¡ Semiconductor
¡ Semiconductor
MSC23B236A-xxBS8/DS8
DESCRIPTION
MSC23B236A-xxBS8/DS8
2,097,152-Word
¥
36-Bit DRAM MODULE : FAST PAGE MODE TYPE
The Oki MSC23B236A-xxBS8/DS8 is a fully decoded 2,097,152-word
¥
36-bit CMOS dynamic
random access memory composed of four 16-Mb (1M
¥
16) DRAMs in SOJ and four 2-Mb (1M
¥
2) DRAMs in SOJ. The mounting of eight DRAMs together with decoupling capacitors on a 72-
pin glass epoxy SIMM Package supports any application where high density and large capacity
of storage memory are required.
FEATURES
• 2,097,152-word
¥
36-bit (Parity) organization
• 72-pin SIMM
MSC23B236A-xxBS8
: Gold tab
MSC23B236A-xxDS8
: Solder tab
• Single 5 V supply
±10%
tolerance
• Input : TTL compatible
• Output : TTL compatible, 3-state, nonlatch
• Refresh : 1024 cycles/16 ms
•
CAS
before
RAS
refresh,
CAS
before
RAS
hidden refresh,
RAS-only
refresh capability
• Fast Page Mode capability
PRODUCT FAMILY
Family
MSC23B236A-60BS8/DS8
MSC23B236A-70BS8/DS8
Access Time (Max.)
t
RAC
60 ns
70 ns
t
AA
30 ns
35 ns
t
CAC
15 ns
20 ns
Power Dissipation
Cycle Time
Operating (Max.) Standby (Max.)
(Min.)
110 ns
130 ns
3410 mW
3080 mW
44 mW
159
MSC23B236A-xxBS8/DS8
¡ Semiconductor
PIN CONFIGURATION
MSC23B236A-xxBS8/DS8
*1
107.95 ±0.2
101.19 Typ.
(Unit : mm)
9.3 Max.
3.38 ±0.13
f
3.18
25.4 ±0.13
10.16 6.35
±0.13 ±0.13
2.03 ±0.13
1.27 ±0.1
6.35 Typ.
72
R1.57
6.35
95.25
1.04 Typ.
+0.1
1.27 –0.08
5.7 Min.
1
*1 The common size difference of the board width 12.5 mm of its height is
specified as ±0.2. The value above 12.5 mm is specified as ±0.5.
Pin No. Pin Name
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
Pin No. Pin Name
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
A4
A5
A6
NC
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
NC
V
CC
Pin No. Pin Name
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
A8
A9
RAS3
RAS2
DQ26
DQ8
DQ17
DQ35
V
SS
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
Pin No. Pin Name
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
NC
WE
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
Pin No. Pin Name
61
62
63
64
65
66
67
68
69
70
71
72
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Pin No.
67
68
69
70
Pin Name
PD1
PD2
PD3
PD4
MSC23B236A
-60BS8/DS8
NC
NC
NC
NC
MSC23B236A
-70BS8/DS8
NC
NC
V
SS
NC
160
¡ Semiconductor
MSC23B236A-xxBS8/DS8
BLOCK DIAGRAM
A0 - A9
CAS0
CAS1
WE
A0 - A9
RAS0
RAS
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
CC
A0 - A9
RAS
RAS1
LCAS
LCAS
UCAS
UCAS
WE
WE
OE
V
SS
OE
V
SS
V
CC
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
A0 - A9
RAS2
RAS
DQ1
DQ2
DQ8
DQ17
DQ1
DQ2
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
A0 - A9
RAS
RAS3
V
CC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ27
DQ28
DQ29
DQ30
DQ31
DQ32
DQ33
DQ34
V
CC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
V
CC
LCAS
LCAS
UCAS
UCAS
WE
WE
OE
V
SS
OE
V
SS
V
CC
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
CAS2
CAS3
V
CC
V
SS
DQ1
DQ2
DQ26
DQ35
DQ1
DQ2
A0 - A9
RAS
CAS1
CAS2
WE
OE
V
SS
V
CC
V
CC
C1
C8
161
MSC23B236A-xxBS8/DS8
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
T
opr
T
stg
Rating
–1.0 to 7.0
–1.0 to 7.0
50
9.2
0 to 70
–40 to 125
Unit
V
V
mA
W
°C
°C
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to the conditions as detailed in the
operational sections of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A9)
Input Capacitance (WE)
Input Capacitance (RAS0 -
RAS3)
Input Capacitance (CAS0 -
CAS3)
I/O Capacitance (DQ0 - DQ35)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Typ.
—
—
—
—
—
Max.
53
65
20
35
20
(Ta = 25°C, f = 1 MHz)
Unit
pF
pF
pF
pF
pF
Note : Capacitance measured with Boonton Meter.
162
¡ Semiconductor
DC Characteristics
MSC23B236A
Parameter
Symbol
MSC23B236A-xxBS8/DS8
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
MSC23B236A
-70BS8/DS8
Min.
–80
Max.
80
µA
Unit Note
Condition
0 V
£
V
I
£
6.5 V;
-60BS8/DS8
Min.
Max.
80
Input Leakage Current
I
LI
All other pins not
under test = 0 V
D
OUT
disable
0 V
£
V
O
£
5.5 V
I
OH
= –5.0 mA
I
OL
= 4.2 mA
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
–80
Output Leakage Current
Output High Voltage
Output Low Voltage
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
V
OH
V
OL
I
CC1
–20
2.4
0
—
—
—
20
V
CC
0.4
620
16
8
–20
2.4
0
—
—
—
20
V
CC
0.4
560
16
8
µA
V
V
mA 1, 2
mA
mA
1
1
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
cycling,
—
620
—
560
mA 1, 2
I
CC6
CAS
before
RAS,
t
RC
= Min.
RAS
= V
IL
,
—
620
—
560
mA 1, 2
I
CC7
CAS
cycling,
t
PC
= Min.
—
480
—
450
mA 1, 3
Notes: 1. I
CC
Max. is specified as I
CC
for output open condition.
2. Address can be changed once or less while
RAS=V
IL
.
3. Address can be changed once or less while
CAS=V
IH
.
163
