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MSM5117800D-60TS-L

Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, REVERSE, PLASTIC, TSOP2-28

器件类别:存储    存储   

厂商名称:OKI

厂商官网:http://www.oki.com

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器件参数
参数名称
属性值
厂商名称
OKI
零件包装代码
TSOP
包装说明
TSOP2-R,
针数
28
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码
R-PDSO-G28
长度
18.41 mm
内存密度
16777216 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
28
字数
2097152 words
字数代码
2000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
2MX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2-R
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
认证状态
Not Qualified
座面最大高度
1.2 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
10.16 mm
文档预览
Semiconductor
MSM5117800D
2,097,152-Word
´
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
This version:Apr.1999
DESCRIPTION
The MSM5117800D is a 2,097,152-word
´
8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117800D achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM5117800D is available in a 28-pin plastic SOJ, 28-pin plastic TSOP.
FEATURES
·
·
·
·
·
·
2,097,152-word
´
8-bit configuration
Single 5V power supply,
±10%
tolerance
Input
Output
Refresh
: TTL compatible, low input capacitance
: TTL compatible, 3-state
: 2048 cycles/32 ms
Fast page mode, read modify write capability
·
·
·
CAS before RAS refresh, hidden refresh, RAS-only refresh capability
Multi-bit test mode capability
Package options:
28-pin 400mil plastic SOJ
28-pin 400mil plastic TSOP
(SOJ28-P-400-1.27)
(TSOPII28-P-400-1.27-K)
(TSOPII28-P-400-1.27-L)
(Product : MSM5117800D-xxJS)
(Product : MSM5117800D-xxTS-K)
(Product : MSM5117800D-xxTS-L)
xx : indicates speed rank.
PRODUCT FAMILY
Family
MSM5117800D-50
MSM5117800D-60
MSM5117800D-70
Access Time (Max.)
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
90ns
110ns
130ns
Power Dissipation
Operating (Max.)
550mW
495mW
440mW
5.5mW
Standby (Max.)
1/14
MSM5117800D
PIN CONFIGRATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
RAS 7
NC 8
A10R 9
A0 10
A1 11
A2 12
A3 13
V
CC
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ8
DQ7
DQ6
DQ5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
RAS 7
NC 8
A10R 9
A0 10
A1 11
A2 12
A3 13
V
CC
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ8
DQ7
DQ6
DQ5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
SS
DQ8
DQ7
DQ6
DQ5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
V
CC
DQ1
DQ2
DQ3
DQ4
WE
RAS
NC
A10R
A0
A1
A2
A3
V
CC
28-Pin Plastic SOJ
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic TSOP
(L Type)
Pin Name
A0–A9, A10R
RAS
CAS
DQ1–DQ8
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
No Connection
2/14
MSM5117800D
BLOCK DIAGRAM
RAS
CAS
Timing
Generator
WE
I/O
Controller
OE
8
Output
Buffers
8
DQ1 – DQ
8
10
Column
Address
Buffers
Internal
Address
Counter
10
Column Decoders
8
I/O
Selector
Input
Buffers
8
A0 – A9
Refresh
Control Clock
Sense Amplifiers
8
8
10
A10R
1
Row
Address
Buffers
11
Row
Deco-
ders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
3/14
MSM5117800D
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage
on
Any Pin Relative to V
SS
Voltage V
CC
supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
*: Ta = 25°C
Rating
-0.5
to V
CC
+
0.5
0.5 to 7.0
50
1
0 to 70
-55
to 150
Unit
V
V
mA
W
°C
°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min.
4.5
0
2.4
-0.5
*2
Typ.
5.0
0
¾
¾
Max.
5.5
0
Unit
V
V
V
V
V
CC
V
SS
V
IH
V
IL
V
CC
+
0.5
*1
0.8
Notes:
*1. The input voltage is V
