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MR1A16AVMA35R

Memory Circuit,

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厂商名称:Everspin Technologies

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Everspin Technologies
包装说明
LFBGA,
Reach Compliance Code
unknown
JESD-30 代码
S-PBGA-B48
长度
8 mm
内存密度
2097152 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
功能数量
1
端子数量
48
字数
131072 words
字数代码
128000
工作模式
ASYNCHRONOUS
最高工作温度
105 °C
最低工作温度
-40 °C
组织
128KX16
封装主体材料
PLASTIC/EPOXY
封装代码
LFBGA
封装形状
SQUARE
封装形式
GRID ARRAY, LOW PROFILE, FINE PITCH
座面最大高度
1.35 mm
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.75 mm
端子位置
BOTTOM
宽度
8 mm
文档预览
MR1A16A
FEATURES
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM control-
lers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
128K x 16 MRAM Memory
44-pin TSOP2
48-ball BGA
INTRODUCTION
RoHS
The
MR1A16A
is a 2,097,152-bit magnetoresistive random access memory (MRAM) device orga-
nized as 131,072 words of 16 bits. The
MR1A16A
offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The
MR1A16A
is the ideal memory solution for applications that must permanently store and re-
trieve critical data and programs quickly.
The
MR1A16A
is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The
MR1A16A
provides highly reliable data storage over a wide range of temperatures. The prod-
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2019
1
MR1A16A Rev. 1.0 10/2019
MR1A16A
TABLE OF CONTENTS
FEATURES .............................................................................................................................................1
INTRODUCTION ...................................................................................................................................1
BLOCK DIAGRAM AND PIN ASSIGNMENTS .......................................................................................4
Figure 1 – Block Diagram ........................................................................................................................................... 4
Table 1 – Pin Functions ............................................................................................................................................... 4
Figure 2 – Pin Diagrams for Available Packages (Top View) .......................................................................... 5
Table 2 – Operating Modes ....................................................................................................................................... 5
ABSOLUTE MAXIMUM RATINGS .........................................................................................................6
Table 3 – Absolute Maximum Ratings................................................................................................................... 6
OPERATING CONDITIONS ...................................................................................................................7
Power Up and Power Down Sequencing .......................................................................................8
Figure 3 – Power Up and Power Down Diagram ............................................................................................... 8
DC CHARACTERISTICS .........................................................................................................................9
Table 4 – DC Characteristics...................................................................................................................................... 9
Table 5 – Power Supply Characteristics ................................................................................................................ 9
TIMING SPECIFICATIONS ................................................................................................................. 10
Table 6 – Capacitance ...............................................................................................................................................10
Table 7 – AC Measurement Conditions ..............................................................................................................10
Figure 4 – Output Load Test Low and High .......................................................................................................10
Figure 5 – Output Load Test All Others ...............................................................................................................10
Read Mode .................................................................................................................................... 11
Table 8 – Read Cycle Timing ...................................................................................................................................11
Figure 6 – Read Cycle 1 .............................................................................................................................................11
