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MR750

6 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:SUNMATE

厂商官网:http://www.sunmate.tw/

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器件:MR750

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MR750-MR760
6.0A Axial Leaded Silicon Rectifier
Features
·
·
·
·
·
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
·
Case: R-6, Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: Cathode Band
·
Weight: 2.1 grams (approx.)
·
Mounting Position: Any
·
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
C
R-6
Dim
Min
Max
25.4
A
8.60
9.10
B
1.20
1.30
C
8.60
9.10
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 6.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MR750
MR751
MR752
MR754
MR756
MR758
MR760
Unit
50
35
100
70
200
140
400
280
6.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
400
1.0
5.0
1.0
150
20
-50 to +150
-50 to +150
A
V
µA
mA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1of2
8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
7
I
O
, AVERAGE RECTIFIED CURRENT (A)
6
5
4
3
2
1
0
0
25
50
75
100
125
150 175
200
10
1.0
T
j
= 25ºC
Pulse Width = 300
µ
s
2% Duty Cycle
0.1
0
0.2
0.6
1.0
1.4
1.8
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2, Typical Forward Characteristics
500
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
1000
T
j
= 25°C
f = 1MHz
300
C
j
, CAPACITANCE (pF)
8.3ms Single Half Sine-Wave
JEDEC Method
400
100
200
100
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
100
10
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
2of2
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参数对比
与MR750相近的元器件有:MR751、MR752、MR754、MR756、MR760、MR758。描述及对比如下:
型号 MR750 MR751 MR752 MR754 MR756 MR760 MR758
描述 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 400 V, SILICON, RECTIFIER DIODE 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE
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器件捷径:
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