CC
+
2.0V when the pulse width is less than 20ns (the pulse width is with
respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
-
2.0V when the pulse width is less than 20ns (the pulse width respect to
the point at which V
SS
is applied).
Capacitance
(V
CC
= 5V ± 10%, Ta = 25°C, f=1MHz)
Parameter
Input Capacitance (A0 – A9, A10R)
Input Capacitance
(RAS, CAS, WE, OE)
Output Capacitance (DQ1 – DQ8)
Symbol
Typ.
¾
¾
¾
Max.
5
7
7
Unit
pF
pF
pF
C
IN1
C
IN2
C
I/O
4/14
MSM5117800D
DC Characteristics
(V
CC
= 5V ± 10%, Ta = 0°C to 70°C)
MSM5117800 MSM5117800 MSM5117800
D-50
D-60
D-70
Unit
Min.
Output High Voltage
Output Low Voltage
Input Leakage
Current
Output Leakage
Current
Average Power
Supply Current
(Operating)
Power Supply
Current
(Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current
(Standby)
Average Power
Supply Current
(CAS before RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
V
OH
V
OL
I
OH
=
-5.0mA
I
OL
= 4.2mA
0V
£
V
I
£
6.5V ;
I
LI
All other pins not
under test = 0V
DQ disable
0V
£
V
O
£
V
CC
RAS, CAS cycling,
t
RC
= Min.
RAS, CAS = V
IH
I
CC2
RAS, CAS
³
V
CC
– 0.2V
RAS cycling,
I
CC3
CAS = V
IH
,
t
RC
= Min.
RAS = V
IH
,
I
CC5
CAS = V
IL
,
DQ = enable
RAS = cycling,
CAS before RAS
RAS = V
IL
,
I
CC7
CAS cycling,
t
PC
= Min.
¾
80
¾
70
¾
60
mA
1,3
¾
5
¾
5
¾
5
mA
1
¾
100
¾
90
¾
80
mA
1,2
-10
10
-10
10
-10
10
mA
2.4
0
Max
V
CC
0.4
Min.
2.4
0
Max
V
CC
0.4
Min.
2.4
0
Max
V
CC
0.4
V
V
Parameter
Symbol
Condition
Note
I
LO
-10
10
-10
10
-10
10
mA
I
CC1
¾
¾
¾
100
¾
¾
¾
90
¾
¾
¾
80
mA
1,2
2
1
2
1
2
1
mA
1
I
CC6
¾
100
¾
90
¾
80
mA
1,2
Notes: 1.
2.
3.
I
CC
Max. is specified as I
CC
for output open condition.
The address can be changed once or less while RAS = V
IL
.
The address can be changed once or less while CAS = V
IH
.
5/14
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参数对比
与MSM5117800D-60TS-L相近的元器件有:MSM5117800D-70TS-L、MSM5117800D-60TS-K、MSM5117800D-50JS、MSM5117800D-70JS、MSM5117800D-50TS-K、MSM5117800D-50TS-L、MSM5117800D-70TS-K。描述及对比如下:
型号 MSM5117800D-60TS-L MSM5117800D-70TS-L MSM5117800D-60TS-K MSM5117800D-50JS MSM5117800D-70JS MSM5117800D-50TS-K MSM5117800D-50TS-L MSM5117800D-70TS-K
描述 Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, REVERSE, PLASTIC, TSOP2-28 Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, REVERSE, PLASTIC, TSOP2-28 Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-28 Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-28 Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28 Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, REVERSE, PLASTIC, TSOP2-28 Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-28
厂商名称 OKI OKI OKI OKI OKI OKI OKI OKI
零件包装代码 TSOP TSOP TSOP SOJ SOJ TSOP TSOP TSOP
包装说明 TSOP2-R, TSOP2-R, TSOP2, SOJ, SOJ, TSOP2, TSOP2-R, TSOP2,
针数 28 28 28 28 28 28 28 28
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 60 ns 70 ns 60 ns 50 ns 70 ns 50 ns 50 ns 70 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28 R-PDSO-J28 R-PDSO-J28 R-PDSO-G28 R-PDSO-G28 R-PDSO-G28
长度 18.41 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 28 28 28 28 28 28 28 28
字数 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8 2MX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2-R TSOP2-R TSOP2 SOJ SOJ TSOP2 TSOP2-R TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 3.75 mm 3.75 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING J BEND J BEND GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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