Figure 7 – Read Cycle 2 .............................................................................................................................................11
Write Mode.................................................................................................................................... 12
Table 9 – Write Cycle Timing 1 (W Controlled) .................................................................................................12
Copyright © Everspin Technologies 2019
2
MR1A16A Rev. 1.0 10/2019
MR1A16A
TABLE OF CONTENTS (CONT’D)
Figure 8 – Write Cycle Timing 1 (W Controlled) ...............................................................................................12
Table 10 – Write Cycle Timing 2 (E Controlled) ................................................................................................13
Figure 9 – Write Cycle Timing 2 (E Controlled) .................................................................................................13
Table 11 – Write Cycle Timing 3 (LB /
UB
Controlled)....................................................................................14
Figure 10 – Write Cycle Timing 3 (LB /
UB
Controlled)..................................................................................14
ORDERING INFORMATION ............................................................................................................... 15
Table 12 – Ordering Part Number System for Parallel I/O MRAM..............................................................15
Table 13 – MR1A16A Ordering Part Numbers ..................................................................................................16
PACKAGE OUTLINE DRAWINGS ....................................................................................................... 17
Figure 11 – 44-TSOP2 Package Outline...............................................................................................................17
Figure 12 – 48-FBGA Packge Outline ...................................................................................................................18
REVISION HISTORY ........................................................................................................................... 19
HOW TO CONTACT US ....................................................................................................................... 20
Copyright © Everspin Technologies 2019
3
MR1A16A Rev. 1.0 10/2019
MR1A16A
BLOCK DIAGRAM AND PIN ASSIGNMENTS
Figure 1 – Block Diagram
A[16:0]
17
9
128K x 16
Table 1 – Pin Functions
Signal Name
A
E
W
G
UB
LB
Function
Address Input
Chip Enable
Write Enable
Output Enable
Upper Byte Enable
Lower Byte Enable
Data I/O
Power Supply
Ground
Do Not Connect
No Connection
DQ
V
DD
V
SS
DC
NC
Copyright © Everspin Technologies 2019
4
MR1A16A Rev. 1.0 10/2019
MR1A16A
Figure 2 – Pin Diagrams for Available Packages (Top View)
A
A
A
A
A
E
DQL0
DQL1
DQL2
DQL3
V
DD
V
SS
DQL4
DQL5
DQL6
DQL7
W
A
A
A
A
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
A
A
G
UB
LB
DQU15
DQU14
DQU13
DQU12
V
SS
V
DD
DQU11
DQU10
DQU9
DQU8
DC
V
DD
A
A
A
A
1
LB
DQU8
2
G
UB
DQU10
3
A0
A3
A5
A15
NC
A12
A10
A8
4
A1
A4
A6
A16
A14
A13
A11
A9
5
A2
E
DQL1
6
NC
DQL0
A
B
C
D
E
F
G
H
DQU9
DQL2
V
SS
V
DD
DQU14
DQU11
DQL3
V
DD
V
SS
DQL6
DQU12
DQL4
DQU13
DQL5
DQU15
NC
A7
W
V
DD
DQL7
NC
DC
44-Pin TSOP Type2
48-Pin BGA
Table 2 – Operating Modes
E
1
H
L
L
L
L
L
L
L
L
Notes:
1.
2.
H = high, L = low, X = don’t care
Hi-Z = high impedance
G
1
X
H
X
L
L
L
X
X
X
W
1
LB
1
UB
1
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
Mode
Not selected
Output disabled
Output disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
V
DD
Current
I
SB1
, I
SB2
I
DDR
I
DDR
I
DDR
I
DDR
I
DDR
I
DDW
I
DDW
I
DDW
DQL[7:0]
2
Hi-Z
Hi-Z
Hi-Z
D
Out
Hi-Z
D
Out
D
in
Hi-Z
D
in
DQU[15:8]
2
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
Out
D
Out
Hi-Z
D
in
D
in
Copyright © Everspin Technologies 2019
5
MR1A16A Rev. 1.0 10/2019
查看更多>
参数对比
与MR1A16AVMA35R相近的元器件有:MR1A16ACMA35R、MR1A16AMA35R。描述及对比如下:
型号 MR1A16AVMA35R MR1A16ACMA35R MR1A16AMA35R
描述 Memory Circuit, Memory Circuit, Memory Circuit,
是否Rohs认证 符合 符合 符合
包装说明 LFBGA, LFBGA, BGA-48
Reach Compliance Code unknown unknown compliant
JESD-30 代码 S-PBGA-B48 S-PBGA-B48 S-PBGA-B48
长度 8 mm 8 mm 8 mm
内存密度 2097152 bit 2097152 bit 2097152 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16
功能数量 1 1 1
端子数量 48 48 48
字数 131072 words 131072 words 131072 words
字数代码 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 105 °C 85 °C 70 °C
最低工作温度 -40 °C -40 °C -
组织 128KX16 128KX16 128KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA LFBGA LFBGA
封装形状 SQUARE SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
座面最大高度 1.35 mm 1.35 mm 1.35 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL COMMERCIAL
端子形式 BALL BALL BALL
端子节距 0.75 mm 0.75 mm 0.75 mm
端子位置 BOTTOM BOTTOM BOTTOM
宽度 8 mm 8 mm 8 mm
厂商名称 Everspin Technologies - Everspin Technologies
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