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MR27T1602L-XXXTN

描述:
MASK ROM, 1MX16, 70ns, CMOS, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
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制造商:
概述
MASK ROM, 1MX16, 70ns, CMOS, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
器件参数
参数名称
属性值
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
TSOP1
包装说明
12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
针数
48
Reach Compliance Code
unknown
ECCN代码
EAR99
最长访问时间
70 ns
备用内存宽度
8
JESD-30 代码
R-PDSO-G48
JESD-609代码
e6
长度
18.4 mm
内存密度
16777216 bit
内存集成电路类型
MASK ROM
内存宽度
16
功能数量
1
端子数量
48
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP48,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
PARALLEL
电源
3/3.3 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.00001 A
最大压摆率
0.016 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN BISMUTH
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
宽度
12 mm
文档预览
FEDR27T1602L-002-03
Issue Date: Jan.06, 2009
MR27T1602L
1M–Word
×
16–Bit or 2M–Word
×
8–Bit
P2ROM
PIN CONFIGURATION (TOP VIEW)
FEATURES
· 1,048,576-word
×
16-bit / 2,097,152-word
×
8-bit electrically
switchable configuration
· +2.7 V to 3.6 V power supply
· Access time
70 ns MAX
· Operating current 16 mA MAX (5MHz)
· Standby current
10 µA MAX
· Input/Output TTL compatible
· Three-state output
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
NC
43
A19
42
A8
41
A9
40
A10
39
A11
38
A12
37
A13
36
A14
35
A15
34
A16
33
BYTE#
32
V
SS
31
D15/A–1
30
D7
29
D14
28
D6
27
D13
26
D5
25
D12
24
D4
23
V
CC
Packages
· MR27T1602L-xxxMA
44-pin plastic SOP (SOP44-P-600-1.27-K)
· MR27T1602L-xxxTN
48-pin plastic TSOP (TSOP I 48-P-1220-0.50-1K)
· MR27T1602L-xxxLA
48-ball BGA (BGA48-6.0x8.0-0.8)
P2ROM ADVANCED TECHNOLOGY
P2ROM stands for Production Programmed ROM. This
exclusive LAPIS Semiconductor technology utilizes factory
test equipment for programming the customers code into the
P2ROM prior to final production testing.
Advancements in this technology allows production costs to be
equivalent to MASKROM and has many advantages and added
benefits over the other non-volatile technologies, which
include the following;
· Short lead time,
since the P2ROM is programmed at the
final stage of the production process, a large P2ROM
inventory "bank system" of un-programmed packaged
products are maintained to provide an aggressive
lead-time and minimize liability as a custom product.
· No mask charge,
since P2ROMs do not utilize a custom
mask for storing customer code, no mask charges apply.
· No additional programming charge,
unlike Flash and
OTP that require additional programming and handling
costs, the P2ROM already has the code loaded at the
factory with minimal effect on the production throughput.
The cost is included in the unit price.
· Custom Marking is
available at no additional charge.
· Pin Compatible with Mask ROM
and some FLASH
product
44SOP
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
A16
47
BYTE#
46
V
SS
45
D15/A–1
44
D7
43
D14
42
D6
41
D13
40
D5
39
D12
38
D4
37
V
CC
36
D11
35
D3
34
D10
33
D2
32
D9
31
D1
30
D8
29
D0
28
OE#
27
V
SS
26
CE#
25
A0
48TSOP(Type-I)
1/11
FEDR27T1602L-002-03
MR27T1602L / P2ROM
PIN CONFIGURATION (TOP VIEW): BGA PACKAGES
TOP View - Ball Side Down
1
A
B
C
D
E
F
G
H
A3
A4
A2
A1
A0
CE#
OE#
V
SS
2
A7
A17
A6
A5
D0
D8
D9
D1
3
NC
NC
A18
NC
D2
D10
D11
D3
4
NC
NC
NC
A19
D5
D12
V
CC
D4
5
A9
A8
A10
A11
D7
D14
D13
D6
6
A13
A12
A14
A15
A16
BYTE#
D15 / A–1
V
SS
48-ball BGA
2/11
FEDR27T1602L-002-03
MR27T1602L / P2ROM
BLOCK DIAGRAM
A–1
× 8/× 16 Switch
CE#
CE
OE#
OE
BYTE#
Column Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
Row Decoder
Memory Cell Matrix
1M × 16-Bit or 2M × 8-Bit
Address Buffer
Multiplexer
Output Buffer
D0
D1
D2
D3
D4
D5
D6
D7
D8
D10
D9
D12
D14
D15
D11
D13
In 8-bit output mode, these pins
are placed in a high-Z state and
pin D15 functions as the A-1
address pin.
