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MR2A16ACYS35

NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM

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厂商名称:Everspin Technologies

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TSOP2
包装说明
TSOP2, TSOP44,.46,32
针数
44
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
35 ns
JESD-30 代码
R-PDSO-G44
长度
18.41 mm
内存密度
4194304 bit
内存集成电路类型
MEMORY CIRCUIT
内存宽度
16
混合内存类型
N/A
湿度敏感等级
3
功能数量
1
端子数量
44
字数
262144 words
字数代码
256000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
256KX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSOP44,.46,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.2 mm
最大待机电流
0.028 A
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
Base Number Matches
1
文档预览
MR2A16A
FEATURES
• Fast 35 ns Read/Write cycle
• SRAM compatible timing, uses existing SRAM control-
lers without redesign
• Unlimited Read & Write endurance
• Data non-volatile for >20 years at temperature
• One memory replaces Flash, SRAM, EEPROM and
BBSRAM in a system for simpler, more efficient design
• Replaces battery-backed SRAM solutions with MRAM
to improve reliability
• 3.3 volt power supply
• Automatic data protection on power loss
• Commercial, Industrial, Extended temperatures
• AEC-Q100 Grade 1 option
• All products meet MSL-3 moisture sensitivity level
• RoHS-compliant SRAM TSOP2 and BGA Packages
256K x 16 MRAM Memory
44-pin TSOP2
48-ball BGA
INTRODUCTION
RoHS
The MR2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device orga-
nized as 262,144 words of 16 bits. The MR2A16A offers SRAM compatible 35 ns read/write timing
with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automati-
cally protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of
specification.
The MR2A16A is the ideal memory solution for applications that must permanently store and re-
trieve critical data and programs quickly.
The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin
small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM
products and other nonvolatile RAM products.
The MR2A16A provides highly reliable data storage over a wide range of temperatures. The prod-
uct is offered with Commercial (0 to +70 °C), Industrial (-40 to +85 °C), Extended (-40 to +105 °C),
and AEC-Q100 Grade 1 (-40 to +125 °C) operating temperature range options.
Copyright © Everspin Technologies 2015
1
MR2A16A Rev. 11.2, 6/2015
MR2A16A
TABLE OF CONTENTS
FEATURES .............................................................................................................................................1
INTRODUCTION ...................................................................................................................................1
BLOCK DIAGRAM AND PIN ASSIGNMENTS .......................................................................................4
Figure 1 – Block Diagram ........................................................................................................................................... 4
Table 1 – Pin Functions ............................................................................................................................................... 4
Figure 2 – Pin Diagrams for Available Packages (Top View) .......................................................................... 5
Table 2 – Operating Modes ....................................................................................................................................... 5
ABSOLUTE MAXIMUM RATINGS .........................................................................................................6
Table 3 – Absolute Maximum Ratings ................................................................................................................... 6
OPERATING CONDITIONS ...................................................................................................................7
Power Up and Power Down Sequencing .......................................................................................8
Figure 3 – Power Up and Power Down Diagram ............................................................................................... 8
DC CHARACTERISTICS .........................................................................................................................9
Table 4 – DC Characteristics ...................................................................................................................................... 9
Table 5 – Power Supply Characteristics ................................................................................................................ 9
TIMING SPECIFICATIONS ................................................................................................................. 10
Table 6 – Capacitance ...............................................................................................................................................10
Table 7 – AC Measurement Conditions ..............................................................................................................10
Figure 4 – Output Load Test Low and High .......................................................................................................10
Figure 5 – Output Load Test All Others ...............................................................................................................10
Read Mode .................................................................................................................................... 11
