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MSM5118160B-70JS

Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42

器件类别:存储    存储   

厂商名称:OKI

厂商官网:http://www.oki.com

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器件参数
参数名称
属性值
厂商名称
OKI
零件包装代码
SOJ
包装说明
SOJ,
针数
42
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE
最长访问时间
70 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码
R-PDSO-J42
长度
27.3 mm
内存密度
16777216 bit
内存集成电路类型
FAST PAGE DRAM
内存宽度
16
功能数量
1
端口数量
1
端子数量
42
字数
1048576 words
字数代码
1000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX16
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
刷新周期
1024
座面最大高度
3.75 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
J BEND
端子节距
1.27 mm
端子位置
DUAL
宽度
10.16 mm
文档预览
E2G0051-17-41
¡ Semiconductor
MSM5118160B
¡ Semiconductor
This version: Jan. 1998
MSM5118160B
Previous version: May 1997
1,048,576-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM5118160B is a 1,048,576-word
¥
16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM5118160B achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer
metal CMOS process. The MSM5118160B is available in a 42-pin plastic SOJ or 50/44-pin plastic
TSOP.
FEATURES
• 1,048,576-word
¥
16-bit configuration
• Single 5 V power supply,
±10%
tolerance
• Input
: TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms
• Fast page mode, read modify write capability
CAS
before
RAS
refresh, hidden refresh,
RAS-only
refresh capability
• Package options:
42-pin 400 mil plastic SOJ
(SOJ42-P-400-1.27)
(Product : MSM5118160B-xxJS)
50/44-pin 400 mil plastic TSOP (TSOPII50/44-P-400-0.80-K) (Product : MSM5118160B-xxTS-K)
(TSOPII50/44-P-400-0.80-L) (Product : MSM5118160B-xxTS-L)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5118160B-50
MSM5118160B-60
MSM5118160B-70
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
50 ns 25 ns 13 ns 13 ns
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
Cycle Time
Power Dissipation
(Min.)
Operating (Max.) Standby (Max.)
90 ns
110 ns
130 ns
990 mW
880 mW
770 mW
5.5 mW
1/16
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
V
CC
1
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
DQ8 10
NC 11
NC 12
WE
13
RAS
14
NC 15
NC 16
A0 17
A1 18
A2 19
A3 20
V
CC
21
42 V
SS
V
CC
1
 