PIN DESCRIPTIONS
Pin name
D15 / A–1
A0 to A19
D0 to D14
CE#
OE#
BYTE#
V
CC
V
SS
NC
Functions
Data output / Address input
Address inputs
Data outputs
Chip enable input
Output enable input
Word / Byte select input
Power supply voltage
Ground
No connect
3/11
FEDR27T1602L-002-03
MR27T1602L / P2ROM
FUNCTION TABLE
Mode
Read (16-Bit)
Read (8-Bit)
Output disable
Standby
CE#
L
L
L
H
OE#
L
L
H
BYTE#
H
L
H
L
H
L
V
CC
D0 to D7
D
OUT
3.0 V
D8 to D14
D
OUT
Hi–Z
Hi–Z
Hi–Z
D15/A–1
L/H
∗:
Don’t Care (H or L)
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Power dissipation per package
Output short circuit current
Symbol
Ta
Tstg
V
I
V
O
V
CC
P
D
I
OS
Condition
Value
0 to 70
–55 to 125
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
–0.5 to 5
1.0
10
Unit
°C
°C
V
V
V
W
mA
relative to V
SS
Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
Parameter
V
CC
power supply voltage
Input “H” level
Input “L” level
Symbol
V
CC
V
IH
V
IL
Condition
V
CC
= 2.7 to 3.6 V
Min.
2.7
2.2
–0.5∗∗
Typ.
(Ta = 0 to 70°C)
Max.
Unit
3.6
V
V
CC
+0.5∗
V
0.6
V
Voltage is relative to VSS.
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
PIN CAPACITANCE
Parameter
Input
BYTE#
Output
Symbol
C
IN1
C
IN2
C
OUT
Condition
V
I
= 0 V
V
O
= 0 V
Min.
(V
CC
= 3.0 V, Ta = 25°C, f = 1 MHz)
Typ.
Max.
Unit
8
pF
120
10
4/11
FEDR27T1602L-002-03
MR27T1602L / P2ROM
ELECTRICAL CHARACTERISTICS
DC Characteristics
(V
CC
= 2.7 V to 3.6 V, Ta = 0 to 70°C)
Min.
Typ.
Max.
Unit
10
μA
10
μA
10
μA
1
mA
2.2
–0.5∗∗
2.4
16
V
CC
+0.5∗
0.6
0.4
mA
V
V
V
V
Parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
Input “H” level
Input “L” level
Output “H” level
Output “L” level
Symbol
I
LI
I
LO
I
CCSC
I
CCST
I
CCA
V
IH
V
IL
V
OH
V
OL
Condition
V
I
= 0 to V
CC
V
O
= 0 to V
CC
CE# = V
CC
CE# = V
IH
CE# = V
IL
, OE# = V
IH
f=5MHz
I
OH
= –1 mA
I
OL
= 2 mA
Voltage is relative to V
SS
.
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
AC Characteristics
(V
CC
= 2.7 V to 3.6 V, Ta = 0 to 70°C)
Min.
Max.
Unit
70
ns
70
ns
70
ns
25
ns
0
30
ns
0
25
ns
0
ns
Parameter
Address cycle time
Address access time
CE# access time
OE# access time
Output disable time
Output hold time
Symbol
t
C
t
ACC
t
CE
t
OE
t
CHZ
t
OHZ
t
OH
Condition
CE# = OE# = V
IL
OE# = V
IL
CE# = V
IL
OE# = V
IL
CE# = V
IL
CE# = OE# = V
IL
Measurement conditions
Input signal level------------------------------------ 0 V / Vcc
Input timing reference level ---------------------- 1/2 Vcc
Output load------------------------------------------- 50 pF
Output timing reference level-------------------- 1/2 Vcc
Output load
Output
50 pF
(Including scope and jig)
5/11
参数对比
与MR27T1602L-XXXTN相近的元器件有:MR27T1602L-XXXMA、MR27T1602L-XXXLA。描述及对比如下:
型号 MR27T1602L-XXXTN MR27T1602L-XXXMA MR27T1602L-XXXLA
描述 MASK ROM, 1MX16, 70ns, CMOS, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 MASK ROM, 1MX16, 70ns, CMOS, PDSO44, 0.600 INCH, 1.27 MM PITCH, PLASTIC, SOP-44 MASK ROM, 1MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 0.80 MM PITCH, PLASTIC, TFBGA-48
零件包装代码 TSOP1 SOIC BGA
包装说明 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 0.600 INCH, 1.27 MM PITCH, PLASTIC, SOP-44 6 X 8 MM, 0.80 MM PITCH, PLASTIC, TFBGA-48
针数 48 44 48
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 70 ns 70 ns 70 ns
备用内存宽度 8 8 8
JESD-30 代码 R-PDSO-G48 R-PDSO-G44 R-PBGA-B48
JESD-609代码 e6 e6 e6
长度 18.4 mm 28.15 mm 8 mm
内存密度 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 MASK ROM MASK ROM MASK ROM
内存宽度 16 16 16
功能数量 1 1 1
端子数量 48 44 48
字数 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 1MX16 1MX16 1MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP SOP TFBGA
封装等效代码 TSSOP48,.8,20 SOP44,.63 BGA48,6X8,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL
电源 3/3.3 V 3/3.3 V 3/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 3.1 mm 1.2 mm
最大待机电流 0.00001 A 0.00001 A 0.00001 A
最大压摆率 0.016 mA 0.016 mA 0.016 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 2.7 V 2.7 V 2.7 V
标称供电电压 (Vsup) 3 V 3 V 3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN BISMUTH TIN BISMUTH TIN BISMUTH
端子形式 GULL WING GULL WING BALL
端子节距 0.5 mm 1.27 mm 0.8 mm
端子位置 DUAL DUAL BOTTOM
宽度 12 mm 13 mm 6 mm
厂商名称 LAPIS Semiconductor Co Ltd - LAPIS Semiconductor Co Ltd
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