FEDR27V1602F-002-05
Issue Date: Jul. 9, 2004
MR27V1602F
1M–Word
×
16–Bit or 2M–Word
×
8–Bit
P2ROM
PIN CONFIGURATION (TOP VIEW)
FEATURES
· 1,048,576-word
×
16-bit / 2,097,152-word
×
8-bit electrically
switchable configuration
· 3.0 V to 3.6 V power supply
· Access time
80 ns MAX
· Operating current
16 mA MAX (5MHz)
· Standby current
10 µA MAX
· Input/Output TTL compatible
· Three-state output
PACKAGES
· MR27V1602F-xxxMA
44-pin plastic SOP (SOP44-P-600-1.27-K)
· MR27V1602F-xxxTP
44-pin plastic TSOP (TSOP II 44-P-400-0.80-K)
· MR27V1602F-xxxTN
48-pin plastic TSOP (TSOP I 48-P-1220-0.50-1K)
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
D0
D8
D1
D9
D2
D10
D3
D11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
NC
43
A19
42
A8
41
A9
40
A10
39
A11
38
A12
37
A13
36
A14
35
A15
34
A16
33
BYTE#
32
V
SS
31
D15/A–1
30
D7
29
D14
28
D6
27
D13
26
D5
25
D12
24
D4
23
V
CC
P2ROM ADVANCED TECHNOLOGY
P2ROM stands for Production Programmed ROM. This
exclusive LAPIS Semiconductor’s technology utilizes factory
test equipment for programming the customers code into the
P2ROM prior to final production testing. Advancements in this
technology allows production costs to be equivalent to
MASKROM and has many advantages and added benefits over
the other non-volatile technologies, which include the
following;
·
Short lead time,
since the P2ROM is programmed at the
final stage of the production process, a large P2ROM
inventory "bank system" of un-programmed packaged
products are maintained to provide an aggressive lead-time
and minimizes liability as a custom product.
·
No mask charge,
since P2ROMs do not utilize a custom
mask for storing customer code, no mask charges apply.
·
No additional programming charge,
unlike Flash and
OTP that require additional programming and handling
costs, the P2ROM already has the code loaded at the
factory with minimal effect on the production throughput.
The cost is included in the unit price.
·
Custom Marking is
available at no additional charge.
·
Pin Compatible with Mask ROM
and some FLASH
products.
44SOP,
44TSOP(Type-II)
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
A16
47
BYTE#
46
V
SS
45
D15/A–1
44
D7
43
D14
42
D6
41
D13
40
D5
39
D12
38
D4
37
V
CC
36
D11
35
D3
34
D10
33
D2
32
D9
31
D1
30
D8
29
D0
28
OE#
27
V
SS
26
CE#
25
A0
48TSOP(Type-I)
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FEDR27V1602F-002-05
MR27V1602F / P2ROM
BLOCK DIAGRAM
A–1
× 8/× 16 Switch
CE#
CE
OE#
OE
BYTE#
Column Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
Row Decoder
Memory Cell Matrix
1M × 16-Bit or 2M × 8-Bit
Address Buffer
Multiplexer
Output Buffer
D0
D1
D2
D3
D4
D5
D6
D7
D8
D10
D9
D12
D14
D15
D11
D13
In 8-bit output mode, these pins
are placed in a high-Z state and
pin D15 functions as the A-1
address pin.
PIN DESCRIPTIONS
Pin name
D15 / A–1
A0 to A19
D0 to D14
CE#
OE#
BYTE#
V
CC
V
SS
NC
Functions
Data output / Address input
Address inputs
Data outputs
Chip enable input
Output enable input
Word / Byte select input
Power supply voltage
Ground
No connect
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FEDR27V1602F-002-05
MR27V1602F / P2ROM
FUNCTION TABLE
Mode
Read (16-Bit)
Read (8-Bit)
Output disable
Standby
∗:
Don’t Care (H or L)
CE#
L
L
L
H
OE#
L
L
H
∗
BYTE#
H
L
H
L
H
L
V
CC
D0 to D7
D
OUT
3.3 V
D8 to D14
D
OUT
Hi–Z
Hi–Z
Hi–Z
D15/A–1
L/H
∗
∗
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating temperature under bias
Storage temperature
Input voltage
Output voltage
Power supply voltage
Power dissipation per package
Output short circuit current
Symbol
Ta
Tstg
V
I
V
O
V
CC
P
D
I
OS
Condition
—
relative to V
SS
Ta = 25°C
—
Value
0 to 70
–55 to 125
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
–0.5 to 5
1.0
10
Unit
°C
°C
V
V
V
W
mA
RECOMMENDED OPERATING CONDITIONS
Parameter
V
CC
power supply voltage
Input “H” level
Input “L” level
Symbol
V
CC
V
IH
V
IL
Condition
V
CC
= 3.0 to 3.6 V
Min.
