E2L0012-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM514252A
262,144-Word
¥
4-Bit Multiport DRAM
This version: Jan. 1998
MSM514252A
Previous version: Dec. 1996
DESCRIPTION
The MSM514252A is an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit
dynamic RAM, and a 512-word by 4-bit static serial access memory, SAM port. The RAM port
and SAM port operate independently and asynchronously.
The MSM514252A supports three types of operations: random access to and from the RAM port,
high speed serial access to and from the SAM port and bidirectional transfer of data between any
selected row in the RAM port and the SAM port. The RAM port and the SAM port can be accessed
independently except when data is being transferred between them internally.
FEATURES
• Single power supply of 5 V
±10%
with a built-in V
BB
generator
• All inputs and outputs: TTL compatible
• Multiport organization
RAM port: 256K word
¥
4 bits
SAM port: 512 word
¥
4 bits
• RAM port
Fast page mode, Read-modify-write
CAS
before
RAS
refresh, Hidden refresh
RAS
only refresh, Standard write-per-bit
• SAM port
High speed serial
Read/Write capability
Fully static register
512 tap location
• RAM-SAM bidirectional, Read/Write/Pseudo write, Real time read transfer
• Package options:
28-pin 400 mil plastic ZIP
(ZIP28-P-400-1.27)
(Product : MSM514252A-xxZS)
28-pin 400 mil plastic SOJ
(SOJ28-P-400-1.27)
(Product : MSM514252A-xxJS)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514252A-70
MSM514252A-80
MSM514252A-10
Access Time
RAM
70 ns
80 ns
100 ns
SAM
25 ns
25 ns
25 ns
Cycle Time
RAM
140 ns
150 ns
180 ns
SAM
30 ns
30 ns
30 ns
Power Dissipation
Operating
120 mA
110 mA
100 mA
Standby
8 mA
8 mA
8 mA
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¡ Semiconductor
MSM514252A
PIN CONFIGURATION (TOP VIEW)
NC
W4/IO4
SIO3
V
SS
SIO1
1
3
5
7
9
2
4
6
8
W3/IO3
SE
SIO4
SC
10 SIO2
DT/OE
11
W2/IO2 13
NC 15
A8 17
A5 19
V
CC
21
A3 23
A1 25
NC 27
12 W1/IO1
14
WB/WE
16
RAS
18 A6
20 A4
22 A7
24 A2
26 A0
SC 1
28 V
SS
SIO1 2
27 SIO4
SIO2 3
26 SIO3
25
SE
DT/OE
4
W1/IO1 5
W2/IO2 6
WB/WE
7
NC 8
RAS
9
24 W4/IO4
23 W3/IO3
22 NC
20 NC
19 A0
18 A1
17 A2
16 A3
15 A7
21
CAS
A8 10
A6 11
A5 12
A4 13
V
CC
14
28-Pin Plastic SOJ
28
CAS
28-Pin Plastic ZIP
Pin Name
A0 - A8
RAS
CAS
DT/OE
WB/WE
W1/IO1 - W4/IO4
SC
SE
SIO1 - SIO4
V
CC
/V
SS
NC
Function
Address Input
Row Address Strobe
Column Address Strobe
Data Transfer/Output Enable
Write per Bit/Write Enable
Write Mask/Data IN, OUT
Serial Clock
Serial Enable
Serial Input/Output
Power Supply (5 V) /Ground (0 V)
No Connection
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¡ Semiconductor
MSM514252A
BLOCK DIAGRAM
W1/IO1
- W4/IO4
WB/WE
DT/OE
RAS
CAS
SC
SE
I/O Buffer
(RAM)
Timing Generator
I/O Buffer
(SAM)
Mask Register
Write/WPB Control
Column Decoder
Sense Amplifier
512
¥
512
¥
4
Cell Array
Column
Address
Buffer
Row
Address
Buffer
Refresh
Counter
A0 - A8
Serial
Address
Counter
V
CC
V
SS
Row Decoder
Selector
SAM
SIO1
- SIO4
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¡ Semiconductor
MSM514252A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Input Output Voltage
Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
l
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
(Note : 16)
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
IH
V
IL
Min.
4.5
2.4
–1.0
Typ.
5.0
—
—
(Ta = 0°C to 70°C) (Note : 17)
Max.
5.5
6.5
0.8
Unit
V
V
V
Capacitance
Parameter
Input Capacitance
Input / Output Capacitance
Symbol
C
I
C
I/O
Min.
—
—
(V
CC
= 5 V ±10%, f = 1 MHz, Ta = 25°C)
Max.
7
9
Unit
pF
pF
Note :
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter
Output "H" Level Voltage
Output "L" Level Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –2 mA
I
OL
= 2 mA
0
£
V
IN
£
V
CC
All other pins
not under test = 0 V
0
£
V
OUT
£
5.5 V
Output Disable
Min.
2.4
—
–10
Max.
—
0.4
10
mA
–10
10
Unit
V
Output Leakage Current
I
LO
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¡ Semiconductor
DC Characteristics 2
Item (RAM)
Operating Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
Standby Current
(RAS,
CAS
= V
IH
)
RAS
Only Refresh Current
(RAS Cycling,
CAS
= V
IH
, t
RC
= t
RC
min.)
Page Mode Current
(RAS = V
IL
,
CAS
Cycling, t
PC
= t
PC
min.)
CAS
before
RAS
Refresh Current
(RAS Cycling,
CAS
before
RAS,
t
RC
= t
RC
min.)
Data Transfer Current
(RAS,
CAS
Cycling, t
RC
= t
RC
min.)
SAM
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Standby
Active
Symbol
I
CC1
I
CC1A
I
CC2
I
CC2A
I
CC3
I
CC3A
I
CC4
I
CC4A
I
CC5
I
CC5A
I
CC6
I
CC6A
MSM514252A
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
-70
85
120
8
50
85
120
70
120
85
120
85
120
-80
75
110
8
45
75
110
65
110
75
110
75
110
-10
65
100
8
40
65
100
60
100
65
100
65
100
mA
Max. Max. Max.
Unit Note
1, 2
1, 2
3
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
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