JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
MPS2222A
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR (NPN )
FEATURE
Complementary NPN Type available (MPS2907A)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
40
6
600
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
*
*
Test
conditions
Min
75
40
6
Max
Unit
V
V
V
I
C
= 10uA , I
E
=0
I
C
= 10mA ,
I
B
=0
I
E
= 10uA, I
C
=0
V
CB
= 60V, I
E
=0
V
CE
= 60V,V
EB(Off)
=3V
V
EB
= 3 V, I
C
=0
V
CE
=10V,I
C
= 150mA
V
CE
=10V,I
C
= 0.1mA
V
CE
=10V, I
C
= 500mA
I
C
= 500mA, I
B
=50mA
I
C
= 150mA, I
B
=15mA
I
C
= 500mA, I
B
= 50mA
V
CC
=30V, V
EB(Off)
=-0.5V,
I
C
=150mA,I
B1
=15mA
V
CC
=30V,Ic=150mA,I
B1
=I
B2
=15mA
V
CE
=20V, I
C
=20mA, f=100MHz
*
10
10
100
100
40
42
0.6
0.3
1.2
10
25
225
60
300
300
nA
nA
nA
V
CE(sat)(1) *
V
CE(sat)(2)
V
BE(sat)
t
d
t
r
t
S
t
f
*
V
V
V
nS
nS
nS
nS
MHz
f
T
pulse test
CLASSIFICATION OF h
FE(1)
Rank
Range
L
100-200
H
200-300
A,June,2011
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