3.0
2.2
–0.5∗∗
Typ.
—
—
—
(Ta = 0 to 70°C)
Max.
Unit
3.6
V
V
V
CC
+0.5∗
0.6
V
Voltage is relative to V
SS
.
∗
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
PIN CAPACITANCE
Parameter
Input
BYTE#
Output
Symbol
C
IN1
C
IN2
C
OUT
Condition
V
I
= 0 V
V
O
= 0 V
Min.
—
—
—
(V
CC
= 3.3 V, Ta = 25°C, f = 1 MHz)
Typ.
Max.
Unit
—
8
pF
—
120
—
10
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FEDR27V1602F-002-05
MR27V1602F / P2ROM
ELECTRICAL CHARACTERISTICS
DC Characteristics
(V
CC
= 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Typ.
Max.
Unit
—
10
μA
—
10
μA
—
10
μA
—
1
mΑ
—
—
—
—
—
16
V
CC
+0.5
∗
0.6
—
0.4
mA
V
V
V
V
Parameter
Input leakage current
Output leakage current
V
CC
power supply current
(Standby)
V
CC
power supply current
(Read)
Input “H” level
Input “L” level
Output “H” level
Output “L” level
Symbol
I
LI
I
LO
I
CCSC
I
CCST
I
CCA
V
IH
V
IL
V
OH
V
OL
Condition
V
I
= 0 to V
CC
V
O
= 0 to V
CC
CE# = V
CC
CE# = V
IH
CE# = V
IL
, OE# = V
IH
f=5MHz
—
—
I
OH
= –2 mA
I
OL
= 4 mA
Min.
—
—
—
—
—
2.2
–0.5∗∗
2.4
—
Voltage is relative to V
SS
.
∗
: Vcc+1.5V(Max.) when pulse width of overshoot is less than 10ns.
∗∗
: -1.5V(Min.) when pulse width of undershoot is less than 10ns.
AC Characteristics
(V
CC
= 3.3 V ± 0.3 V, Ta = 0 to 70°C)
Min.
Max.
Unit
80
—
ns
—
80
ns
—
80
ns
—
30
ns
0
20
ns
0
20
ns
0
—
ns
Parameter
Address cycle time
Address access time
CE# access time
OE# access time
Output disable time
Output hold time
Symbol
t
C
t
ACC
t
CE
t
OE
t
CHZ
t
OHZ
t
OH
Condition
—
CE# = OE# = V
IL
OE# = V
IL
CE# = V
IL
OE# = V
IL
CE# = V
IL
CE# = OE# = V
IL
Measurement conditions
Input signal level --------------------------------------0 V / 3 V
Input timing reference level-------------------------1/2 Vcc
Output load ---------------------------------------------50 pF
Output timing reference level ----------------------1/2 Vcc
Output load
Output
50 pF
(Including scope and jig)
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FEDR27V1602F-002-05
MR27V1602F / P2ROM
TIMING CHART (READ CYCLE)
16-BIT READ MODE (BYTE# = V
IH
)
t
C
A0 to A19
t
C
t
OH
t
CE
CE#
t
ACC
t
CHZ
t
OE
OE#
t
OH
t
ACC
D0 to D15
Hi-Z
Valid Data
t
OHZ
Valid Data
Hi-Z
8-BIT READ MODE (BYTE# = V
IL
)
t
C
A-1 to A19
t
C
t
OH
t
CE
CE#
t
ACC
t
CHZ
t
OE
OE#
t
OH
t
ACC
D0 to D7
Hi-Z
Valid Data
t
OHZ
Valid Data
Hi-Z
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嵌入式系统