¡ Semiconductor
MSM5117405B
¡ Semiconductor
MSM5117405B
E2G0039-17-41
4,194,304-Word
¥
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM5117405B is a 4,194,304-word
¥
4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5117405B is available in a 26/24-pin plastic SOJ or 26/24-pin plastic
TSOP.
FEATURES
• 4,194,304-word
¥
4-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 2048 cycles/32 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
26/24-pin 300 mil plastic SOJ (SOJ26/24-P-300-1.27) (Product : MSM5117405B-xxSJ)
26/24-pin 300 mil plastic TSOP (TSOPII26/24-P-300-1.27-K) (Product : MSM5117405B-xxTS-K)
(TSOPII26/24-P-300-1.27-L) (Product : MSM5117405B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5117405B-50
MSM5117405B-60
MSM5117405B-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
660 mW
605 mW
550 mW
5.5 mW
231
MSM5117405B
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
WE
4
RAS
5
NC 6
A10 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
26 V
SS
25 DQ4
24 DQ3
23
CAS
22
OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
V
CC
1
DQ1 2
DQ2 3
WE
4
RAS
5
NC 6
A10 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
,
26 V
SS
25 DQ4
23
CAS
22
OE
24 DQ3
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 V
SS
Function
Address Input
Row Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
¡ Semiconductor
V
SS
26
1 V
CC
2 DQ1
3 DQ2
4
WE
5
RAS
6 NC
8 A10
9 A0
10 A1
11 A2
12 A3
13 V
CC
DQ4 25
CAS
23
OE
22
A9 21
A8 19
A7 18
A6 17
A5 16
A4 15
V
SS
14
DQ3 24
26/24-Pin Plastic SOJ
26/24-Pin Plastic TSOP
(K Type)
26/24-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A10
RAS
CAS
DQ1 - DQ4
OE
WE
V
CC
V
SS
NC
Column Address Strobe
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
232
¡ Semiconductor
MSM5117405B
BLOCK DIAGRAM
Timing
Generator
Timing
Generator
RAS
CAS
11
Column
Address
Buffers
11
Column
Decoders
Write
Clock
Generator
WE
OE
4
A0 - A10
Internal
Address
Counter
Output
Buffers
4
4
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
4
4
DQ1 - DQ4
Input
Buffers
4
11
Row
Address
Buffers
11
Row
De-
coders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
233
MSM5117405B
¡ Semiconductor
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–0.5
*2
Typ.
5.0
0
—
—
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A10)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
234
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Condition
MSM5117405B
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Symbol
MSM5117405 MSM5117405 MSM5117405
B-50
B-60
B-70
Unit Note
Min.
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
Min.
2.4
0
–10
Max.
V
CC
0.4
10
V
V
mA
2.4
0
–10
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS, CAS
≥
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
HPC
= Min.
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
—
—
—
120
2
1
—
—
—
110
2
1
—
—
—
100
2
mA
1, 2
I
CC2
mA
1
1
—
120
—
110
—
100
mA
1, 2
—
5
—
5
—
5
mA
1
—
120
—
110
—
100
mA
1, 2
—
110
—
100
—
90
mA
1, 3
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
235
DSP 与 ARM 处理器