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MMSTA06

500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 80 V, NPN, 硅, 小信号晶体管

器件类别：半导体    分立半导体   

厂商名称：Diodes

厂商官网：http://www.diodes.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
最大集电极电流
0.5000 A
最大集电极发射极电压
80 V
端子数量
3
加工封装描述
GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
each_compli
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
Active
结构
SINGLE
最小直流放大倍数
100
jesd_30_code
R-PDSO-G3
jesd_609_code
e3
moisture_sensitivity_level
1
元件数量
1
最大工作温度
150 Cel
包装材料
PLASTIC/EPOXY
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
eak_reflow_temperature__cel_
260
larity_channel_type
NPN
wer_dissipation_max__abs_
0.2000 W
qualification_status
COMMERCIAL
sub_category
Other Transistors
表面贴装
YES
端子涂层
MATTE TIN
端子形式
GULL WING
端子位置
DUAL
ime_peak_reflow_temperature_max__s_
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
额定交叉频率
100 MHz
文档预览
MMSTA05/MMSTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA55/MMSTA56)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Notes 3 and 4)
A
C
SOT-323
Dim
A
B C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
B
C
D
E
G
M
B
G
E
0.65 Nominal
Mechanical Data
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
MMSTA05 Marking K1H, K1G (See Page 3)
MMSTA06 Marking K1G (See Page 3)
Order & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
K
H
H
J
K
L
M
J
•
•
•
•
•
•
•
•
D
E
L
C
α
All Dimensions in mm
B
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
MMSTA05
60
60
MMSTA06
80
80
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
4.0
500
200
625
-55 to +150
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
MMSTA05
MMSTA06
MMSTA05
MMSTA06
MMSTA05
MMSTA06
MMSTA05
MMSTA06
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
Min
60
80
60
80
4.0
⎯
⎯
Max
⎯
⎯
⎯
100
100
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, V
CE
= 1.0V
V
CE
= 2.0V, I
C
= 10mA, f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
100
⎯
⎯
100
⎯
0.25
1.2
⎯
⎯
V
V
MHz
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Short duration pulse test used to minimize self-heating effect.
DS30168 Rev. 9 - 2
1 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
200
10
I
CBO
, COLLECTOR-BASE CURRENT (nA)
0
25
175
200
P
D
, POWER DISSIPATION (mW)
150
1
100
0.1
50
0
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
50
75
100
125
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature
0.500
0.450
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.400
0.350
0.300
T
A
= 25°C
I
C
= 10
I
B
0.01
25
2.0
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1
0.1
10
100
I
B
, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
0.01
I
C
= 1mA
I
C
= 100mA
I
C
= 10mA
I
C
= 30mA
0.250
0.200
0.150
0.100
0.050
T
A
= -50°C
T
A
= 150°C
0
1,000
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
1
10,000
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
10
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, DC Current Gain vs. Collector Current
V
CE
= 5V
h
FE
, DC CURRENT GAIN
1,000
100
10
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6, Base Emitter Voltage vs. Collector Current
DS30168 Rev. 9 - 2
2 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
1,000
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 7, Gain Bandwidth Product vs Collector Current
Ordering Information
(Note 4 and 6)
Device
MMSTA05-7-F
MMSTA06-7-F
Notes:
Packaging
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1x
K1x = Product Type Marking Code, ex: K1H = MMSTA05
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
Code
Month
Code
J
Jan
1
YM
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30168 Rev. 9 - 2
3 of 3
www.diodes.com
MMSTA05/MMSTA06
© Diodes Incorporated
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参数对比
与MMSTA06相近的元器件有：MMSTA05、MMSTA05_2。描述及对比如下：
型号 MMSTA06 MMSTA05 MMSTA05_2
描述 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
最大集电极电流 0.5000 A 0.5000 A 0.5000 A
最大集电极发射极电压 80 V 80 V 80 V
端子数量 3 3 3
加工封装描述 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 GREEN, ULTRA SMALL, PLASTIC PACKAGE-3
each_compli Yes Yes Yes
欧盟RoHS规范 Yes Yes Yes
中国RoHS规范 Yes Yes Yes
状态 Active Active Active
结构 SINGLE SINGLE SINGLE
最小直流放大倍数 100 100 100
jesd_30_code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
jesd_609_code e3 e3 e3
moisture_sensitivity_level 1 1 1
元件数量 1 1 1
最大工作温度 150 Cel 150 Cel 150 Cel
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 260 260 260
larity_channel_type NPN NPN NPN
wer_dissipation_max__abs_ 0.2000 W 0.2000 W 0.2000 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors Other Transistors
表面贴装 YES YES YES
端子涂层 MATTE TIN MATTE TIN MATTE TIN
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ 40 40 40
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
额定交叉频率 100 MHz 100 MHz 100 MHz
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