Table 8 – Read Cycle Timing ...................................................................................................................................11
Figure 6 – Read Cycle 1 .............................................................................................................................................11
Figure 7 – Read Cycle 2 .............................................................................................................................................11
Write Mode.................................................................................................................................... 12
Table 9 – Write Cycle Timing 1 (W Controlled) .................................................................................................12
Copyright © Everspin Technologies 2015
2
MR2A16A Rev. 11.2, 6/2015
MR2A16A
TABLE OF CONTENTS (CONT’D)
Figure 8 – Write Cycle Timing 1 (W Controlled) ...............................................................................................12
Table 10 – Write Cycle Timing 2 (E Controlled) ................................................................................................13
Figure 9 – Write Cycle Timing 2 (E Controlled) .................................................................................................13
Table 11 – Write Cycle Timing 3 (LB / UB Controlled) ....................................................................................14
Figure 10 – Write Cycle Timing 3 (LB / UB Controlled) ..................................................................................14
ORDERING INFORMATION ............................................................................................................... 15
Table 12 – Ordering Part Number System for Parallel I/O MRAM..............................................................15
Table 13 – MR2A16A Ordering Part Numbers ..................................................................................................16
PACKAGE OUTLINE DRAWINGS ....................................................................................................... 17
Figure 11 – 44-TSOP2 Package Outline...............................................................................................................17
Figure 12 – 48-FBGA Packge Outline ...................................................................................................................18
REVISION HISTORY ........................................................................................................................... 19
HOW TO CONTACT US ....................................................................................................................... 20
Copyright © Everspin Technologies 2015
3
MR2A16A Rev. 11.2, 6/2015
MR2A16A
BLOCK DIAGRAM AND PIN ASSIGNMENTS
Figure 1 – Block Diagram
Table 1 – Pin Functions
Signal Name
A
E
W
G
UB
LB
Function
Address Input
Chip Enable
Write Enable
Output Enable
Upper Byte Enable
Lower Byte Enable
Data I/O
Power Supply
Ground
Do Not Connect
No Connection
DQ
V
DD
V
SS
DC
NC
Copyright © Everspin Technologies 2015
4
MR2A16A Rev. 11.2, 6/2015
MR2A16A
Figure 2 – Pin Diagrams for Available Packages (Top View)
A
A
A
A
A
E
DQL0
DQL1
DQL2
DQL3
V
DD
V
SS
DQL4
DQL5
DQL6
DQL7
W
A
A
A
A
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
A
A
G
UB
LB
DQU15
DQU14
DQU13
DQU12
V
SS
V
DD
DQU11
DQU10
DQU9
DQU8
DC
A
A
A
A
A
1
LB
DQU8
2
G
UB
DQU10
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
E
DQL1
6
NC
DQL0
A
B
C
D
E
F
G
H
DQU9
DQL2
V
SS
V
DD
DQU14
DQU11
DQL3
V
DD
V
SS
DQL6
DQU12
DQL4
DQU13
DQL5
DQU15
NC
A8
W
A11
DQL7
NC
DC
44-Pin TSOP Type2
48-Pin BGA
Table 2 – Operating Modes
E
1
H
L
L
L
L
L
L
L
L
Notes:
1. H = high, L = low, X = don’t care
2. Hi-Z = high impedance
G
1
X
H
X
L
L
L
X
X
X
W
1
LB
1
UB
1
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
Mode
Not selected
Output disabled
Output disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
V
DD
Current
I
SB1
, I
SB2
I
DDR
I
DDR
I
DDR
I
DDR
I
DDR
I
DDW
I
DDW
I
DDW
DQL[7:0]
2
Hi-Z
Hi-Z
Hi-Z
D
Out
Hi-Z
D
Out
D
in
Hi-Z
D
in
DQU[15:8]
2
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
Out
D
Out
Hi-Z
D
in
D
in
Copyright © Everspin Technologies 2015
5
MR2A16A Rev. 11.2, 6/2015
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参数对比
与MR2A16ACYS35相近的元器件有:MR2A16AVYS35、MR2A16ACMA35。描述及对比如下:
型号 MR2A16ACYS35 MR2A16AVYS35 MR2A16ACMA35
描述 NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM
是否Rohs认证 符合 符合 符合
零件包装代码 TSOP2 TSOP2 BGA
包装说明 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 LFBGA, BGA48,6X8,30
针数 44 44 48
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
最长访问时间 35 ns 35 ns 35 ns
JESD-30 代码 R-PDSO-G44 R-PDSO-G44 S-PBGA-B48
长度 18.41 mm 18.41 mm 8 mm
内存密度 4194304 bit 4194304 bit 4194304 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16
混合内存类型 N/A N/A N/A
功能数量 1 1 1
端子数量 44 44 48
字数 262144 words 262144 words 262144 words
字数代码 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 105 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
组织 256KX16 256KX16 256KX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 LFBGA
封装等效代码 TSOP44,.46,32 TSOP44,.46,32 BGA48,6X8,30
封装形状 RECTANGULAR RECTANGULAR SQUARE
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.35 mm
最大待机电流 0.028 A 0.028 A 0.028 A
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING GULL WING BALL
端子节距 0.8 mm 0.8 mm 0.75 mm
端子位置 DUAL DUAL BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 10.16 mm 8 mm
湿度敏感等级 3 - 3
Base Number Matches 1 - 1
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