MSM5118160B
50 V
SS
V
SS
50
1 V
CC
41 DQ16
40 DQ15
39 DQ14
38 DQ13
37 V
SS
36 DQ12
35 DQ11
34 DQ10
33 DQ9
32 NC
DQ1 2
DQ2 3
DQ3 4
DQ4 5
V
CC
6
DQ5 7
DQ6 8
DQ7 9
49 DQ16 DQ16 49
48 DQ15 DQ15 48
47 DQ14 DQ14 47
46 DQ13 DQ13 46
45 V
SS
V
SS
45
44 DQ12 DQ12 44
43 DQ11 DQ11 43
42 DQ10 DQ10 42
41 DQ9
40 NC
DQ9 41
NC 40
2 DQ1
3 DQ2
4 DQ3
5 DQ4
6 V
CC
7 DQ5
8 DQ6
9 DQ7
DQ8 10
NC 11
10 DQ8
11 NC
31
LCAS
29
OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 V
SS
NC 15
NC 16
WE
17
RAS
18
NC 19
NC 20
A0 21
A1 22
A2 23
A3 24
V
CC
25
36 NC
35
LCAS
33
OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 V
SS
NC 36
LCAS
35
OE
33
A9 32
A8 31
A7 30
A6 29
A5 28
A4 27
V
SS
26
15 NC
16 NC
17
WE
18
RAS
19 NC
20 NC
21 A0
22 A1
23 A2
24 A3
25 V
CC
30
UCAS
34
UCAS UCAS
34
42-Pin Plastic SOJ
50/44-Pin Plastic TSOP
(K Type)
50/44-Pin Plastic TSOP
(L Type)
Pin Name
A0 - A9
RAS
LCAS
UCAS
DQ1 - DQ16
OE
WE
V
CC
V
SS
NC
Function
Address Input
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5 V)
Ground (0 V)
No Connection
Note :
The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/16
¡ Semiconductor
MSM5118160B
BLOCK DIAGRAM
WE
RAS
LCAS
UCAS
Column
Address
Buffers
Internal
Address
Counter
Row
Address
10
Buffers
Timing
Generator
I/O
Controller
I/O
Controller
10
10
8
OE
Output
Buffers
8
DQ1 - DQ8
8
Column Decoders
Input
Buffers
8
A0
-
A9
Refresh
Control Clock
Sense Amplifiers
16
I/O
Selector
16
8
10
Input
Buffers
8
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
DQ9 - DQ16
Output
Buffers
8
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ1 - DQ8
DQ9 - DQ16
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
*: "H" or "L"
3/16
¡ Semiconductor
MSM5118160B
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
IN
, V
OUT
V
CC
I
OS
P
D
*
T
opr
T
stg
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 7
50
1
0 to 70
–55 to 150
Unit
V
V
mA
W
°C
°C
*: Ta = 25°C
Recommended Operating Conditions
(Ta = 0°C to 70°C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–0.5
*2
Typ.
5.0
0
Max.
5.5
0
V
CC
+ 0.5
*1
0.8
Unit
V
V
V
V
Notes : *1. The input voltage is V
CC
+ 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
CC
is applied).
*2. The input voltage is V
SS
– 2.0 V when the pulse width is less than 20 ns (the pulse width
is with respect to the point at which V
SS
is applied).
Capacitance
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A9)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ1 - DQ16)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
Max.
5
7
7
Unit
pF
pF
pF
4/16
¡ Semiconductor
DC Characteristics
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
MSM5118160B
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Condition
MSM5118160 MSM5118160 MSM5118160
B-50
B-60
B-70
Unit Note
Min.
V
OH
I
OH
= –5.0 mA
V
OL
I
OL
= 4.2 mA
0 V
£
V
I
£
6.5 V;
I
LI
All other pins not
under test = 0 V
DQ disable
0 V
£
V
O
£
5.5 V
RAS, CAS
cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS, CAS
V
CC
–0.2 V
RAS
cycling,
I
CC3
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
I
CC5
CAS
= V
IL
,
DQ = enable
I
CC6
RAS
cycling,
CAS
before
RAS
RAS
= V
IL
,
I
CC7
CAS
cycling,
t
PC
= Min.
170
150
130
mA
1, 3
180
160
140
mA
1, 2
5
5
5
mA
1
180
160
140
mA
1, 2
–10
10
–10
10
–10
10
mA
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
Min.
2.4
0
Max.
V
CC
0.4
V
V
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS-only Refresh)
Power Supply
Current (Standby)
Average Power
Supply Current
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
I
LO
–10
10
–10
10
–10
10
mA
I
CC1
180
2
1
160
2
1
140
2
mA
1, 2
I
CC2
mA
1
1
Notes : 1. I
CC
Max. is specified as I
CC
for output open condition.
2. The address can be changed once or less while
RAS
= V
IL
.
3. The address can be changed once or less while
CAS
= V
IH
.
5/16
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参数对比
与MSM5118160B-70JS相近的元器件有:MSM5118160B-50TS-L、MSM5118160B-70TS-K、MSM5118160B-70TS-L、MSM5118160B-60JS、MSM5118160B-50JS、MSM5118160B-50TS-K、MSM5118160B-60TS-K、MSM5118160B-60TS-L。描述及对比如下:
型号 MSM5118160B-70JS MSM5118160B-50TS-L MSM5118160B-70TS-K MSM5118160B-70TS-L MSM5118160B-60JS MSM5118160B-50JS MSM5118160B-50TS-K MSM5118160B-60TS-K MSM5118160B-60TS-L
描述 Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44 Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50/44
厂商名称 OKI OKI OKI OKI OKI OKI OKI OKI OKI
零件包装代码 SOJ TSOP2 TSOP2 TSOP2 SOJ SOJ TSOP2 TSOP2 TSOP2
包装说明 SOJ, TSOP2, TSOP2, TSOP2, SOJ, SOJ, TSOP2, TSOP2, TSOP2,
针数 42 50 50 50 42 42 50 50 50
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
最长访问时间 70 ns 50 ns 70 ns 70 ns 60 ns 50 ns 50 ns 60 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-PDSO-J42 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-J42 R-PDSO-J42 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
长度 27.3 mm 20.95 mm 20.95 mm 20.95 mm 27.3 mm 27.3 mm 20.95 mm 20.95 mm 20.95 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bi
内存集成电路类型 FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
内存宽度 16 16 16 16 16 16 16 16 16
功能数量 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1
端子数量 42 44 44 44 42 42 44 44 44
字数 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16 1MX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ TSOP2 TSOP2 TSOP2 SOJ SOJ TSOP2 TSOP2 TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 1024 1024 1024 1024 1024 1024 1024 1024 1024
座面最大高度 3.75 mm 1.2 mm 1.2 mm 1.2 mm 3.75 mm 3.75 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND GULL WING GULL WING GULL WING J BEND J BEND GULL WING GULL WING GULL WING
端子节距 1.27 mm 0.8 mm 0.8 mm 0.8 mm 1.27 mm 1.27 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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