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MSK4900ED

600v isolated half bridge gate driver

厂商名称:M.S. Kennedy (Anaren)

厂商官网:https://www.anaren.com/

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MIL-PRF-38534 CERTIFIED
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
600V ISOLATED
HALF BRIDGE
GATE DRIVER
4900
(315) 701-6751
FEATURES:
Floating Channels up to 600V
Up to 8 Amp Peak Source and Sink Current
De-Saturation Protection/Shutdown
Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate
Undervoltage Lockout
Simultaneous Conduction Lockout
Contact MSK for MIL-PRF-38534 Qualification Status
DESCRIPTION:
The MSK 4900 is a complete isolated half bridge gate driver hybrid capable of working to 600V channel isolation and 8
amps peak turn-on and turn-off current. Housed in an isolated, convenient bolt-down hermetic package, the MSK 4900
houses the entire isolated DC-DC converter circuitry and opto-isolators for logic signals. The input logic prevents simulta-
neous conduction by locking out both high side and low side drives in case both inputs are asserted ON at the same time.
Each gate drive is capable of sourcing and sinking up to 8 amps peak current. The turn-on and turn-off pins are separate to
allow separate gate current control. Upon detection of a de-saturation condition, a FAULT is presented and the transistor is
shutdown by a separate controlled shutdown pin. The FAULT will have to be cleared before normal operation will begin
again. The MSK 4900 has good thermal conductivity due to an isolated substrate/package design that allows direct heat
sinking of the device without insulators.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Inverter Bridge Gate Drive
Motor Control Gate Drive Bridge
1
PIN-OUT INFORMATION
TBD
PRELIMINARY
Rev. -
1/07
ABSOLUTE MAXIMUM RATINGS
High Voltage Isolation
Logic Input Voltage
Vcc Supply
Continuous Output Current
Peak Ouput Current
Thermal Resistance
(output drivers - junction to case)
6
ELECTRICAL SPECIFICATIONS
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
Vcc SUPPLY CHARACTERISTICS
Vcc Voltage
Vcc Current
INPUT/OUTPUT LOGIC
Positive Trigger Input Voltage
Negative Trigger Input Voltage
Open Collector Ouput - VOL
Open Collector Ouput - IOL
OUTPUT CHARACTERISTICS - GATE DRIVE
VOH
VOL
IOH
IOL
ISD
tplh - Propagation Delay Time
tphl - Propagation Delay Time
tr - Rise Time
tf - Fall Time
td - De-Sat Delay Time
De-Sat Trip Voltage
C
L
=0.33µF, 20KHz pulse
14.25
-5.75
8
8
TBD
TBD
TBD
TBD
TBD
TBD
TBD
15.0
-5.0
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
15.75
-4.25
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
14.25
-5.75
8
8
TBD
TBD
TBD
TBD
TBD
TBD
TBD
15.0
-5.0
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
15.75
-4.25
-
-
TBD
TBD
TBD
TBD
TBD
TBD
TBD
V
V
A
A
µS
µS
µS
µS
µS
µS
V
I
OL
=1.5mA
2.0
-
-
-
-
-
0.15
-
-
0.8
0.4
1.5
2.0
-
-
-
-
-
0.15
-
-
0.8
0.4
1.5
V
V
V
mA
C
L
=0.33µF, 20KHz pulse
14.25
TBD
15.00
TBD
15.75
TBD
14.25
TBD
15.00
TBD
15.75
TBD
V
mA
Test Conditions
Group A
Subgroup
MSK 4900H/E
Min.
Typ.
Max.
Min.
MSK 4900
Typ.
Max.
NOTES:
1
2
3
4
5
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
Subgroups 5 and 6 testing available upon request.
Subgroup 1, 4 T
A
= T
C
= +25°C
2, 5 T
A
= T
C
= +125°C
3, 6 T
A
= T
C
= -55°C
Continuous operation at or above absolute maximum ratings may adversly effect the device
performance and/or life cycle.
6
2
PRELIMINARY
Rev. - 1/07
TBD
-40°C to +85°C
-55°C to +125°C
+150°C
600V
5.5V
18V
TBD
8A
T
ST
Storage Temperature Range
T
LD
Lead Temperature Range
(10 Seconds)
T
C
Case Operating Temperature
MSK4900
MSK4900H/E
T
J
Junction Temperature
