MMDT2222ATB6
DUAL SURFACE MOUNT NPN TRANSISTORS
This device contains two electrically-isolated 2N2222A NPN transistors.
The two transistors have well matched hFE and are encapsulated in an
ultra-small SOT-563 package. This device is ideal for portable
applications where board space is at a premium.
FEATURES
Electrically Isolated Dual NPN Switching Transistor
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. . (Halogen Free)
6
5
4
APPLICATIONS
General Purpose Amplifier Applications
Hand-Held Computers, PDAs
Device Marking Code:
TU
1
2
3
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Value
75
40
6.0
600
200
-55 to +150
-55 to +150
Units
V
V
V
mA
mW
°C
°C
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R
thja
Value
625
Units
°C/W
Note 1. FR-4 board
60
x
70
x
1mm
with minimum recommended pad layout
May 30,2016REV.01
Page 1
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MMDT2222ATB6
ELECTRICAL CHARACTERISTICS (Each Transistor)
T
J
= 25°C Unless otherwise noted
Parameter
Symbol
Conditions
Min
40
75
6.0
-
-
35
50
75
50
100
40
35
-
-
0.6
-
300
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
20
-
-
-
-
300
-
-
0.3
1.0
1.2
2.0
-
8.0
25
10
25
225
60
V
V
V
MHz
pF
pF
ns
ns
ns
ns
-
Units
V
V
V
nA
nA
Collector-Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
= 10uA
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
V
(BR)EBO
I
E
= 10uA
I
CEX
I
BL
V
CE
= 60V, V
EB
= 3.0V
V
CE
= 60V, V
EB
3.0V
=
I
C
= 0.1mA, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
DC Current Gain (Note 2)
h
FE
I
C
=10mA, V
CE
=10V, T
J
=-55C
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation
Voltage (Note 2)
Base-Emitter Saturation Voltage
(Note 2)
Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(SAT)
V
BE(SAT)
f
T
C
CBO
C
EBO
t
d
t
r
t
s
t
f
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 20V, I
C
= 20mA
f = 100MHz
V
CB
= 10V, f =1.0MHz
V
EB
= 0.5V, f =1.0MHz
V
CC
= 30V, I
C
=150mA
V
BE
(off) = -0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
=150mA
I
B1
= I
B2
= 15mA
Note 2. Short duration test pulse used to minimize self-heating
May 30,2016REV.01
Page 2
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MMDT2222ATB6
CHARACTERISTICS CURVES (Each Transistor)
T
J
= 25°C Unless otherwise noted
350
300
250
T
J
= 100° C
0.8
T
J
= 150° C
0.7
0.6
0.5
V
BE
(on)
T
J
= 100°
C
T
J
= 25° C
200
h
FE
150
100
50
0
0.1
1
V
CE
= 10V
T
J
= 25° C
0.4
0.3
0.2
0.1
0.0
T
J
= 150°
C
V
CE
= 10V
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 1. hFE vs. Ic
1.2
T
J
= 150 °C
Fig. 2. VBE vs. Ic
500
450
400
350
V
CE
(sat) (mV)
I
C
/I
B
= 10
1.0
0.8
V
BE
(sat) (V)
I
C
/I
B
= 10
300
250
200
150
100
50
0
0.1
T
J
= 25 °C
0.6
T
J
= 150 °C
0.4
0.2
T
J
= 25 °C
T
J
= 100 °C
0.0
1
10
100
1000
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. VCE(sat) vs. Ic
100
Fig. 4. VBE(sat) vs. Ic
f=1 MHz
Capacitance (pF
C
IB
(EB )
10
C
OB
(CB )
1
0.1
1
10
100
Reverse Voltage, V
R
(V)
Fig. 5. Capacitances
May 30,2016REV.01
Page 3
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MMDT2222ATB6
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
SOT-563
0.011(0.27)
0.006(0.17)
Unit
：
inch(mm)
Unit
：
inch(mm)
0.044(1.10)
0.035(0.90)
0.052(1.30)
0.043(1.10)
0.067(1.70)
0.059(1.50)
0.067(1.70)
0.059(1.50)
0.024(0.60)
0.019(0.50)
0.007(0.17)
0.002(0.07)
0.012(0.30)
0.004(0.10)
ORDERING INFORMATION
MMDT2222ATB6 T/R7 -
4,000
units per 7 inch reel
MMDT2222ATB6 T/R13 -10,000 units per 13 inch reel
C
May 30,2016REV.01
Page 4
www.panjit.com
MMDT2222ATB6
Part No_packing code_Version
MMDT2222ATB6 _R1_00002
MMDT2222ATB6 _R2_00002
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
May 30,2016REV.01
PAGE . 5
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