• Integrated matching, DC Blocks and bias circuits
• Excellent Active Directivity
• Operates over 2.8-5V
Product Overview
MNA-4A-D+ is a wideband PHEMT based MMIC amplifier die with high active Directivity. MNA integrates
the entire matching network and majority of the bias circuit inside the die, reducing the need for complicated
external circuits. This approach makes the MNA amplifier die extremely straightforward to use. This design
operates on a single 2.8 to 5V supply, is well matched for 50Ω.
Key Features
Feature
Excellent Active Directivity
(Isolation- Gain)
19-35 dB
Integrates DC blocks and RF choke
Single +2.8 to +5V operation
Advantages
Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits
Minimizes external components, component count and circuit area.
Amplifier can be used at low voltage such as +3V or standard +5V.
+5V operation results in higher P1dB and OIP3.
Enables the user to integrate the amplifier directly into hybrids.
Unpackaged die
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 1 of 7
High Directivity
50Ω
Monolithic Amplifier Die
0.5 to 4.5 GHz
Product Features
• Choice of supply voltage, +2.8V to +5V
• Internal DC blocking at RF input and output
• High directivity, 19-32 dB typ.
• Output power, up to +19 dBm typ.
MNA-4A-D+
+RoHS Compliant
Typical Applications
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
• Buffer amplifier
• Cellular infrastructure
• Communications satellite
• Defense
Ordering Information: Refer to Last Page
General Description
MNA-4A-D+ is a wideband PHEMT based MMIC amplifier die with high active Directivity. MNA integrates
the entire matching network and majority of the bias circuit inside the die, reducing the need for complicated
external circuits. This approach makes the MNA amplifier die extremely straightforward to use. This design
operates on a single +2.8 to +5V supply, is well matched for 50Ω.
Simplified Schematic and Pad description
Pad
RF IN
RF-OUT
DC1 & DC2
RF input pad.
RF output pad
Description
DC Supply pad. Connect DC2 to DC1 via 33.2Ω resistor
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
REV. OR
M157112
MNA-4A-D+
MCL NY
160801
Page 2 of 7
Monolithic Amplifier Die
Electrical Specifications
1
at 25°C
Parameter
Frequency Range
Gain
MNA-4A-D+
Condition (GHz)
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
0.5
1.0
2.0
2.5
3.5
4.5
Vs=5V
Min.
0.5
Typ.
16.0
17.8
17.8
17.0
13.9
9.8
5.2
14.6
31.1
29.8
15.6
7.8
12.9
25.9
15.6
15.0
17.7
16.7
18.7
18.6
17.2
16.8
15.2
13.5
30.9
30.8
28.5
27.9
26.3
25.0
4.9
4.4
4.5
4.5
4.7
5.5
31.8
26.2
19.4
19.0
20.8
23.9
75.1
35
0.001
(3)
50
Max.
4.5
Vs=2.8V
Typ.
0.5-4.5
14.2
15.4
14.9
14.2
11.6
8.1
5.5
14.5
26.9
30.4
15.4
8.0
12.1
12.7
11.2
11.3
12.6
11.8
10.7
11.8
12.0
12.1
11.9
10.8
22.8
23.5
23.4
23.2
22.4
21.3
5.0
4.5
4.6
4.6
4.9
5.8
35.3
26.2
20.5
19.7
20.7
23.5
70.6
17
0.003
(4)
50
Units
GHz
dB
Input Return Loss
dB
Output Return Loss
dB
Output Power at P1dB
dBm
Output IP3
dBm
Noise Figure (dB)
dB
Directivity
(Isolation-Gain)
dB
DC Current
Device Current Variation vs. Temperature
(2)
Device Current Variation vs Voltage
Thermal resistance at 85°C (Junction to Lead)
94.0
mA
μA/°C
mA/mV
°C/W
1. Measured on Mini-Circuits characterization test board. Die packaged in 3x3 mm MCLP package and soldered on test board TB-186+
2. (Current at 85°C -Current at -45°C)/130
3. (Current at 5.25V-Current at 3.9V)/1.35
4. (Current at 3.9V-Current at 2.66V)/1.24
Absolute Maximum Ratings
1,5
Parameter
Operating Temperature
DC Voltage
Power Dissipation
Input Power
Ratings
-40°C to 85°C
7V at DC1 (DC2 connected to DC1 via 33.2Ω)
1V at RF IN & RF OUT
500 mW
+13 dBm (continuous operation)
+24 dBm (5 minutes max)
5. Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
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P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 3 of 7
Monolithic Amplifier Die
Characterization Circuit
MNA-4A-D+
Fig 1.
Block Diagram of Test Circuit used for characterization. (Die packaged in 3x3 mm MCLP package and soldered on Mini-
Circuits Characterization test board TB-186+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and
noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain and Return loss: Pin= -25dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
Recommended Application Circuit
Fig 2.
Test Board includes case, connectors, and components soldered to PCB
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Mini-Circuits
®
Page 4 of 7
Monolithic Amplifier Die
Die Layout
MNA-4A-D+
Bonding Pad Position
(Dimensions in μm, Typical)
Fig 3. Die Layout
Critical Dimensions
Parameter
Die Thickness, μm
Die Width, μm
Die Length, μm
Bond Pad Size (RF In, RF Out, DC), μm
Bond Pad Size (Ground pad), μm
Values
100
970
1015
80 x 80
80 x 340
Fig 4. Bonding Pad Positions
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