Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
E2G0113-18-42
¡ Semiconductor
MSM5117805C
¡ Semiconductor
This version: Apr. 1998
MSM5117805C
Pr
el
im
in
ar
y
2,097,152-Word
¥
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
DESCRIPTION
The MSM5117805C is a 2,097,152-word
¥
8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5117805C achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5117805C is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
• 2,097,152-word
¥
8-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 2048 cycles/32 ms
• Fast page mode with EDO, read modify write capability
•
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Multi-bit test mode capability
• Package options:
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM5117805C-xxJS)
28-pin 400 mil plastic TSOP
(TSOPII28-P-400-1.27-K) (Product : MSM5117805C-xxTS-K)
(TSOPII28-P-400-1.27-L) (Product : MSM5117805C-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5117805C-50
MSM5117805C-60
MSM5117805C-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
660 mW
605 mW
550 mW
5.5 mW
1/17
¡ Semiconductor
MSM5117805C
PIN CONFIGURATION (TOP VIEW)
V
CC
1
28 V
SS
V
CC
1
28 V
SS
V
SS
28
1 V
CC
DQ1 2
27 DQ8
DQ1 2
DQ2 3
DQ3 4
DQ4 5
27 DQ8
DQ8 27
DQ7 26
DQ6 25
DQ5 24
CAS
23
OE
22
A9 21
A8 20
A7 19
A6 18
A5 17
A4 16
V
SS
15
2 DQ1
DQ2 3
DQ3 4
DQ4 5
WE
6
NC 8
26 DQ7
25 DQ6
24 DQ5
23
CAS
22
OE
26 DQ7
25 DQ6
24 DQ5
23
CAS
22
OE
21 A9
3 DQ2
4 DQ3
5 DQ4
WE
6
NC 8
6
WE
8 NC
RAS
7
RAS
7
7
RAS
9 A10R
21 A9
A10R 9
20 A8
19 A7
18 A6
17 A5
16 A4
A10R 9
20 A8
19 A7
18 A6
17 A5
16 A4
A0 10
A1 11
A2 12
A3 13
A0 10
A1 11
A2 12
A3 13
10 A0
11 A1
12 A2
13 A3
V
CC
14
28-Pin Plastic SOJ
15 V
SS
V
CC
14
15 V
SS
14 V
CC
28-Pin Plastic TSOP
(K Type)
28-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A9, A10R
RAS
CAS
DQ1 - DQ8
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/17
¡ Semiconductor
MSM5117805C
BLOCK DIAGRAM
WE
RAS
CAS
10
OE
I/O
Controller
Output
Buffers
8
Timing
Generator
8
DQ1 - DQ8
Column
Address
Buffers
Internal
Address
Counter
10
10
Column Decoders
8
Input
Buffers
8
A0 - A9
Refresh
Control Clock
Sense Amplifiers
8
I/O
Selector
8
A10R
1
Row
Row
Address
11
Deco-
Buffers
ders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
3/17
¡ Semiconductor
MSM5117805C
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–0.5
*2
Typ.
5.0
0
—
—
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A9, A10R)
Input Capacitance (RAS,
CAS, WE, OE)
Output Capacitance (DQ1 - DQ8)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/17