型号
  • 型号
  • 关键词
首页 > 器件类别 > 模拟混合信号IC > 触发装置

MP02TT800-14-W12

Silicon Controlled Rectifier, 510A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MP02-W12, 7 PIN

器件类别：模拟混合信号IC    触发装置   

厂商名称：Dynex

厂商官网：http://www.dynexsemi.com/

器件标准：  

下载文档
参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
FLANGE MOUNT, R-XUFM-X7
针数
7
Reach Compliance Code
unknown
外壳连接
ISOLATED
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流
150 mA
JESD-30 代码
R-XUFM-X7
元件数量
2
端子数量
7
封装主体材料
UNSPECIFIED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
510 A
断态重复峰值电压
1400 V
重复峰值反向电压
1400 V
表面贴装
NO
端子形式
UNSPECIFIED
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
Base Number Matches
1
文档预览
MP02TT800
MP02TT800
Dual Thyristor Water Cooled Welding Module
Preliminary Information
DS5435-1.1 June 2001
FEATURES
s
s
s
s
s
s
Dual Device Module
Electrically Isolated Package
Pressure Contact Construction
International Standard Footprint
Alumina (Non Toxic) Isolation Medium
Integral Water Cooled Heatsink
KEY PARAMETERS
1600V
V
DRM
510A
I
LINE(cont.)
805A
I
LINE(20cy./50%)
6800A
I
TSM(per arm)
3000V
V
isol
G
1
K
1
K
2
G
2
1
2
3
APPLICATIONS
s
Welding
Fig. 1 Circuit diagram
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
1600
1500
1400
1300
Conditions
K2 G2
MP02TT800-16
MP02TT800-15
MP02TT800-14
MP02TT800-13
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 30mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
1
2
3
K1 G1
Lower voltage grades available
ORDERING INFORMATION
Order As:
MP02TT800-XX W12
MP02TT800-XX W13
1/4 - 18NPT
1/4 BSP connection
Outline type code:
MP02 W12/W13
XX shown in the part number about represents V
DRM
/100
selection required, e.g. MP02TT800-14-W12
Note: When ordering, please use the whole part number.
Auxiliary gate and cathode leads can be ordered separately.
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
1/8
www.dynexsemi.com
MP02TT800
ABSOLUTE MAXIMUM CURRENT RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
I
LINE
Parameter
Max. controllable RMS line
current - single phase
Continuous 50/60Hz
4.5 Ltr/min
20 cycles, 50% duty cycle
4.5 Ltr/min
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
T
water (in)
= 25˚C
T
water (in)
= 40˚C
T
water (in)
= 25˚C
T
water (in)
= 40˚C
10ms half sine, T
j
= 125˚C
V
R
= 0
10ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
510
450
920
805
6.8
0.231 x 10
6
5.5
0.15 x 10
6
3000
Units
A
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to water
(per thyristor)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
-
Weight (nominal)
-
Reverse (blocking)
-
Min.
-
-
-
-
–40
5 (44)
-
-
Max.
0.3
0.32
0.33
125
125
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
Nm (lb.ins)
5 (44) Nm (lb.ins)
1200
g
2/8
www.dynexsemi.com
MP02TT800
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 200A, gate source 10V, 5Ω
t
r
= 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
Threshold voltage
On-state slope resistance
At T
vj
= 125˚C
At T
vj
= 125˚C
-
-
0.98
0.75
V
mΩ
Min.
-
-
-
Max.
30
1000
500
Units
mA
V/µs
A/µs
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
3/8
www.dynexsemi.com
MP02TT800
2000
Measured under pulse conditions
20
1500
Peak half sine wave on-state current - (kA)
Instantaneous on-state current, I
T
- (A)
15
180
I
2
t value - A
2
s x 10
3
1000
T
j
= 125˚C
10
I
2
t
140
500
5
100
0
0.5
0
1.0
1.5
2.0
2.5
1
ms
10
1
2 3 45
10
60
20 30 50
Instantaneous on-state voltage, V
T
- (V)
cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
100
Thermal resistance (junction to water). R
th(j-w)
- (ßC/W)
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125˚C)
1.0
Gate trigger voltage, V
GT
- (V)
Pulse Pulse Frequency Table gives pulse power P
GM
in watts
Hz
Width
µs 50 100 400
100W
75W
V
FGM
20 100 100 100
50W
25 100 100 100
100 100 100 100
10W
500 100 100 25
5W
10
1ms 100 50
-
10ms 10
-
-
T
j
= 25˚C
0.1
T
j
= -40˚C
T
j
= 125˚C
1.0
U
V
GD
