MMDT2227A
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
VOLTAGE
FEATURES
60 Volts
POWER
200 mW
• Complementary Pair
• Epitaxial Planar Die Construction
• Ultra-Small Surface Mount Package
• One MMDT2222A-Type NPN
One MMDT2907A-Type PNP
• Ideal for Low Power Amplification and Switching
• Also Available in Lead Free Version
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Approx Weight: 0.006 grams
• Device Marking : S0A
6
5
4
1
2
3
Fig.55
Maximum Ratings MMDT2222A Section @ T
A
=25
O
C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operation and Storage and Temperature Range
Symbol
MMDT2222A
75
40
6.0
600
225
625
-55 to +150
Units
V
V
V
mA
mW
O
V
C BO
V
C EO
V
EBO
I
C
P
d
R
Θ
JA
T
J
,T
STG
C/W
O
C
STAD-APR.25.2007
PAGE . 1
MMDT2227A
Maximum Ratings MMDT2907A Section @ T
A
=25
O
C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operation and Storage and Temperature Range
Symbol
MMDT2907A
-60
-60
-5.0
-600
200
625
-55 to +150
Units
V
V
V
mA
mW
O
V
C BO
V
C EO
V
EBO
I
C
P
d
R
Θ
JA
T
J
,T
STG
C/W
O
C
STAD-APR.25.2007
PAGE . 2
MMDT2227A
Electrical Characteristics, MMDT222A Section @ T
A
=25
O
C unless otherwise specified
Characteristic
Symbol
Min.
Max.
Unit
Test Condition
OFF CHARACTERISTICS(Note 2)
I
C
=-10
µ
A,I
E
=0
I
C
=10mA,I
B
=0
I
E
=-10
µ
A,I
C
=0
V
CB
=60V,I
E
=0
V
CB
=60V,I
E
=0,T
A
=150
O
C
V
CE
=60V,V
EB(OFF)
=3.0V
V
EB
=3.0V,I
C
=0
V
CE
=60V,V
EB(OFF)
=3.0V
Collector-Base Breakdown Voltage
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
I
CBO
I
CEX
I
EBO
I
BL
75
-
V
Collector-Emitter Breakdown Voltage
40
-
V
Emitter-Base Breakdown Voltage
6.0
-
V
nA
µA
nA
Collector Cutoff Current
-
10
Collector Cutoff Current
-
10
Emitter Cutoff Current
-
100
nA
Base Cutoff Current
-
20
nA
ON CHARACTERISTICS(Note 2)
35
50
75
100
40
50
50
-
-
0.6
-
-
-
-
300
-
-
-
0.3
1.0
1.2
2.0
I
C
=100
µ
A,V
CE
=10V
I
C
=1.0mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
I
C
=150mA,V
CE
=10V
I
C
=500mA,V
CE
=10V
I
C
=10mA,V
CE
=10V,T
A
=-55
O
C
I
C
=150mA,V
CE
=1.0V
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
DC Current Gain
h
FE
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
V
Base-Emitter Saturation Voltage
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
C
i bo
f
T
NF
-
8
pF
V
CB
=10V,f=1.0MHz,I
E
=0
V
EB
=0.5V,f=1.0MHz,I
C
=0
V
CE
=-20V,I
C
=20mA,
f=100MHz
V
CE
=10V,I
C
=100
µ
A,
R
S
=1.0k
Ω
,f=1.0KHz
Input Capacitance
-
25
pF
Current Gain-Bandwidth Product
300
-
MHz
Noise Figure
-
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
t
d
t
r
-
10
ns
V
CC
=30V,I
C
=150mA,
V
BE(OFF)
=-0.5V,I
B1
=15mA
Rise Time
-
25
ns
STAD-APR.25.2007
PAGE . 3
MMDT2227A
Electrical Characteristics, MMDT2907A Section @ T
A
=25
O
C unless otherwise specified
Characteristic
Symbol
Min.
Max.
Unit
Test Condition
OFF CHARACTERISTICS(Note 2)
I
C
=-10
µ
A,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10
µ
A,I
C
=0
V
CB
=-50V,I
E
=0
V
CB
=-50V,I
E
=0,T
A
=125
O
C
V
CE
=-30V,V
EB(OFF)
=-0.5V
V
CE
=-30V,V
EB(OFF)
=-0.5V
Collector-Base Breakdown Voltage
V
(BR)
CBO
V
(BR)
CEO
V
(BR)
EBO
I
CBO
I
CEX
I
BL
-60
-
V
Collector-Emitter Breakdown Voltage
-60
-
V
Emitter-Base Breakdown Voltage
-5.0
-
V
nA
µA
nA
Collector Cutoff Current
-
-10
Collector Cutoff Current
-
-50
Base Cutoff Current
-
-50
nA
ON CHARACTERISTICS(Note 2)
75
100
100
100
50
-
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
I
C
=-100
µ
A,V
CE
=-10V
I
C
=-1.0mA,V
CE
=-10V
I
C
=-10mA,V
CE
=-10V
I
C
=-150mA,V
CE
=-10V
I
C
=-500mA,V
CE
=-10V
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
DC Current Gain
h
FE
-
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
BE(SAT)
V
Base-Emitter Saturation Voltage
-
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
C
i bo
f
T
-
8
pF
V
CB
=-10V,f=1.0MHz,I
E
=0
V
EB
=-2.0V,f=1.0MHz,I
C
=0
V
CE
=-20V,I
C
=-50mA,
f=100MHz
Input Capacitance
-
30
pF
Current Gain-Bandwidth Product
200
-
MHz
SWITCHING CHARACTERISTICS
I
C
=-150mA,V
CC
=-30V,
I
B1
=-15mA
Turn-On Time
t
on
t
d
t
r
-
45
ns
Delay Time
-
10
ns
V
CC
=-30V,I
C
=-150mA,
I
B1
=-15mA
Rise Time
-
40
ns
STAD-APR.25.2007
PAGE . 4
MMDT2227A
30
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I
C
= 300mA
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
20
10
Cibo
CAPACITANCE (pF)
5.0
Cobo
1.0
0.1
1.0
10
50
REVERSE VOLTS (V)
Fig. 1 (2222A) Typical Capacitance
I
B
BASE CURRENT (mA)
Fig. 2 (2222A) Typical Collector Saturation Region
30
20
C, CAPACITANCE (pF)
Cibo
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 30mA
I
C
= 300mA
10
5.0
Cobo
1.0
-0.1
-1.0
-10
-30
0.01
0.1
1
10
100
REVERSE VOLTS (V)
Fig. 3 (2907A) Typical Capacitance
I
B
BASE CURRENT (mA)
Fig. 4 (2907A) Typical Collector Saturation Region
STAD-APR.25.2007
PAGE . 5
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