JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
MMBTH10LT1
FEATURES
1. BASE
TRANSISTOR（ NPN
）
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM
:
0.225
W（Tamb=25℃）
Collector current
I
CM
:
0.05
A
Collector-base voltage
V
(BR)CBO
: 30
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
０．４
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
（
1
）
V
CE
(sat)
V
BE
(on)
otherwise
Test
specified）
MIN
30
25
3
0.1
0.1
60
0.5
0.95
V
V
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic= 100
μ
A，
Ic= 1 mA， I
B
=0
I
E
= 10
μ
A， I
C
=0
V
CB
=25 V , I
E
=0
V
EB
= 2V ,
I
C
=0
μ
A
μ
A
V
CE
=10V, I
C
= 4mA
I
C
=4 mA, I
B
= 0.4mA
V
CE
= 10 V, I
C
= 4mA
V
CE
=10V,
I = 4mA
C
Transition frequency
f
T
f=
100MHz
650
MHz
DEVICE MARKING
MMBTH10LT1=3EM
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
θ
0.2
E1
E
L1
e
e1
C
A1
A2
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
0.300
0°
1.800
0.550REF
0.500
8°
0.012
0°
Dimensions In Millimeters
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.950TPY
2.000
0.071
0.022REF
0.020
8°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.037TPY
0.079
A
L
Dimensions In Inches
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
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