-65°C to +150°C
+300°C
Units
APPLICATION NOTES
MSK 4900 PIN DESCRIPTIONS
VCC -
is the bias supply voltage for supplying the input logic
and the power supply for the isolated output. This pin should
be bypassed to GND with a 4.7µF tantalum capacitor and a
0.1µF ceramic capacitor as close this pin and GND as pos-
sible.
X OFF -
is the gate drive output pin for turning the gate off.
This pin will sink TBD current. A separate gate resistor shall
be selected to tailor the turn-off characteristics. This pin will
turn off to -5V.
GND -
is the Vcc supply return for the input logic and the
internal isolated supply. This GND is completely isolated from
the output section. No output returns should connect to this
GND in order to preserve isolation. All Vcc bias supply by-
pass connections should be made as close to this pin as pos-
sible. An input ground plane is the most preferred layout for
assuring good, low impedance ground, shielding of inputs
from noise, etc.
DE-SAT SENSE X -
is the input connection for sensing de-
saturation. This pin shall be connected to the collector of the
IGBT. This pin is blanked during switching so that it will not
false trip.
X VDD -
is the pin for the floating gate supply voltage. TBD
capacitance shall be connected between this pin and X VSS
as close to the pin as possible. Nominally, this voltage will be
+15V with respect to the RETURN X pin and the emitter of
the IGBT.
HI -
is the input logic pin for commanding the high-side gate
drive to turn on. This logic input is TTL compatible. This in-
put is exclusive OR'd with LO to protect against simultaneous
turn on of both the high-side and low-side gate drive.
X VSS -
is the return pin for the floating gate supply voltage.
TBD capacitance shall be connected between this pin and X
VDD as close to the pins as possible. Nominally, this voltage
will be -5V with respect to the RETURN X pin and the emitter.
LO -
is the input logic pin for commanding the low-side gate
drive to turn on. This logic input is TTL compatible. This in-
put is exclusive OR'd with HI to protect against simultaneous
turn on of both the high-side and low-side gate drive.
X FAULT -
is an open collector output for indicating either a
de-saturation condition or an undervoltage condition for the
gate drive. This output will be cleared upon activation of
X FAULT CLEAR.
SS X -
is the soft shutdown pin for slowly turning the gate
off after a de-saturation condition. This pin is a separate gate
turn-off path and requires a separate gate resistor for this spe-
cial turn-off approach. The resistor should be sized to keep di/
dt from being too high after the de-sat condition.
IN
RETURN X -
is the pin for the emitter reference. This pin will
be at zero volts to +15V to -5V for the gate drive voltage.
X FAULT CLEAR -
is a logic input pin for clearing a FAULT
condition. This input should not be activated until shutdown
of the affected gate is complete. Allow (TBD) µSec after FAULT
before activation of this pin.
X ON -
is the gate drive output pin for turning the gate on.
This pin will source TBD current. A separate gate resistor shall
be selected to tailor the turn-on characteristics. This pin will
turn on to +15V.
NOTE: X = HI or LO
3
PRELIMINARY
Rev. - 1/07
TYPICAL APPLICATION
TBD
4
PRELIMINARY
Rev. - 1/07
MSK4900 TEST CIRCUIT
TBD
5
PRELIMINARY
Rev. - 1/07
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参数对比
与MSK4900ED相近的元器件有:MSK4900EU、MSK4900ES。描述及对比如下:
型号 MSK4900ED MSK4900EU MSK4900ES
描述 600v isolated half bridge gate driver 600v isolated half bridge gate driver 600v isolated half bridge gate driver
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