MSDT75
Three Phase Bridge
+ Thyristor
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Features
Circuit
Blocking voltage:800 to 1600V
Three Phase Bridge and a Thyristor
Isolated Module package
800 to 1600V
75Amp
Applications
Inverter for AC or DC motor control
Current stabilized power supply
Switching power supply
UL E243882 approved
Module Type
TYPE
MSDT75-08
MSDT75-12
MSDT75-16
V
RRM
/V
DRM
800V
1200V
1600V
V
RSM
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
it
Visol
Tvj
Tstg
Mt
Ms
Weight
2
Item
Conditions
Tc=101℃ Three phase full wave
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
75
920
4200
3000
-40 to +150
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M5)
Module（Approximately）
3±15%
3±15%
210
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case(TOTAL)
Case to Heatsink
Values
0.20
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
Item
V
FM
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=100A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=150℃ V
RD
=V
RRM
Values
1.40
≤0.5
≤6
Units
V
mA
mA
I
RRM
Document Number: MSDT75
Jan.15,2015
www.smsemi.com
1
MSDT75
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Item
Conditions
Tc=99℃, Single Phase half wave
180
o
conduction
TVJ=45
℃
t=10ms (50Hz), sine
VR=0
a.c.50HZ;r.m.s.;1 min
Values
75
920
4200
3000
-40 to +125
-40 to +125
3±15%
3±15%
150
500
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/μs
V/μs
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M5)
T
VJ
=T
VJM
, V
D
=1/2V
DRM
,I
G
=100mA
d
iG
/d
t
=0.1A/μs
T
J
=T
VJM
,V
D
=2/3V
DRM
,linear voltage
rise
Electrical and Thermal Characteristics
Symbol
V
TM
I
RRM
/I
DRM
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
Rth(j-c)
Rth(c-s)
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse
Current, max. / Repetitive Peak
Off-State Current, max.
Threshold voltage
Slope resistance
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Max. required DC gate voltage
not to trigger
Max. required DC gate current
not to trigger
Maximum latching current
Maximum holding current
Gate controlled delay time
Circuit commutated turn-off time
Thermal Impedance, max.
Thermal Impedance, max.
Conditions
T=25℃ I
T
=300A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=V
DRM
Values
Min. Typ. Max.
1.70
20
0.9
3.0
3
150
0.25
6
300
150
1
100
600
250
Units
V
mA
V
mΩ
V
mA
V
mA
mA
mA
us
us
℃/W
℃/W
T
VJ
= T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=125℃ , V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
=33Ω
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃,I
G
=1A,di
G
/dt=1A/us
T
VJ
= T
VJM
Junction to Case
Case to Heatsink
0.30
0.10
Document Number: MSDT75
Jan.15,2015
www.smsemi.com
2
MSDT75
Performance Curves
250
W
200
Three phase
100
A
80
Three phase
150
60
100
40
50
P
vtot
0
0 I
D
20
40
60
A 80
20
I
D
0
0 Tc
50
100
℃
150
Fig1. Power dissipation
0.40
℃/
W
2000
A
Fig2. Forward Current Derating Curve
50HZ
Per one element
Z
th(j-
C
)
0.20
1000
Single phase half wave
Tj=25
℃
start
0
0
0.001 t 0.01
0.1
1.0
10
S 100
1
10
cycles
100
Fig3. Transient thermal impedance
1000
max
.
A
100
W
80
Fig4. Max Non-Repetitive Forward Surge
Current
60
100
40
20
I
F
10
0.5 V
F
1.0
1.5
2.0
V
2.5
Tj=25
℃
P
TAV
0
0 I
TAV
20
40
60
A 80
Fig5. Forward Characteristics
Document Number: MSDT75
Jan.15,2015
3
Fig6. SCR Power dissipation
www.smsemi.com
MSDT75
100
A
80
0.50
℃/
W
Z
th(j-
C
)
60
0.25
40
20
I
TAVM
0
0 Tc
50
100
℃
150
0
0.001 t 0.01
0.1
1.0
10
S 100
Fig7. SCR Forward Current Derating Curve
1000
A
max.
Fig8. SCR Transient thermal impedance
100
V
Pe
ak
Av
er
ag
e
G
Po
we
100
1
-10℃
135℃
at
e
r(
10
Po
w
W
)
er
(3
W
)
I
T
10
0.5 V
TM
1.0
1.5
2.0
Tj=25℃
V
G
2.5
0.1
10
1
I
G
25℃
Maximum Gate Non-Trigger Voltage
V
10
2
10
3
mA 10
4
Fig9. SCR Forward Characteristics
Fig10. Gate trigger Characteristics
Document Number: MSDT75
Jan.15,2015
www.smsemi.com
4
Peak Gate Current (3A)
10
Peak Forward Gate Voltage (10V)
G
at
e
MSDT75
Package Outline Information
CASE: M4
Dimensions in mm
Document Number: MSDT75
Jan.15,2015
www.smsemi.com
5
