Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0886
Features
• Usable Gain to 5.5 GHz
• High Gain:
32.5 dB Typical at 0.1 GHz
22.5 dB Typical at 1.0 GHz
• Low Noise Figure:
3.3 dB Typical at 1.0 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-0886 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
Ω
gain block
above 0.5 GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
86 Plastic Package
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R
bias
V
CC
>
10
V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 7.8 V
2
5965-9547E
6-426
MSA-0886 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
65 mA
500 mW
+13 dBm
150°C
–65°C to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 80°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 36 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
Min.
20.5
Typ.
32.5
22.5
2.1:1
1.9:1
Max.
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
dB
dBm
dBm
psec
V
mV/°C
6.2
3.3
12.5
27.0
140
7.8
–17.0
9.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0886-TR1
MSA-0886-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-427
MSA-0886 Typical Scattering Parameters
[1]
(Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 36 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.63
.56
.43
.35
.30
.27
.27
.31
.35
.40
.45
.51
.61
.68
–22
–41
–69
–88
–104
–116
–144
–166
178
162
149
137
116
100
32.5
31.3
28.6
26.4
24.2
22.4
19.2
16.7
14.8
12.9
11.4
9.9
7.3
4.6
42.12
36.68
26.94
20.89
16.21
13.20
9.15
6.84
5.50
4.41
3.72
3.14
2.31
1.69
160
143
119
104
93
83
65
49
38
25
13
1
–22
–42
–36.7
–33.9
–29.1
–27.0
–25.3
–24.2
–21.6
–19.5
–17.9
–17.4
–16.8
–16.1
–15.7
–15.2
.015
.020
.035
.045
.054
.062
.083
.105
.128
.135
.145
.157
.164
.173
54
50
52
49
50
49
46
41
36
30
25
19
10
4
.62
.55
.43
.34
.29
.26
.23
.22
.21
.20
.19
.18
.17
.23
–24
–46
–79
–103
–124
–139
–172
163
149
132
124
121
130
143
0.68
0.64
0.69
0.77
0.83
0.87
0.93
0.96
0.96
1.01
1.02
1.01
1.00
0.95
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
35
30
25
G
p
(dB)
30
I
d
= 36 mA
I
d
(mA)
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
Gp (dB)
40
23
22
21
G
P
13
P
1 dB
(dBm)
20
15
10
5
Gain Flat to DC
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I
d
= 20 mA
20
P
1 dB
12
11
NF (dB)
10
4
3
2
NF
0
0
2
4
6
V
d
(V)
8
10
–25
0
+25
+55
+85
TEMPERATURE (°C)
Figure 1. Typical Power Gain vs.
Frequency, I
d
= 36 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=36mA.
16
I
d
= 40 mA
14
12
10
8
I
d
= 36 mA
NF (dB)
4.5
4.0
I
d
= 20 mA
I
d
= 36 mA
I
d
= 40 mA
P
1 dB
(dBm)
3.5
3.0
6
I
d
= 20 mA
2.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
4
0.1
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-428
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A08
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-429
