s t o r m o u n t e d o n F R - 4 b o a r d 7 0 x 6 0 x 1 m m .
C H A R A C T E R IS T IC S
T
A MB
= 2 5
o
C unle s s o t he r wi s e s p e c i f i e d
PA RA ME TE R
C o lle c to r c ut- o ff c ur r e nt
E m i tte r c ut- o ff c ur r e nt
I
I
C O N D IT IO N S
E
=0 ;V
CB
=-2 0 0 V
S YM B O L
I
I
CBO
M IN .
-
-
25
40
25
-
-
-
50
MA X .
-250
-100
-
-
-
-500
-900
6
-
U N IT
nA
nA
C
=0 ;V
EB
=-3 V
EBO
D C c ur r e nt g a i n
V
C E
= - 1 0 V ;no te 2
I
C
=-1mA
I
C
=-10mA
I
C
=-30mA
I
I
C
=-2 0 mA ;I
B
=-2 mA
h
FE
-
C o l l e c t o r - e m i t t e r s a t ur a t i o n vo l t a g e
B a s e - e m i t t e r s a t ur a t i o n vo l t a g e
C o lle c to r c a p a c i ta nc e
Tr a n s i t i o n f r e q u e n c y
No te 2 : P uls e te s t : tp < 3 0 0
µ
s ;
δ
< 0 . 0 2
V
C E (S A T)
V
B E (S A T)
C
C
f
T
mV
mV
pF
MHz
C
=-2 0 mA ;I
B
=-2 mA
I
E
= i
e
= 0 ; V
C B
= - 2 0 V ;
f=1 MHz
I
C
=-1 0 mA ;V
CE
=-2 0 V ;
f=1 0 0 MHz
REV.0.2-JUL.10.2009
PAGE . 2
MMBTA92
Total power dissipation
P
tot
=
f
(
T
S
)
400
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20V,
f
= 100MHz
10
3
MHz
mW
320
280
f
T
5
P
tot
240
200
160
10
2
5
120
80
40
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
1
10
0
5
10
1
5
10
2
mA
5
10
3
Ι
C
Permissible pulse load
P
totmax
/
P
totDC
=
f
(
t
p
)
10
3
P
tot max
5
P
tot
DC
t
p
D
=
T
t
p
Operating range
I
C
=
f
(
V
CEO
)
T
A
= 25°C,
D
= 0
10
3
mA
Ι
C
T
10
2
5
10
5
2
10
1
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
µ
s
10
5
1
100
µ
s
1 ms
100 ms
DC
500 ms
5
10
0
5
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
10
-1
10
0
5
10
1
5
10
2
V
5
V
CEO
10
3
REV.0.2-JUL.10.2009
PAGE.3
MMBTA92
Collector cutoff current
I
CBO
=
f
(
T
A
)
V
CB
= 200V
10
4
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 10V
10
3
mA
Ι
CB0
nA
10
3
max
Ι
C
10
2
5
10
2
10
1
10
1
5
typ
10
0
10
0
5
10
-1
0
50
100
C
T
A
150
10
-1
0
0.5
1.0
V
V
BE
1.5
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 10V
10
3
5
Gain Bandwidth Product
vs Collector Current
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
h
FE
10
5
2
10
1
5
2
100
V
CE
= 50V
80
60
V
CE
= 15V
40
20
0
1
10
20
50
100
I
C
- COLLECTOR CURRENT (mA)
10
0
-1
10
5
10
0
5
10
1
5
10
2
mA 10
3
Ι
C
REV.0.2-JUL.10.2009
PAGE
.
4
MMBTA92
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.10.2009
0.078
(2.00)
PAGE .
5
查看更多>
提问+怎样提高超声波测距的稳定性和可靠性?
如题,用超声测距时遇到困扰了,测距时不稳定,怀疑测试频率高有干扰。可是如果测试频率太低,在近距运动时时实时反应性能就会比较差,(不太好解释,有种近大远小的意思,远的时候反应慢也没什么,近的时候如果反应慢可能就撞上了,大概这样的)所以想讨论下,不考虑超声模块误差、品质等因素的前提下,从通常角度来说超声测距如何控制处理,才能既稳定,又具备一定的可靠性?提问+怎样提高超声波测距的稳定性和可靠性?什么叫“测试频率”?没有这个说法。如果是指超声波本身的频率,这个不可以随便该,换能器要求什么频率...
sjtitr 综合技术交流
【好书共读——《电子硬件工程师入职图解手册》分享】_IV_电平转换
##前提回顾【好书共读《电子硬件工程师入职图解手册》分享】_I_开箱【好书共读《电子硬件工程师入职图解手册》分享】_II_套路深【好书共读《电子硬件工程师入职图解手册》分享】_III_宽温##电平转换电路第二章有个电平转换电路,算是比较常见的那种。不过我个人是经常用MOS管的版本,因为还有个体二极管可以用于反向传输,这样就可以应用在INOUT的线路上了。不过用三极管也有个好处:速率更高。通常来说三极管相对于MOS的优势就是开关速率更高。...
黑屋白巫 综合技术交流
可编程只读存储器E方串行时钟SCL 串行数据SDA连接到主控MCU后还要连接到时钟IC的SC...
可编程只读存储器E方串行时钟SCL串行数据SDA连接到主控MCU后还要连接到时钟IC的SCL和SDA,是啥意思可编程只读存储器E方串行时钟SCL串行数据SDA连接到主控MCU后还要连接到时钟IC的SC......
QWE4562009 综合技术交流