型号
- 型号
- 关键词
| 型号 | MSM2128-12RS | MSM2128-20RS | MSM2128-1AS |
|---|---|---|---|
| 描述 | Standard SRAM, 2KX8, 120ns, NMOS, PDIP24, DIP-24 | Standard SRAM, 2KX8, 200ns, NMOS, PDIP24, DIP-24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 |
| Objectid | 1167350587 | 1167350591 | 1167350590 |
| 包装说明 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 120 ns | 200 ns | 200 ns |
| I/O 类型 | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T24 | R-PDIP-T24 | R-XDIP-T24 |
| JESD-609代码 | e0 | e0 | e0 |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 |
| 端子数量 | 24 | 24 | 24 |
| 字数 | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C |
| 组织 | 2KX8 | 2KX8 | 2KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC |
| 封装代码 | DIP | DIP | DIP |
| 封装等效代码 | DIP24,.6 | DIP24,.6 | DIP24,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.12 mA | 0.1 mA | 0.145 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO |
| 技术 | NMOS | NMOS | MOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 功能数量 | 1 | 1 | - |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | - |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | - |
