Dear customers,
About the change in the name such as "Oki Electric Industry Co. Ltd." and
"OKI" in documents to OKI Semiconductor Co., Ltd.
The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI
Semiconductor Co., Ltd. on October 1, 2008.
Therefore, please accept that although
the terms and marks of "Oki Electric Industry Co., Ltd.", “Oki Electric”, and "OKI"
remain in the documents, they all have been changed to "OKI Semiconductor Co., Ltd.".
It is a change of the company name, the company trademark, and the logo, etc. , and
NOT a content change in documents.
October 1, 2008
OKI Semiconductor Co., Ltd.
550-1 Higashiasakawa-cho, Hachioji-shi, Tokyo 193-8550, Japan
http://www.okisemi.com/en/
FEDD5117805F-01
1
Semiconductor
MSM5117805F
DESCRIPTION
This version: November. 2000
Previous version :
2,097,152-Word
×
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
The MSM5117805F is a 2,097,152-word
×
8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM5117805F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MSM5117805F is available in a 28-pin plastic SOJ or 28-pin plastic TSOP.
FEATURES
∙
2,097,152-word
×
8-bit configuration
∙
Single 5V power supply,
±10%
tolerance
∙
Input : TTL compatible, low input capacitance
∙
Output : TTL compatible, 3-state
∙
Refresh : 2048 cycles/32ms
∙
Fast page mode with EDO, read modify write capability
∙
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
∙
Packages
(
SOJ28-P-400-1.27
)
28-pin 400mil plastic SOJ
(Product : MSM5117805F-xxJS)
(
TSOPII28-P-400-1.27-K
)
28-pin 400mil plastic TSOP
(Product : MSM5117805F-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Access Time (Max.)
Family
t
RAC
50ns
60ns
70ns
t
AA
25ns
30ns
35ns
t
CAC
13ns
15ns
20ns
t
OEA
13ns
15ns
20ns
Cycle Time
(Min.)
84ns
104ns
124ns
Power Dissipation
Operating
(Max.)
550mW
495mW
440mW
Standby
(Max.)
5.5mW
MSM5117805F
1/16
FEDD5117805F-01
1
Semiconductor
MSM5117805F
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
RAS 7
NC 8
A10R 9
A0 10
A1 11
A2 12
A3 13
V
CC
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ8
DQ7
DQ6
DQ5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
WE 6
RAS 7
NC 8
A10R 9
A0 10
A1 11
A2 12
A3 13
V
CC
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
SS
DQ8
DQ7
DQ6
DQ5
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
28-Pin Plastic SOJ
28-Pin Plastic TSOP
(K Type)
Pin Name
A0–A9, A10R
RAS
CAS
DQ1–DQ8
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5V)
Ground (0V)
No Connection
Note : The same power supply voltage must be provided to every V
CC
pin, and the same GND voltage level must
be provided to every V
SS
pin.
2/16
FEDD5117805F-01
1
Semiconductor
MSM5117805F
BLOCK DIAGRAM
Timing
Generator
RAS
CAS
WE
I/O
Controller
OE
8
Output
Buffers
8
DQ1 – DQ
8
10
Column
Address
Buffers
Internal
Address
Counter
10
Column Decoders
8
I/O
Selector
Input
Buffers
8
A0 – A9
Refresh
Control Clock
Sense Amplifiers
8
8
10
A10R
1
Row
Address
Buffers
11
Row
Deco-
ders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
3/16
FEDD5117805F-01
1
Semiconductor
MSM5117805F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on Any Pin Relative V
SS
Voltage V
CC
Supply relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D*
T
opr
T
stg
Value
–0.5 to V
CC
+0.5
–0.5 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
V
MA
W
°C
°C
*: Ta = 25°C
RECOMMENDED OPERATING CONDITION
(Ta = 0 to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
−
0.5
*2
Typ.
5.0
0
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes: *1. The input voltage is V
CC
+
2.0V when the pulse width is less than 20ns (the pulse width is with respect
to the point at which V
CC
is applied).
*2. The input voltage is V
SS
−
2.0V when the pulse width is less than 20ns (the pulse width respect to the
point at which V
SS
is applied).
PIN CAPACITANCE
(Vcc = 5V
±
10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 – A9, A10R)
Input Capacitance
(RAS,
CAS, WE, OE)
Output Capacitance (DQ1 – DQ8)
Symbol
C
IN1
C
IN2
C
I/O
Min.
—
—
—
Max.
5
7
7
Unit
pF
pF
pF
4/16