p
r
pe
lim
9%
t9
i
0.01
Lo
w
er
li m
it
1%
0.1
0.001
0.01
0.1
1.0
10
I
FGM
0.001
0.001
0.01
0.1
Gate trigger current, I
GT
- (A)
1
Time - (s)
10
100
1000
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
4/8
www.dynexsemi.com
MP02TT800
3000
T
water
= 25˚C
Number of cycles
1
3
5
10
20
30
50
100
3000
T
water
= 30˚C
Number of cycles
1
3
5
10
20
30
50
100
2500
2500
RMS current, I
T(RMS)
- (A)
RMS current, I
T(RMS)
- (A)
2000
2000
1500
1500
1000
1000
500
500
1
1
10
Duty cycles - (%)
100
1
1
10
Duty cycles - (%)
100
Fig. 7 Single phase welding rating @T
water
= 25˚C
3000
T
water
= 40˚C
Number of cycles
1
3
5
10
20
30
50
100
Fig. 8 Single phase welding rating @T
water
= 30˚C
3000
T
water
= 50˚C
Number of cycles
1
3
5
10
20
30
50
100
2500
2500
RMS current, I
T(RMS)
- (A)
2000
RMS current, I
T(RMS)
- (A)
2000
1500
1500
1000
1000
500
500
1
1
10
Duty cycles - (%)
100
1
1
10
Duty cycles - (%)
100
Fig. 9 Single phase welding rating @T
water
= 40˚C
Fig. 10 Single phase welding rating @T
water
= 50˚C
5/8
www.dynexsemi.com
查看更多>
参数对比
与MP02TT800-14-W12相近的元器件有：MP02TT800-13-W12、MP02TT800-13-W13、MP02TT800-14-W13、MP02TT800-15-W12、MP02TT800-16-W12、MP02TT800-15-W13、MP02TT800-16-W13。描述及对比如下：
型号 MP02TT800-14-W12 MP02TT800-13-W12 MP02TT800-13-W13 MP02TT800-14-W13 MP02TT800-15-W12 MP02TT800-16-W12 MP02TT800-15-W13 MP02TT800-16-W13
描述 Silicon Controlled Rectifier, 510A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MP02-W12, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 2 Element, MP02-W12, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1300V V(DRM), 1300V V(RRM), 2 Element, MP02-W13, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MP02-W13, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1500V V(DRM), 1500V V(RRM), 2 Element, MP02-W12, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, MP02-W12, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1500V V(DRM), 1500V V(RRM), 2 Element, MP02-W13, 7 PIN Silicon Controlled Rectifier, 510A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, MP02-W13, 7 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
包装说明 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-XUFM-X7
针数 7 7 7 7 7 7 7 7
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大直流栅极触发电流 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA
JESD-30 代码 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7 R-XUFM-X7
元件数量 2 2 2 2 2 2 2 2
端子数量 7 7 7 7 7 7 7 7
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大均方根通态电流 510 A 510 A 510 A 510 A 510 A 510 A 510 A 510 A
断态重复峰值电压 1400 V 1300 V 1300 V 1400 V 1500 V 1600 V 1500 V 1600 V
重复峰值反向电压 1400 V 1300 V 1300 V 1400 V 1500 V 1600 V 1500 V 1600 V
表面贴装 NO NO NO NO NO NO NO NO
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
触发设备类型 SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 - -
msp430f5529捕获加串口源码
#include msp430f5529.h #define u...
fish001 微控制器 MCU
GPS小知识
本帖最后由 jameswangsynnex 于 2015-3-3 20:03 编辑 GPS小知...
menglong 移动便携
好书推荐《嵌入式linux应用程序开发标准教程》
分享一本书《嵌入式linux应用程序开发标准教程》 资料来源于网络 好书推荐《嵌入式linux应...
小麦克 Linux与安卓
如何着手电源设计
从不同方面深入介绍降压、升压和降压-升压拓扑结构。 降压转换器 图1是非同步降压转换...
qwqwqw2088 模拟与混合信号
arrow soc kit bsp for opencl <------------ 长标题的典范
有需要的童鞋随便下哈，不用跟哥客气，哥的小名唤作雷锋 @zhaoyongke 实在抱歉，之前没帮你找...
lelee007 Altera SoC
测评汇总：《CMake构建实战：项目开发卷》
活动详情： 【《CMake构建实战：项目开发卷》】 更新至 2024-11-05 测评报告汇总...
EEWORLD社区 测评中心专版
热门器件
热门资源推荐
10-安全配置指导-整本手册 DSP编程,c语言和matlab常用算法 CSP封装技术,最新IC封装技术. 基于CPLD的MIDI音乐播放器的设计 数字电视之基本知识 基于FPGA的遥测解调系统设计 基于matlab的车牌识别系统项目报告 交流斩波功率变换器及其控制技术研究 (金楠，崔光照著) LM3S811原理图 期刊论文：显微图像的光学薄膜缺陷密度统计
一直对整流桥的这些参数模糊 问一个低级问题，反馈电阻为什么能使运放进入线性区 简易稳压直流电源电路分析 三级管做达林顿连接使用 NTC电阻，你仔细研究过吗？ 运放 哪种正弦波电路最为稳定可靠？ 三极管的Datasheet这样解读，从此根治继电器罢工！ 求传感器推荐 如何构建浮地回路
简洁的过零调功器电路设计与分析 单稳态控制电路设计与分析 光控电路设计与分析 永不缺相启动运行的电动机控制电路 IGBT模块通过控制门极阻断过电流 MT3608构成3.7V转12V的升压电路图 运算放大器IC741的基本工作原理及在电路中的实现方式 比较常见的功率整流器和滤波电路 一个简单的红外耳机电路 基于TDA1554的立体声放大器电路
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消