E2G0015-17-41
¡ Semiconductor
MSM511666C/CL
¡ Semiconductor
This version: Jan. 1998
MSM511666C/CL
Previous version: May 1997
65,536-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE)
DESCRIPTION
The MSM511666C/CL is a 65,536-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM511666C/CL achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM511666C/CL is available in a 40-pin plastic SOJ or 44/40-pin plastic
TSOP. The MSM511666CL (the low-power version) is specially designed for lower-power applications.
FEATURES
• 65,536-word
¥
16-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 256 cycles/4 ms, 256 cycles/32 ms (L-version)
• Byte write and fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM511666C/CL-xxJS)
44/40-pin 400 mil plastic TSOP
(TSOPII44/40-P-400-0.80-K) (Product : MSM511666C/CL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM511666C/CL-60
MSM511666C/CL-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
60 ns 30 ns 20 ns 20 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
110 ns
120 ns
550 mW
495 mW
5.5 mW/
1.1 mW (L-version)
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¡ Semiconductor
MSM511666C/CL
PIN CONFIGURATION (TOP VIEW)
V
CC
1
40 V
SS
DQ1 2
DQ2 3
DQ3 4
DQ4 5
DQ5 6
DQ6 7
DQ7 8
DQ8 9
39 DQ16
38 DQ15
37 DQ14
36 DQ13
35 DQ12
34 DQ11
33 DQ10
32 DQ9
31 NC
V
CC
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
NC
1
2
3
4
5
6
7
8
9
10
NC 10
V
CC
11
30 V
SS
28
OE
UWE
12
LWE
13
RAS
14
A0 15
A1 16
A2 17
A3 18
A4 19
V
CC
20
40-Pin Plastic SOJ
29
CAS
27 NC
26 NC
25 NC
24 A7
23 A6
22 A5
21 V
SS
44/40-Pin Plastic TSOP
(K Type)
V
CC
UWE
LWE
RAS
A0
A1
A2
A3
A4
V
CC
13
14
15
16
17
18
19
20
21
22
Pin Name
A0 - A7
RAS
CAS
DQ1 - DQ16
OE
LWE
UWE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Lower Byte Write Enable
Upper Byte Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
44
43
42
41
40
39
38
37
36
35
V
SS
DQ16
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
NC
32
31
30
29
28
27
26
25
24
23
V
SS
CAS
OE
NC
NC
NC
A7
A6
A5
V
SS
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/16
¡ Semiconductor
MSM511666C/CL
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
8
Column
Address
Buffers
Internal
Address
Counter
8
Column
Decoders
Write
Clock
Generator
UWE
LWE
OE
16
Output
Buffers
Input
Buffers
16
16
A0 - A7
Refresh
Control Clock
Sense
Amplifiers
16
I/O
Selector
16
16
16
DQ1 - DQ16
8
Row
Address
Buffers
8
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
CAS
*
H
L
L
L
L
L
LWE
*
*
H
L
H
L
H
UWE
*
*
H
H
L
L
H
OE
*
*
L
H
H
H
H
High-Z
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ1 - DQ8
DQ9 - DQ16
High-Z
High-Z
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
Word Read
Lower Byte Write
Upper Byte Write
Word Write
—
*: "H" or "L"
3/16
¡ Semiconductor
MSM511666C/CL
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
*
T
opr
T
stg
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A7)
Input Capacitance
(RAS,
CAS, UWE, LWE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
7
7
7
Unit
pF
pF
pF
4/16
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Condition
MSM511666
C/CL-60
Min.
V
OH
I
OH
= –2.5 mA
V
OL
I
OL
= 2.1 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
Average Power
Supply Current
(Battery Backup)
I
CC6
I
CC1
I
LO
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
I
CC2
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
t
RC
= 125
ms,
I
CC10
CAS
before
RAS,
t
RAS
£
1
ms
—
300
—
—
95
—
—
100
—
—
5
—
—
100
—
–10
10
–10
–10
10
–10
2.4
0
Max.
V
CC
0.4
MSM511666C/CL
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
MSM511666
C/CL-70
Min.
2.4
0
Max.
V
CC
0.4
10
V
V
mA
Unit Note
Symbol
10
mA
—
—
—
—
100
2
1
200
—
—
—
—
90
2
1
200
90
mA 1, 2
mA
mA
1
1, 5
mA 1, 2
5
mA
1
90
mA 1, 2
85
mA 1, 3
300
mA
1, 4,
5
Notes : 1.
2.
3.
4.
5.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while
RAS
= V
IL
.
The address can be changed once or less while
CAS
= V
IH
.
V
CC
– 0.2 V
£
V
IH
£
6.5 V, –1.0 V
£
V
IL
£
0.2 V.
L-version.
5/16
