LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
•
High Q
•
Controlled and Uniform Tuning Ratio
•
Standard Capacitance Tolerance
—10%
•
Complete Typical Design Curves
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Forward power Dissipation @T
A
= 25°C
Derate above 25°C
Symbol
V
R
I
F
P
D
M V 2 1 X X MMBV21XXLT1 Unit
30
Vdc
200
mAdc
280
2.8
+150
–55 to +150
225
1.8
mW
mW/°C
°C
°C
Junction Temperature
Storage Temperature Range
T
J
T
stg
DEVICE MARKING
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
Symbol
V
(BR)R
I
R
TC
C
Min
30
—
—
Typ
—
—
280
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0µAdc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
MMBV2101~MMBV2109 –1/3
MV2101~MV2115
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C
Device
V
R
T
, Diode Capacitance
= 4.0 Vdc, f = 1.0 MHz
pF
Min
6.1
9.0
10.8
13.5
19.8
24.3
29.7
42.3
90
Nom
6.8
10
12
15
22
27
33
47
100
Max
7.5
11
13.2
16.5
24.2
29.7
36.3
51.7
110
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
Typ
450
400
400
400
350
300
200
150
100
T
R
, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Min
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.6
Typ
2.7
2.9
2.9
2.9
2.9
3.0
3.0
3.0
3.0
Max
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.3
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
MV2111
MV2115
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
4.T C
C
,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TC
C
is guaranteed by comparing C
T
at V
R
=4.0Vdc,f=1.0MHz,
T
A
= – 65
°C
with C
T
at V
R
=4.0Vdc,f=1.0MHz,T
A
= +85
°C
in the
following equation,which defines TC
C
:
C
T
(+85
°C
) – C
T
(–65
°C
)
10
6
.
TC
C
=
85+65
C
T
(25
°C
)
Accuracy limited by measurement of C
T
to±0.1pF.
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
R
, TUNING RATIO
T
R
is the ratio of C
T
measured at 2.0 Vdc divided by
C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q=
2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length ~1/16”.
~
MMBV2101~MMBV2109 –2/3
MV2101~MV2115
LESHAN RADIO COMPANY, LTD.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
TYPICAL DEVICE CHARACTERISTICS
1000
500
C T , DIODE CAPACITANCE (pF)
MV2115
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
MMBV2109LT1/MV2109
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
1.040
NORMALIZED DIODE CAPACITANCE
I R , REVERSE CURRENT (nA)
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
-75
-50
NORMALIZED TO C
T
at T
A
= 25°C
V
R
= (CURVE)
-25
0
+25
+50
+75
T
J
, JUNCTION TEMPERATURE (°C)
+100
+125
V
R
= 4.0 Vdc
V
R
= 30 Vdc
V
R
= 2.0 Vdc
100
50
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
0
5.0
10
15
20
25
30
T
A
= 75°C
T
A
= 125°C
T
A
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Normalized Diode Capacitance versus
Junction Temperature
5000
3000
2000
Q, FIGURE OF MERIT
1000
500
300
200
100
50
30
20
10
1.0
2.0
10
3.0
5.0
7.0
V
R
, REVERSE VOLTAGE (VOLTS)
T
A
= 25°C
f = 50 MHz
20
30
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
Q, FIGURE OF MERIT
5000
3000
2000
1000
500
300
200
100
50
30
20
10
10
Figure 3. Reverse Current versus Reverse Bias
Voltage
MMBV2101LT1/MV2101
MV2115
MV2115
T
A
= 25°C
V
R
= 4.0 Vdc
20
MMBV2109LT1/MV2109
100
30
50
70
f, FREQUENCY (MHz)
200
250
Figure 4. Figure of Merit versus Reverse Voltage
Figure 5. Figure of Merit versus Frequency
MMBV2101~MMBV2109 –3/3
MV2101~MV2115
ARM技术
