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MSM5117405F-70SJ

描述：
EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
分类：
存储    存储   
文件大小：
259KB，共18页
制造商：
LAPIS Semiconductor Co Ltd
概述
EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
零件包装代码
SOJ
包装说明
SOJ, SOJ24/26,.34
针数
24
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J24
JESD-609代码
e0
长度
17.15 mm
内存密度
16777216 bit
内存集成电路类型
EDO DRAM
内存宽度
4
功能数量
1
端口数量
1
端子数量
24
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4MX4
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ24/26,.34
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
电源
5 V
认证状态
Not Qualified
刷新周期
2048
座面最大高度
3.55 mm
自我刷新
NO
最大待机电流
0.001 A
最大压摆率
0.08 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
宽度
7.62 mm
文档预览
Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDD5117405F-02
1
Semiconductor
MSM5117405F
DESCRIPTION
This version: Nov. 2000
Previous version : Aug. 2000
4,194,304-Word
×
4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM5117405F is a 4,194,304-word
×
4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117405F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5117405F is available in a 26/24-pin plastic SOJ or 26/24-pin plastic TSOP.
FEATURES
∙
4,194,304-word
×
4-bit configuration
∙
Single 5V power supply,
±10%
tolerance
∙
Input : TTL compatible, low input capacitance
∙
Output : TTL compatible, 3-state
∙
Refresh : 2048 cycles/32ms
∙
Fast page mode with EDO, read modify write capability
∙
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
∙
Packages
26/24-pin 300mil plastic SOJ
(
SOJ26/24-P-300-1.27
)
(Product : MSM5117405F-xxSJ)
26/24-pin 300mil plastic TSOP
(
TSOPII26/24-P-300-0.80-K
)
(Product : MSM5117405F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
T
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
550mW
495mW
440mW
Standby
(Max.)
5.5mW
MSM5117405F
1/17
FEDD5117405F-02
1
Semiconductor
MSM5117405F
PIN CONFIGURATION (TOP VIEW)
V
CC
DQ1
DQ2
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
V
SS
DQ4
DQ3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
DQ1
DQ2
WE
RAS
NC
1
2
3
4
5
6
26
25
24
23
22
21
19
18
17
16
15
14
V
SS
DQ4
DQ3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
A10 8
A0 9
A1 10
A2 11
A3 12
V
CC
13
26/24-Pin Plastic
SOJ
26/24-Pin Plastic TSOP
(K Type)
Pin Name
A0–A10
RAS
CAS
DQ1–DQ4
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/17
FEDD5117405F-02
1
Semiconductor
MSM5117405F
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
11
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
11
Column Decoders
Write
Clock
Generator
WE
OE
4
Output
Buffers
4
4
4
Input
Buffers
4
A0
−
A10
Refresh
Control Clock
Sense Amplifiers
4
I/O
Selector
4
DQ1
−
DQ
4
11
11
Row
Deco-
ders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
V
SS
3/17
FEDD5117405F-02
1
Semiconductor
MSM5117405F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+0.5
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
−
0.5
*2
Typ.
5.0
0
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+ 1.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
1.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 5V
±
10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A10)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/17
查看更多>
参数对比
与MSM5117405F-70SJ相近的元器件有：MSM5117405F-50SJ、MSM5117405F-70TS-K、MSM5117405F-60SJ、MSM5117405F-50TS-K、MSM5117405F-60TS-K。描述及对比如下：
型号 MSM5117405F-70SJ MSM5117405F-50SJ MSM5117405F-70TS-K MSM5117405F-60SJ MSM5117405F-50TS-K MSM5117405F-60TS-K
描述 EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, SOJ-26/24 EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24 EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
厂商名称 LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd LAPIS Semiconductor Co Ltd
零件包装代码 SOJ SOJ TSOP2 SOJ TSOP2 TSOP2
包装说明 SOJ, SOJ24/26,.34 SOJ, SOJ24/26,.34 TSOP2, TSOP24/26,.36 SOJ, SOJ24/26,.34 TSOP2, TSOP24/26,.36 TSOP2, TSOP24/26,.36
针数 24 24 26 24 26 26
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 70 ns 50 ns 70 ns 60 ns 50 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-J24 R-PDSO-J24 R-PDSO-G24 R-PDSO-J24 R-PDSO-G24 R-PDSO-G24
长度 17.15 mm 17.15 mm 17.14 mm 17.15 mm 17.14 mm 17.14 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 4 4 4 4 4 4
功能数量 1 1 1 1 1 1
端口数量 1 1 1 1 1 1
端子数量 24 24 24 24 24 24
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4MX4 4MX4 4MX4 4MX4 4MX4 4MX4
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ TSOP2 SOJ TSOP2 TSOP2
封装等效代码 SOJ24/26,.34 SOJ24/26,.34 TSOP24/26,.36 SOJ24/26,.34 TSOP24/26,.36 TSOP24/26,.36
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
电源 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 2048 2048 2048 2048 2048 2048
座面最大高度 3.55 mm 3.55 mm 1.2 mm 3.55 mm 1.2 mm 1.2 mm
自我刷新 NO NO NO NO NO NO
最大待机电流 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
最大压摆率 0.08 mA 0.1 mA 0.08 mA 0.09 mA 0.1 mA 0.09 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND GULL WING J BEND GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
宽度 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
是否Rohs认证 不符合 不符合 不符合 - 不符合 不符合
JESD-609代码 e0 e0 e0 - e0 e0
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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